VINSE Publications
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The Role of Irradiation Bias on the Time-Dependent Dielectric Breakdown of 130-nm MOSFETs Exposed to X-rays. Silvestri, M; Gerardin, S; Schrimpf, RD; Fleetwood, DM; Faccio, F; Paccagnella, A, IEEE TRANSACTIONS ON NUCLEAR SCIENCE 2009, 56, 3244-3249 View Abstract
Tribology of Monolayer Films: Comparison between n-Alkanethiols on Gold and n-Alkyl Trichlorosilanes on Silicon. Booth, BD; Vilt, SG; McCabe, C; Jennings, GK, LANGMUIR 2009, 25, 9995-10001 View Abstract
Fin-Width Dependence of Ionizing Radiation-Induced Subthreshold-Swing Degradation in 100-nm-Gate-Length FinFETs. El Mamouni, F; Zhang, EX; Schrimpf, RD; Fleetwood, DM; Reed, RA; Cristoloveanu, S; Xiong, WZ, IEEE TRANSACTIONS ON NUCLEAR SCIENCE 2009, 56, 3250-3255 View Abstract
ELDRS in Bipolar Linear Circuits: A Review. Pease, RL; Schrimpf, RD; Fleetwood, DM, IEEE TRANSACTIONS ON NUCLEAR SCIENCE 2009, 56, 1894-1908 View Abstract
The Enhanced Role of Shallow-Trench Isolation in Ionizing Radiation Damage of 65 nm RF-CMOS on SOI. Madan, A; Verma, R; Arora, R; Wilcox, EP; Cressler, JD; Marshall, PW; Schrimpf, RD; Cheng, PF; Del Castillo, LY; Liang, QQ; Freeman, G, IEEE TRANSACTIONS ON NUCLEAR SCIENCE 2009, 56, 3256-3261 View Abstract
Total Ionizing Dose Effects on Ge pMOSFETs With High-k Gate Stack: On/Off Current Ratio. Kulkarni, SR; Schrimpf, RD; Galloway, KF; Arora, R; Claeys, C; Simoen, E, IEEE TRANSACTIONS ON NUCLEAR SCIENCE 2009, 56, 1926-1930 View Abstract
The Use of a Dose-Rate Switching Technique to Characterize Bipolar Devices. Boch, J; Velo, YG; Saigne, F; Roche, NJH; Schrimpf, RD; Vaille, JR; Dusseau, L; Chatry, C; Lorfevre, E; Ecoffet, R; Touboul, AD, IEEE TRANSACTIONS ON NUCLEAR SCIENCE 2009, 56, 3347-3353 View Abstract
Use of a Contacted Buried n(+) Layer for Single Event Mitigation in 90 nm CMOS. DasGupta, S; Amusan, OA; Alles, ML; Witulski, AF; Massengill, LW; Bhuva, BL; Schrimpf, RD; Reed, RA, IEEE TRANSACTIONS ON NUCLEAR SCIENCE 2009, 56, 2008-2013 View Abstract
The Effects of Aging and Hydrogen on the Radiation Response of Gated Lateral PNP Bipolar Transistors. Hughart, DR; Schrimpf, RD; Fleetwood, DM; Chen, XJ; Barnaby, HJ; Holbert, KE; Pease, RL; Platteter, DG; Tuttle, BR; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE 2009, 56, 3361-3366 View Abstract
Effects of Surrounding Materials on Proton-Induced Energy Deposition in Large Silicon Diode Arrays. Howe, CL; Weller, RA; Reed, RA; Sierawski, BD; Marshall, PW; Marshall, CJ; Mendenhall, MH; Schrimpf, RD; Hubbs, JE, IEEE TRANSACTIONS ON NUCLEAR SCIENCE 2009, 56, 2167-2170 View Abstract
Radioactive Nuclei Induced Soft Errors at Ground Level. Wrobel, F; Saigne, F; Gedion, M; Gasiot, J; Schrimpf, RD, IEEE TRANSACTIONS ON NUCLEAR SCIENCE 2009, 56, 3437-3441 View Abstract
Diamond Vacuum Electronic Device Behavior After High Neutron Fluence Exposure. Davidson, JL; Kang, WP; Subramanian, K; Holmes-Siedle, AG; Reed, RA; Galloway, KF, IEEE TRANSACTIONS ON NUCLEAR SCIENCE 2009, 56, 2225-2229 View Abstract
