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Atomic Layer Deposition (ALD)

PicoSun R-200 Advanced

Overview

ALD
Silicon pillars etched in the Oxford PlasmaPro 100 Cobra ICP-RIE and covered with multiple conformal oxide layers using the Picosun R-200 Advanced ALD in the VINSE cleanroom. Imaged in the VINSE facilities using the FEI Tecnai G2 Osiris S/TEM. (Cole Patterson, VINSE Tech Crew & Owen Meilander, Mona Ebrish group)

The PicoSun R-200 Advanced system facilitates Plasma-Enhanced Atomic Layer Deposition (PE-ALD), a vapor deposition method which uses sequential, self-limiting surface reactions to deposit thin films submonolayers at a time.  This provides precise thickness control and highly conformal thin films for ultrathin film applications, high aspect ratio features and porous materials.

Capabilities

ALD
  • Precursors: TMA (Trimethylaluminum), TiCl4, TDMATi [Tetrakis(dimethylamido) titanium], H2O, O3, NH3
  • Deposited films: Al2O3, AlN, TiO2, TiN
  • Deposition rates: ~0.2 - 1.2 Å/cycle, depending on process
  • Substrate Temperature: 50℃ - 500℃, plasma 450℃
  • Sample types:
    • Wafers - up to 200 mm diameter (8 inch)
    • 156 mm x 156 mm solar Si wafers
    • 3D samples
    • Porous materials
    • Powders and particles
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Contact

  • VINSE Cleanroom

    VINSE Cleanroom

    Dr. Ben Schmidt, Manager

    Dr. Christina McGahan
    Megan Dernberger

    • 111 Engineering Science Building

Get Access

Vanderbilt User Access
External User Access