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Atomic Layer Deposition (ALD) - PicoSun R-200 Advanced


Contact: VINSE Cleanroom
ESB 111 - Cleanroom

Fee Structure

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The PicoSun R-200 Advanced system facilitates Plasma-Enhanced Atomic Layer Deposition (PE-ALD), a vapor deposition method which uses sequential, self-limiting surface reactions to deposit thin films submonolayers at a time.  This provides precise thickness control and highly conformal thin films for ultrathin film applications, high aspect ratio features and porous materials.


  • Precursors: TMA (Trimethylaluminum), TiCl4, TDMATi [Tetrakis(dimethylamido) titanium], H2O, O3, NH3
  • Deposited films: Al2O3, AlN, TiO2, TiN
  • Deposition rates: ~0.2 - 1.2 Å/cycle, depending on process
  • Substrate Temperature: 50℃ - 500℃, plasma 450℃
  • Sample types:
    • Wafers - up to 200 mm diameter (8 inch)
    • 156 mm x 156 mm solar Si wafers
    • 3D samples
    • Porous materials
    • Powders and particles