VINSE Publications
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Evidence of radiation-induced dopant neutralization in partially-depleted SOINMOSFETs. Akarvardar, K; Schrimpf, RD; Fleetwood, DM; Cristoloveanu, S; Gentil, P; Blalock, BJ, IEEE TRANSACTIONS ON NUCLEAR SCIENCE 2007, 54, 1920-1924 View Abstract
Doping-type dependence of damage in silicon diodes exposed to X-ray, proton, and He+ irradiations. Caussanel, M; Canals, A; Dixit, SK; Beck, MJ; Touboul, AD; Schrimpf, RD; Fleetwood, DM; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE 2007, 54, 1925-1930 View Abstract
Total dose and bias temperature stress effects for HfSiON on Si MOS capacitors. Chen, DK; Mamouni, EE; Zhou, XJ; Schrimpf, RD; Fleetwood, DM; Galloway, KF; Lee, S; Seo, H; Lucovsky, G; Jun, B; Cressler, JD, IEEE TRANSACTIONS ON NUCLEAR SCIENCE 2007, 54, 1931-1937 View Abstract
Understanding radiation- and hot carrier-induced damage processes in SiGeHBTs using mixed-mode electrical stress. Cheng, P; Jun, B; Sutton, A; Appaswamy, A; Zhu, CD; Cressler, JD; Schrimpf, RD; Fleetwood, DM, IEEE TRANSACTIONS ON NUCLEAR SCIENCE 2007, 54, 1938-1945 View Abstract
The application of RHBD to n-MOSFETs intended for use in cryogenic-temperature radiation environments. Jun, B; Sutton, AK; Diestelhorst, RM; Duperon, GJ; Cressler, JD; Black, JD; Haeffner, T; Reed, RA; Alles, ML; Schrimpf, RD; Fleetwood, DM; Marshall, PW, IEEE TRANSACTIONS ON NUCLEAR SCIENCE 2007, 54, 2100-2105
Band-to-band tunneling (BBT) induced leakage current enhancement in irradiated fully depleted SOI devices. Adell, PC; Barnaby, HJ; Schrimpf, RD; Vermeire, B, IEEE TRANSACTIONS ON NUCLEAR SCIENCE 2007, 54, 2174-2180 View Abstract
The effects of X-ray and proton irradiation on a 200 GHz/90 GHz complementary (npn+pnp) SiGe : C HBT technology. Diestelhorst, RM; Finn, S; Jun, B; Sutton, AK; Cheng, P; Marshall, PW; Cressler, JD; Schrimpf, RD; Fleetwood, DM; Gustat, H; Heinemann, B; Fischer, GG; Knoll, D; Tillack, B, IEEE TRANSACTIONS ON NUCLEAR SCIENCE 2007, 54, 2190-2195 View Abstract
Enhanced TID susceptibility in sub-100 nm bulk CMOS I/O transistors and circuits. McLain, M; Bamaby, HJ; Holbert, KE; Schrimpf, RD; Shah, H; Amort, A; Baze, M; Wert, J, IEEE TRANSACTIONS ON NUCLEAR SCIENCE 2007, 54, 2210-2217 View Abstract
The effects of proton and x-ray irradiation on the DC and AC performance of complementary (npn+pnp) SiGeHBTs on thick-film SOI. Bellini, M; Jun, B; Sutton, AK; Appaswamy, AC; Cheng, P; Cressler, JD; Marshall, PW; Schrimpf, RD; Fleetwood, DM; El-Kareh, B; Balster, S; Steinmann, P; Yasuda, H, IEEE TRANSACTIONS ON NUCLEAR SCIENCE 2007, 54, 2245-2250 View Abstract
The radiation tolerance of strained Si/SiGe n-MODFETs. Madan, A; Jun, B; Diestelhorst, RM; Appaswamy, A; Cressler, JD; Schrimpf, RD; Fleetwood, DM; Marshall, PW; Isaacs-Smith, T; Williams, JR; Koester, SJ, IEEE TRANSACTIONS ON NUCLEAR SCIENCE 2007, 54, 2251-2256 View Abstract
Impact of heavy ion energy and nuclear interactions on single-event upset and latchup in integrated circuits. Dodd, PE; Schwank, JR; Shaneyfelt, MR; Felix, JA; Paillet, P; Ferlet-Cavrois, V; Baggio, J; Reed, RA; Warren, KM; Weller, RA; Schrimpf, RD; Hash, GL; Dalton, SM; Hirose, K; Saito, H, IEEE TRANSACTIONS ON NUCLEAR SCIENCE 2007, 54, 2303-2311 View Abstract
Impact of ion energy and species on single event effects analysis. Reed, RA; Weller, RA; Mendenhall, MH; Lauenstein, JM; Warren, KM; Pellish, JA; Schrimpf, RD; Sierawski, BD; Massengill, LW; Dodd, PE; Shaneyfelt, MR; Felix, JA; Schwank, JR; Haddad, NF; Lawrence, RK; Bowman, JH; Conde, R, IEEE TRANSACTIONS ON NUCLEAR SCIENCE 2007, 54, 2312-2321 View Abstract
