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Daniel M. Fleetwood

Olin H. Landreth Professor of Engineering
Professor and Chair of Electrical Engineering
Professor of Physics

Research:

Daniel M. Fleetwood received his B. S., M. S., and Ph. D. degrees in Physics from Purdue University in 1980, 1981, and 1984. Dan joined Sandia National Laboratories in Albuquerque, New Mexico, in 1984, and was named a Distinguished Member of the Technical Staff in the Radiation Technology and Assurance Department in 1990. In 1999 he left Sandia to accept the position of Professor of Electrical Engineering at Vanderbilt University in Nashville, Tennessee. In 2000, he was also named a Professor of Physics, in 2001 he was appointed Associate Dean for Research of the Vanderbilt School of Engineering, and in 2003 he was named Chair of the Electrical Engineering and Computer Science Department. Dan is the author of nearly 500 publications on radiation effects in microelectronics, ten of which have been recognized with Outstanding Paper Awards. These papers have been cited more than 13,000 times (citation h factor = 63, Google Scholar). A recent review article on low frequency noise (open access) can be found at: http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=7094326. In 2009, he received the IEEE Nuclear and Plasma Sciences Society’s Merit Award, which is the society’s highest individual technical honor. Dan is a Fellow of both the Institute for Electrical and Electronics Engineers and The American Physical Society, and a member of ASEE, Phi Beta Kappa, and Sigma Pi Sigma.

Awards:

2009 IEEE NPSS Merit Award – this is the top technical award given by IEEE NPSS, for lifetime achievement
Fellow, IEEE (M 87, SM 90, Fellow 1997)
Fellow of The American Physical Society, November 2001
Outstanding (O)/Meritorious (M) Student (S: as co-author) Conference Paper Awards: 24
Member, Phi Beta Kappa (National Honorary), Sigma Pi Sigma (National Physics Honorary), Phi Kappa Phi (National Honorary)
2007: Purdue University, College of Science, Distinguished Alumni Award
2002: Chancellor’s Research Award, for achievement in research and scholarship (with Ron Schrimpf, and Sokrates Pantelides). This was presented for work on 1/f noise and identification of structures for the O vacancy in SiO2.
2000: Named one of Top 250 most highly cited researchers in Engineering (1981-1999) by Inst. for Scientific Information
Discover Magazine (1998), R&D Magazine “R&D 100” (1997) and Industry Week “Technology of Year” (1997) Awards, for co-invention of protonic nonvolatile field effect transistor memory (patent issued 11/3/1998)
1990: Named Distinguished Member of Technical Staff, Sandia National Laboratories

Selected Publications:

1/f Noise and Defects in Microelectronic Materials and Devices. Fleetwood, DM, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 62, 1462-1486 , (2015) View Abstract

Influence of interfacial oxide on the optical properties of single layer CdTe/CdS quantum dots in porous silicon scaffolds. Gaur, G; Koktysh, DS; Fleetwood, DM; Weller, RA; Reed, RA; Weiss, SM, APPLIED PHYSICS LETTERS, 107, 063106 , (2015) View Abstract

Proton Irradiation as a Screen for Displacement-Damage Sensitivity in Bipolar Junction Transistors. Arutt, CN; Warren, KM; Schrimpf, RD; Weller, RA; Kauppila, JS; Rowe, JD; Sternberg, AL; Reed, RA; Ball, DR; Fleetwood, DM, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 62, 2498-2504 , (2015) View Abstract

Ultra-thin oxide growth on silicon during 10 keV x-ray irradiation. Bhandaru, S; Zhang, EX; Fleetwood, DM; Reed, RA; Weller, RA; Harl, RR; Rogers, BR; Weiss, SM, SURFACE SCIENCE, 635, 49-54 , (2015) View Abstract

Total Ionizing Dose Effects in MOS and Low-Dose-Rate-Sensitive Linear-Bipolar Devices. Fleetwood, DM, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 60, 1706-1730 , (2013) View Abstract