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Plasma Etch #2 - Oxford PlasmaPro 100 Cobra


Contact: VINSE Cleanroom
ESB 111 - Cleanroom

Fee Structure

Get Access - Vanderbilt
Get Access - Non-Vanderbilt

The Oxford PlasmaPro 100 Cobra is a versatile dry etch tool for deep silicon etching using Bosch or cryogenic processes, as well as fluorine-based etching other compounds and dielectrics .  An inductively-coupled plasma (ICP) source creates a high density of reactive species, while ion energy can be controlled separately using the RIE source.


  • Process gases: C4F8, CHF3, CF4 (Upon request), SF6, O2, N2, Ar
  • ICP generator: 3000 W @ 13.56 MHz
  • RIE generator: 300 W @ 13.56 MHz
  • Mechanical clamp with helium backside cooling
  • Substrate temperature: 0 oC to 40 oC (Chiller mode), -150 oC to +400 oC (LN2 mode)
  • Substrate size: Up to 100 mm diameter (4 inch)