Michael L. Alles
Research Professor of Electrical Engineering
Research:Michael L. Alles is the Associate Director of the Institute for Space and Defense Electronics, which focuses on issues associated with using electronic devices in harsh environments. His research programs include theoretical and experimental study of radiation-response implication of materials and structures used in current and emerging advanced nano-scaled devices used for processing and memory applications, nano-scaled electro-mechanical applications, and new integration schemes such as used in 2.5/3D electronics integration.
A Bias-Dependent Single-Event-Enabled Compact Model for Bulk FinFET Technologies. Kauppila, JS; Ball DR; Maharrey, JA; Harrinton, RC; Haeffner, Sternberg, AL; Alles, ML; Massengill, LW, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 63, 1635-1642 , (2019)
Estimating Terrestrial Neutron-Induced SEB Cross Sections and FIT Rates for High-Voltage SiC Power MOSFETs. Ball, DR; Sierawski, BD; Galloway, KF; Johnson, RA; Alles, ML; Sternberg, AL; Witulski, AF; Reed, RA; Schrimpf, RD; Javanainen, A; Lauenstein, JM, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 66, 337-343 , (2019) View Abstract
Probing heavy ion radiation effects in silicon-carbide (SiC) via 3D integrated multimode 3 vibrating diaphragms. Che, H; Jia, H; Liao, W; Pashaei, V; Arutt, CN; McCurdy, MW; Zorman, CA; Reed, RA; Scrhimpf, RD; Alles, ML; Feng, PXL, APPLIED PHYSICS LETTERS, 114, , (2019)
Scaling effects on single-event transients in InGaAs FinFETs. Gong, H; Ni, K; Zhang, EX; Sternberg, AL; Kozub, JA; Ryder, KL; Keller, RF; Alles, ML; Reed, RA; Fleetwood, DM; Schrimpf, RD; Vardy, A; Cai, X; del Alamo, JA, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 65, 296-308 , (2018)