A generalized SiGe HBT single-event effects model for on-orbit event rate calculations. Pellish, JA; Reed, RA; Sutton, AK; Weller, RA; Carts, MA; Marshall, PW; Marshall, CJ; Krithivasan, R; Cressler, JD; Mendenhall, MH; Schrimpf, RD; Warren, KM; Sierawski, BD; Niu, GF, IEEE TRANSACTIONS ON NUCLEAR SCIENCE 2007, 54, 2322-2329 View Abstract
Effect of well and substrate potential modulation on single event pulse shape in deep submicron CMOS. DasGupta, S; Witulski, AF; Bhuva, BL; Alles, ML; Reed, RA; Amusan, OA; Ahlbin, JR; Schrimpf, RD; Massengill, LW, IEEE TRANSACTIONS ON NUCLEAR SCIENCE 2007, 54, 2407-2412 View Abstract
Monte-Carlo based on-orbit single event upset rate prediction for a radiation hardened by design latch. Warren, KM; Sierawski, BD; Reed, RA; Weller, RA; Carmichael, C; Lesea, A; Mendenhall, MH; Dodd, PE; Schrimpf, RD; Massengill, LW; Hoang, T; Wan, H; De Jong, JL; Padovani, R; Fabula, JJ, IEEE TRANSACTIONS ON NUCLEAR SCIENCE 2007, 54, 2419-2425 View Abstract
Distribution of proton-induced transients in silicon focal plane arrays. Howe, CL; Weller, RA; Reed, RA; Sierawski, BD; Marshall, PW; Marshall, CJ; Mendenhall, MH; Schrimpf, RD; Hubbs, JE, IEEE TRANSACTIONS ON NUCLEAR SCIENCE 2007, 54, 2444-2449 View Abstract
Effect of voltage fluctuations on the single event transient response of deep submicron digital circuits. Gadlage, MJ; Schrimpf, RD; Narasimham, B; Bhuva, BL; Eaton, PH; Benedetto, JM, IEEE TRANSACTIONS ON NUCLEAR SCIENCE 2007, 54, 2495-2499 View Abstract
Characterization of digital single event transient pulse-widths in 130-nm and 90-nm CMOS technologies. Narasimham, B; Bhuva, BL; Schrimpf, RD; Massengill, LW; Gadlage, MJ; Amusan, OA; Holman, WT; Witulski, AF; Robinson, WH; Black, JD; Benedetto, JM; Eaton, PH, IEEE TRANSACTIONS ON NUCLEAR SCIENCE 2007, 54, 2506-2511 View Abstract
Impact of total ionizing dose on the analog single event transient sensitivity of a linear bipolar integrated circuit. Bernard, MF; Dusseau, L; Buchner, S; McMorrow, D; Ecoffet, R; Boch, J; Vaille, JR; Schrimpf, RD; LaBel, K, IEEE TRANSACTIONS ON NUCLEAR SCIENCE 2007, 54, 2534-2540 View Abstract
The effects of angle of incidence and temperature on latchup in 65 nm technology. Hutson, JM; Pellish, JD; Boselli, G; Baumann, R; Reed, RA; Schrimpf, RD; Weller, RA; Massengill, LW, IEEE TRANSACTIONS ON NUCLEAR SCIENCE 2007, 54, 2541-2546 View Abstract
Noninvasive detection of matrix metalloproteinase activity in vivo using a novel magnetic resonance imaging contrast agent with a solubility switch. Lepage, M; Dow, WC; Melchior, M; You, Y; Fingleton, B; Quarles, CC; Pepin, C; Gore, JC; Matrisian, LM; McIntyre, JO, MOLECULAR IMAGING 2007, 6, 393-403 View Abstract
Charged exciton resonances in two and three dimensions. Mezei, JZ; Kruppa, AT; Varga, K, FEW-BODY SYSTEMS 2007, 41, 233-244 View Abstract
Thermodynamic properties and liquid-gas phase diagram of the dipolar hard-sphere fluid. Kalyuzhnyi, YV; Protsykevytch, IA; Cummings, PT, EPL 2007, 80, 56002 View Abstract
Venezuelan equine encephalitis virus replicon particles encoding respiratory syncytial virus surface glycoproteins induce protective mucosal responses in mice and cotton rats. Mok, H; Lee, S; Utley, TJ; Shepherd, BE; Polosukhin, VV; Collier, ML; Davis, NL; Johnston, RE; Crowe, JE, JOURNAL OF VIROLOGY 2007, 81, 13710-13722 View Abstract
Dual process dielectric formation for decoupling capacitors on flexible substrates. Raghuveer, R; Burkett, SL; Schaper, LW; Ulrich, RK; Rogers, BR; Geil, RD, IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES 2007, 30, 579-584 View Abstract
Publications 3176-3200 of 4326 total