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VINSE - Vanderbilt Institute of Nanoscale Science and Engineering

VINSE - Vanderbilt Institute of Nanoscale Science and Engineering
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VINSE Publications

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Optical and material properties of sandwiched Si/SiGe/Si heterostructures. Feng, ZC; Yu, JW; Zhao, J; Yang, TR; Karunasiri, RPG; Lu, W; Collins, WE, SURFACE & COATINGS TECHNOLOGY 2006, 200, 3265-3269 View Abstract

Core-suction technique for the fabrication of optical fiber preforms. Goel, NK; Stolen, RH; Morgan, S; Kim, JK; Kominsky, D; Pickrell, G, OPTICS LETTERS 2006, 31, 438-440 View Abstract

Structural, optical, and magnetic properties of Mn-doped ZnO thin film. Xu, HY; Liu, YC; Xu, CS; Liu, YX; Shao, CL; Mu, R, JOURNAL OF CHEMICAL PHYSICS 2006, 124, 074707 View Abstract

Voltage-Calcium State-Space Dynamics During Initiation of Reentry

. Gray, RA; Iyer, A; Bray MA; Wikswo, JP, HEART RHYTHM 2006, 3, 247-248

PH-responsive membrane skins by surface-catalyzed polymerization. Bai, DS; Elliott, SM; Jennings, GK, CHEMISTRY OF MATERIALS 2006, 18, 5167-5169

Thermal desorption of gases and solvents from graphite and carbon nanotube surfaces. Ulbricht, H; Zacharia, R; Cindir, N; Hertel, T, CARBON 2006, 44(14), 2931-2942 View Abstract

Hydrogen bonding and induced dipole moments in water: Predictions from the Gaussian charge polarizable model and Car-Parrinello molecular dynamics. Dyer, PJ; Cummings, PT, JOURNAL OF CHEMICAL PHYSICS 2006, 125, 144519 View Abstract

Multiscale boundary conditions in crystalline solids: Theory and application to nanoindentation. Karpvov, EG; Yu, H; Park, HS; Liu, WK; Wang, QJ; Qian, D, INTERNATIONAL JOURNAL OF SOLIDS AND STRUCTURES 2006, 43, 6359-6379 View Abstract

Reactions of excess hydrogen at a Si(111) surface with H termination: First-principles calculations. Tsetseris, L; Pantelides, ST, PHYSICAL REVIEW B 2006, 74, 113301 View Abstract

Nanocarbon field emission devices. Subramanian, K; Wong, YM; Kang, WP; Davidson, JL; Choi, BK; Howell, M, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 2006, 203, 3042-3048 View Abstract

Uniform Cr2+ doping of physical vapor transport grown CdSxSe1-x crystals. Roy, UN; Babalola, OS; Jones, J; Cui, Y; Mounts, T; Zavalin, A; Morgan, S; Burger, A, JOURNAL OF ELECTRONIC MATERIALS 2005, 34, 19-22 View Abstract

Study on the initial deposition of ZrO2 on hydrogen terminated silicon and native silicon oxide surfaces by high vacuum chemical vapor deposition. Song, Z; Sullivan, LM; Rogers, BR, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 2005, 23, 165-176 View Abstract

N,O-dilithio-2-(N-methylamino) ethanol: An intramolecular mixed aggregate. Pratt, LM; Mu, R; Jones, DR, JOURNAL OF ORGANIC CHEMISTRY 2005, 70, 101-104 View Abstract

Single event transient propagation through digital optocouplers. Adell, PC; Mion, O; Schrimpf, RD; Chatry, C; Calvel, P; Melotte, MR, IEEE TRANSACTIONS ON NUCLEAR SCIENCE 2005, 52, 1136-1139 View Abstract

Single event transient effects in a voltage reference. Adell, PC; Schrimpf, RD; Cirba, CR; Holman, WT; Zhu, X; Barnaby, HJ; Mion, O, MICROELECTRONICS RELIABILITY 2005, 45, 355-359 View Abstract

Exponential decay lifetimes of excitons in individual single-walled carbon nanotubes. Hagen, A; Steiner, M; Raschke, MB; Lienau, C; Hertel, T; Qian, HH; Meixner, AJ; Hartschuh, A, PHYSICAL REVIEW LETTERS 2005, 95, 197401 View Abstract

Real-time cell dynamics with a multianalyte physiometer. Eklund, SE; Kozlov, E; Taylor, DE; Baudenbacher, R; Cliffel, DE, METHODS IN MOLECULAR BIOLOGY 2005, 303, 209-223

The murine coral implant model of bone metastasis. Lynch, CC; Halpern, J; Hamming, D; Martin, MD; Matrisian, LM; Shwartz, HS; Holt, GE, JOURNAL OF BONE AND MINERAL RESEARCH 2005, 20, P34-P35

Coupled electro-thermal simulations of single event burnout in power diodes. Albadri, AM; Schrimpf, RD; Walker, DG; Mahajan, SV, IEEE TRANSACTIONS ON NUCLEAR SCIENCE 2005, 52, 2194-2199 View Abstract

Magnetism in MnxGe1-x semiconductors mediated by impurity band carriers. Li, AP; Wendelken, JF; Shen, J; Feldman, LC; Thompson, JR; Weitering, HH, PHYSICAL REVIEW B 2005, 72, 195205 View Abstract

Proton-induced damage in gallium nitride-based Schottky diodes. Karmarkar, AP; White, BD; Buttari, D; Fleetwood, DM; Schrimpf, RD; Weller, RA; Brillson, LJ; Mishra, UK, IEEE TRANSACTIONS ON NUCLEAR SCIENCE 2005, 52, 2239-2244 View Abstract

Depth profiles, surface damage and lattice location of boron/deuterium co-doped diamond. Kalish, R; Dhar, S; Feldman, LC, DIAMOND AND RELATED MATERIALS 2005, 14, 1600-1604 View Abstract

Common origin for enhanced low-dose-rate sensitivity and bias temperature instability under negative bias. Tsetseris, L; Schrimpf, RD; Fleetwood, DM; Pease, RL; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE 2005, 52, 2265-2271 View Abstract

Interface trap passivation for SiO2/(0001) C-terminated 4H-SiC. Dhar, S; Feldman, LC; Wang, S; Isaacs-Smith, T; Williams, JR, JOURNAL OF APPLIED PHYSICS 2005, 98, 014902 View Abstract

The effects of aging on MOS irradiation and annealing response. Rodgers, MP; Fleetwood, DM; Schrimpf, RD; Batyrev, IG; Wang, S; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE 2005, 52, 2642-2648 View Abstract

Publications 3576-3600 of 4326 total