Heavy-Ion-Induced Digital Single Event Transients in a 180 nm Fully Depleted SOI Process. Gadlage, MJ; Gouker, P; Bhuva, BL; Narasimham, B; Schrimpf, RD, IEEE TRANSACTIONS ON NUCLEAR SCIENCE 2009, 56, 3483-3488 View Abstract
Modeling the Radiation Response of Fully-Depleted SOI n-Channel MOSFETs. Esqueda, IS; Barnaby, HJ; McLain, ML; Adell, PC; Mamouni, FE; Dixit, SK; Schrimpf, RD; Xiong, W, IEEE TRANSACTIONS ON NUCLEAR SCIENCE 2009, 56, 2247-2250 View Abstract
Review on carbon-derived, solid-state, micro and nano sensors for electrochemical sensing applications. Qureshi, A; Kang, WP; Davidson, JL; Gurbuz, Y, DIAMOND AND RELATED MATERIALS 2009, 18, 1401-1420 View Abstract
Osteoclast-Derived Matrix Metalloproteinase-7, but Not Matrix Metalloproteinase-9, Contributes to Tumor-Induced Osteolysis. Thiolloy, S; Halpern, J; Holt, GE; Schwartz, HS; Mundy, GR; Matrisian, LM; Lynch, CC, CANCER RESEARCH 2009, 69, 6747-6755 View Abstract
Exploring the Relationships Between Main Group and f-Element Chemistry Transfer of ownership for 2010 Preface. Hanusa, T, MAIN GROUP CHEMISTRY 2009, 8, 223-224
Ambient temperature imidazolium-based ionic liquids with tetrachloronickelate(II) anions. Meredith, MB; McMillen, CH; Goodman, JT; Hanusa, TP, POLYHEDRON 2009, 28, 2355-2358 View Abstract
Solvent-resistant structures of base-free lithium and potassium allyl complexes, M[(SiMe3)(n)C3H5-n] (M = Li, n=3; M = K, n=2). Gren, CK; Hanusa, TP; Rheingold, AL, MAIN GROUP CHEMISTRY 2009, 8, 225-235 View Abstract
Surface and Frictional Properties of Two-Component Alkylsilane Monolayers and Hydroxyl-Terminated Monolayers on Silicon. Vilt, SG; Leng, ZW; Booth, BD; McCabe, C; Jennings, GK, JOURNAL OF PHYSICAL CHEMISTRY C 2009, 113, 14972-14977 View Abstract
Screening in Nanowires and Nanocontacts: Field Emission, Adhesion Force, and Contact Resistance. Zhang, XG; Pantelides, ST, NANO LETTERS 2009, 9, 4306-4310 View Abstract
Preclinical Drug Development Must Consider the Impact on Metastasis. Steeg, PS; Anderson, RL; Bar-Eli, M; Chambers, AF; Eccles, SA; Hunter, K; Itoh, K; Kang, YB; Matrisian, LM; Sleeman, JP; Theodorescu, D; Thompson, EW; Welch, DR, CLINICAL CANCER RESEARCH 2009, 15, 4529-4530
Performance of monolayer graphene nanomechanical resonators with electrical readout. Chen, CY; Rosenblatt, S; Bolotin, KI; Kalb, W; Kim, P; Kymissis, I; Stormer, HL; Heinz, TF; Hone, J, NATURE NANOTECHNOLOGY 2009, 4, 861-867 View Abstract
Characterization of boron charge traps at the interface of Si/SiO2 using second harmonic generation. Park, H; Qi, J; Xu, Y; Varga, K; Weiss, SM; Rogers, BR; Lupke, G; Tolk, N, APPLIED PHYSICS LETTERS 2009, 95, 062102 View Abstract
Fluorescence microscopy benefits from advances in single-photon detectors. Benninger, RKP; Piston, DW, LASER FOCUS WORLD 2009, 45, 59-+ View Abstract
Publications 2851-2875 of 4326 total