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Preparation and thermophysical properties of AgGaTe2 crystals. Burger, A; Ndap, JO; Cui, Y; Roy, U; Morgan, S; Chattopadhyay, K; Ma, X; Faris, K; Thibaud, S; Miles, R; Mateen, H; Goldstein, JT; Rawn, CJ, JOURNAL OF CRYSTAL GROWTH 2001, 225, 505-511 View Abstract

The effect of pH and air superficial velocity on the foam fractionation of okra (Hibiscus esculentus). Butler, EE; Rajab, F; Prokop, A; Tanner, RD, JOURNAL OF SCIENTIFIC & INDUSTRIAL RESEARCH 2001, 60, 513-520 View Abstract

Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide. Chung, GY; Tin, CC; Williams, JR; McDonald, K; Chanana, RK; Weller, RA; Pantelides, ST; Feldman, LC; Holland, OW; Das, MK; Palmour, JW, IEEE ELECTRON DEVICE LETTERS 2001, 22, 176-178 View Abstract

Vibrational dynamics of bond-center hydrogen in crystalline silicon. Budde, M; Cheney, CP; Lupke, G; Tolk, NH; Feldman, LC, PHYSICAL REVIEW B 2001, 6319, 195203 View Abstract

Ion beam measurements of Sn/In ratios in indium tin oxide films prepared by pulsed-laser deposition. Ren, XT; Huang, MB; Amadon, S; Lanford, WA; Paliza, MAM; Feldman, LC, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 2001, 174, 187-193 View Abstract

Measurement of bubble size distribution in protein foam fractionation column using capillary probe with photoelectric sensors. Du, LP; Ding, YQ; Prokop, A; Tanner, RD, APPLIED BIOCHEMISTRY AND BIOTECHNOLOGY 2001, 91-3, 387-404 View Abstract

Effect of a natural contaminant on foam fractionation of bromelain. Ko, S; Cherry, J; Prokop, A; Tanner, RD, APPLIED BIOCHEMISTRY AND BIOTECHNOLOGY 2001, 91-3, 405-411 View Abstract

Influence of electrical contacts on charge collection profiles in CdZnTe studied by IBIC. Pastuovic, Z; Jaksic, M; James, RB; Chattopadhyay, K; Ma, X; Burger, A, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT 2001, 458, 254-261 View Abstract

Lead iodide film deposition and characterization. Fornaro, L; Saucedo, E; Mussio, L; Yerman, L; Ma, X; Burger, A, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT 2001, 458, 406-412 View Abstract

Absolute total cross sections for electron-stimulated desorption of hydrogen and deuterium from silicon(111) measured by second harmonic generation. Albert, MM; Tolk, NH, PHYSICAL REVIEW B 2001, 63, 035308 View Abstract

Size effect in self-trapped exciton photoluminescence from SiO2-based nanoscale materials. Glinka, YD; Lin, SH; Hwang, LP; Chen, YT; Tolk, NH, PHYSICAL REVIEW B 2001, 64, art. no. -085421 View Abstract

Heavy-ion-induced breakdown in ultra-thin gate oxides and high-k dielectrics. Massengill, LW; Choi, BK; Fleetwood, DM; Schrimpf, RD; Galloway, KF; Shaneyfelt, MR; Meisenheimer, TL; Dodd, PE; Schwank, JR; Lee, YM; Johnson, RS; Lucovsky, G, IEEE TRANSACTIONS ON NUCLEAR SCIENCE 2001, 48, 1904-1912 View Abstract

Spectroscopic scanning near-field optical microscopy with a free electron laser, CH2 bond imaging in diamond films. Cricenti, A; Generosi, R; Luce, M; Perfetti, P; Margaritondo, G; Talley, D; Sandhera, JS; Aggarwal, ID; Gilligan, JM; Tolk, NH, JOURNAL OF MICROSCOPY-OXFORD 2001, 202, 446-450 View Abstract

Proton-induced defect generation at the Si-SiO2 interface. Rashkeev, SN; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE 2001, 48, 2086-2092 View Abstract

Bias and frequency dependence of radiation-induced charge trapping in MOS devices. Felix, JA; Fleetwood, DM; Riewe, LC; Shaneyfelt, MR; Winokur, PS, IEEE TRANSACTIONS ON NUCLEAR SCIENCE 2001, 48, 2114-2120 View Abstract

Aging and baking effects on the radiation hardness of MOS capacitors. Karmarkar, AP; Choi, BK; Schrimpf, RD; Fleetwood, DM, IEEE TRANSACTIONS ON NUCLEAR SCIENCE 2001, 48, 2158-2163 View Abstract

Characterization of self-assembled monolayers formed from sodium S-alkyl thiosulfates on copper. Lusk, AT; Jennings, GK, LANGMUIR 2001, 17, 7830-7836 View Abstract

Silicon-on-insulator non-volatile field-effect transistor memory. Schwank, JR; Shaneyfelt, MR; Meisenheimer, TL; Draper, BL; Vanhesden, K; Fleetwood, DM, MICROELECTRONIC ENGINEERING 2001, 59, 253-258 View Abstract

Effect of platelet inhibition on pulmonary xenograft survival. Zorn, GL; Schroeder, C; Giorgio, TD; Farley, SM; Azimzadeh, AM; Robson, SC; Pierson, RN, XENOTRANSPLANTATION 2001, 8, 32-32

Defect generation by hydrogen at the Si-SiO2 interface. Rashkeev, SN; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, PHYSICAL REVIEW LETTERS 2001, 8716, 165506 View Abstract

Core centering of immiscible compound drops in capillary oscillations: Experimental observations. Anilkumar, AV; Hmelo, AB; Wang, TG, JOURNAL OF COLLOID AND INTERFACE SCIENCE 2001, 242, 465-469 View Abstract

Radiation-mediated control of drug delivery. Hallahan, DE; Qu, SM; Geng, L; Cmelak, A; Chakravarthy, A; Martin, W; Scarfone, C; Giorgio, T, AMERICAN JOURNAL OF CLINICAL ONCOLOGY-CANCER CLINICAL TRIALS 2001, 24, 473-480 View Abstract

Retinal vascular permeability determined by dual-tracer fluorescence angiography. Russ, PK; Gaylord, GM; Haselton, FR, ANNALS OF BIOMEDICAL ENGINEERING 2001, 29, 638-647 View Abstract

Interactions of hydrogen with CeO2. Sohlberg, K; Pantelides, ST; Pennycook, SJ, JOURNAL OF THE AMERICAN CHEMICAL SOCIETY 2001, 123, 6609-6611 View Abstract

NO2 gas sensing characteristics of Pt-Wo(3)-Si3N4-SiO2-Si-Al capacitor. Kim, CK; Lee, JH; Kang, WP; Yoo, KS; Jang, GE; Cho, NI, SENSORS AND ACTUATORS B-CHEMICAL 2001, 77, 67-71 View Abstract

Publications 4226-4250 of 4313 total