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Ronald D. Schrimpf

Orrin Henry Ingram Professor of Engineering
Professor of Electrical Engineering
Director, Institute for Space and Defense Electronics


Ron Schrimpf is the Director of the Institute for Space and Defense Electronics, which focuses on issues associated with using electronic devices in harsh environments. He works on semiconductor device physics, including designing, characterizing and simulating devices with nanometer scale feature sizes. The technologies with which he works include silicon FinFETs, ultra-thin silicon on insulator, GaN, and two-dimensional materials.


Chancellor’s Cup, 2010
Harvey Branscomb Distinguished Professor Award, 2008-2009
Orrin Henry Ingram Professor of Engineering, 2008-present
Chancellor’s Award for Research, 2003
Fellow of the IEEE, 2000
IEEE Nuclear and Plasma Sciences Society Early Achievement Award, 1996
Eight outstanding paper awards

Selected Publications:

Bias Dependence of Total Ionizing Dose Effects in SiGe-SiO2/HfO2 pMOS FinFETs. Duan, GX; Zhang, CX; Zhang, EX; Hachtel, J; Fleetwood, DM; Schrimpf, RD; Reed, RA; Alles, ML; Pantelides, ST; Bersuker, G; Young, CD, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 61, 2834-2838 , (2014) View Abstract

Gate Bias Dependence of Defect-Mediated Hot-Carrier Degradation in GaN HEMTs. Puzyrev, Y; Mukherjee, S; Chen, J; Roy, T; Silvestri, M; Schrimpf, RD; Fleetwood, DM; Singh, J; Hinckley, JM; Paccagnella, A; Pantelides, ST, IEEE TRANSACTIONS ON ELECTRON DEVICES, 61, 1316-1320 , (2014) View Abstract

Geometry Dependence of Total-Dose Effects in Bulk FinFETs. Chatterjee, I; Zhang, EX; Bhuva, BL; Reed, RA; Alles, ML; Mahatme, NN; Ball, DR; Schrimpf, RD; Fleetwood, DM; Linten, D; Simoen, E; Mitard, J; Claeys, C, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 61, 2951-2958 , (2014) View Abstract

RF Performance of Proton-Irradiated AlGaN/GaN HEMTs. Chen, J; Zhang, EX; Zhang, CX; McCurdy, MW; Fleetwood, DM; Schrimpf, RD; Kaun, SW; Kyle, ECH; Speck, JS, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 61, 2959-2964 , (2014) View Abstract

Single-Event Transient Response of InGaAs MOSFETs. Ni, K; Zhang, EX; Hooten, NC; Bennett, WG; McCurdy, MW; Sternberg, AL; Schrimpf, RD; Reed, RA; Fleetwood, DM; Alles, ML; Kim, TW; Lin, JQ; del Alamo, JA, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 61, 3550-3556 , (2014) View Abstract