Electron Beam Lithograhy System - EBL Raith eLine

Overview

Contact: VINSE Cleanroom
ESB 111 - Cleanroom
615-343-1468

Fee Structure

Get Access - Vanderbilt
Get Access - Non-Vanderbilt

The Raith eLine Electron Beam Lithography system is a SEM0-style instrument that enables high resolution imaging and nanoscale device patterning of standard semiconductor, metal, and dielectric materials.  The tool combines high performance, exceptional versatility, and ease of use for both tool and software.

Capabilities

• Emission source: thermal field-emission tungsten coated with Zirconia
• Writing current: 5 pA-20 nA
• Operating voltage: 0.1 kV to 30 kV
• Aperture sizes: 7.5, 10, 20, 30, 60, 120 μm
• Beam size: 2 nm at 20 kV at 3 mm working distance
• Detectors:
  • SE2 (secondary electron detector)
  • In-Lens
• Chamber optical camera
• Sample size:
  • Holder has clips for up to 6 20 mm x 20 mm samples simultaneously
  • Maximum sample size: 1 3 inch diameter wafer
  • Maximum sample height: <11 mm
• Write field size: 5 μm to 2 mm
• Precision stage controller
• Minimum feature size: < 20 nm dependant on column parameters, sample and resist type
• Airlock for quick sample exchange (~8 minutes)
• High Speed (2.5MHz) pattern generator
• Laser Interferometer for metrology and height corrections