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Michael L. Alles

Research Professor of Electrical Engineering

Research:

Michael L. Alles is the Associate Director of the Institute for Space and Defense Electronics, which focuses on issues associated with using electronic devices in harsh environments. His research programs include theoretical and experimental study of radiation-response implication of materials and structures used in current and emerging advanced nano-scaled devices used for processing and memory applications, nano-scaled electro-mechanical applications, and new integration schemes such as used in 2.5/3D electronics integration.

Selected Publications:

A Bias-Dependent Single-Event-Enabled Compact Model for Bulk FinFET Technologies. Kauppila, JS; Ball DR; Maharrey, JA; Harrinton, RC; Haeffner, Sternberg, AL; Alles, ML; Massengill, LW, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 63, 1635-1642 , (2019)

Estimating Terrestrial Neutron-Induced SEB Cross Sections and FIT Rates for High-Voltage SiC Power MOSFETs. Ball, DR; Sierawski, BD; Galloway, KF; Johnson, RA; Alles, ML; Sternberg, AL; Witulski, AF; Reed, RA; Schrimpf, RD; Javanainen, A; Lauenstein, JM, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 66, 337-343 , (2019) View Abstract

Monte Carlo Simulations to Explore the Impact of Physical Integration Schemes on Soft Errors in 3D. Breeding, M; Reed, R; Warren, K; Alles, M, INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, , , (2019)

Probing heavy ion radiation effects in silicon-carbide (SiC) via 3D integrated multimode 3 vibrating diaphragms. Che, H; Jia, H; Liao, W; Pashaei, V; Arutt, CN; McCurdy, MW; Zorman, CA; Reed, RA; Scrhimpf, RD; Alles, ML; Feng, PXL, APPLIED PHYSICS LETTERS, 114, , (2019)

Scaling effects on single-event transients in InGaAs FinFETs. Gong, H; Ni, K; Zhang, EX; Sternberg, AL; Kozub, JA; Ryder, KL; Keller, RF; Alles, ML; Reed, RA; Fleetwood, DM; Schrimpf, RD; Vardy, A; Cai, X; del Alamo, JA, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 65, 296-308 , (2018)