Plasma Etch #2

Oxford PlasmaPro 100 Cobra

Description:

Features

• 13.56 MHz driven substrate electrode
• Cooled and heated substrate electrode options
• Single wafer loadlock for wafer transfer
• Wafer clamping with Helium backside cooling is available for optimum wafer temperature control
• Solid state RF generators and close coupled matching networks ensures fast, consistent plasma matching

Options:

• Electrostatic shielding delivers reduced ion damage and reduced capacitive coupling
• Chamber wall heating and liners reduce cleaning requirements, and increases uptime
• Electrostatic chuck
• Endpoint detection by laser interferometry and/or optical emission spectroscopy can be fitted to enhance etch control

Deep etch test pattern

Si deep etch using Bosch process