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Kenneth F. Galloway

Distinguished Professor of Engineering
Professor of Electrical Engineering

Research:

Kenneth F. Galloway is a Distinguished Professor of Engineering at Vanderbilt University. An alumnus of Vanderbilt, he earned his doctorate from the University of South Carolina and has held professional appointments at Indiana University, NAVSEA-Crane, the National Institute of Standards and Technology, the University of Maryland, and the University of Arizona before returning to Vanderbilt as Dean of Engineering in 1996. He served as Dean from 1996 until 2012.

Dr. Galloway’s research and teaching activities are in solid-state devices, semiconductor technology, and radiation effects in electronics. Current interests focus on the effects of energetic heavy ions on the physical and electronic structure, reliability, and performance of semiconductor power devices, in particular silicon carbide devices.

Awards:

Distinguished Service Award, Tennessee Society of Professional Engineers, 2013
Fellow, American Society for Engineering Education, 2011
Richard F. Shea Distinguished Member Award of the IEEE Nuclear and Plasma Sciences Society, 2007
Fellow, American Physical Society, 2002
Radiation Effects Award of the IEEE Nuclear and Plasma Sciences Society, 2002
Fellow, American Association for the Advancement of Science, 1994
Fellow, Institute of Electrical and Electronics Engineers, 1986

Selected Publications:

Heavy Ion Induced Degradation in SiC Schottky Diodes: Bias and Energy Deposition Dependence. Javanainen, A; Galloway, KF; Nicklaw, C; Ferlet-Cavrois, V; Lauenstein, JM; Pintacuda, F; Reed, RA; Schrimpf, RD; Weller, RA; Virtanen, A, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, , , (submitted)

Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes. Javanainen, A; Galloway, KF; Ferlet-Cavrois, V; Lauenstein, JM; Pintacuda, F; Schrimpf, RD; Reed, RA; Virtanen, A, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 16, 208-212 , (2016) View Abstract

Total Ionizing Dose Effects on Ge Channel pFETs with Raised Si0.55Ge0.45 Source/Drain. Wang, L; Zhang, EX; Schrimpf, RD; Fleetwood, DM; Duan, GX; Hachtel, JA; Zhang, CX; Reed, RA; Samsel, IK; Alles, ML; Witters, L; Collaert, N; Linten, D; Mitard, J; Chisholm, MF; Pantelides, ST; Galloway, KF, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 62, 2412-2416 , (2015) View Abstract

A Brief Review of Heavy-Ion Radiation Degradation and Failure of Silicon UMOS Power Transistors. Galloway, KF, ELECTRONICS, 3, 582-593 , (2014) View Abstract