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Plasma Etch #2

Oxford PlasmaPro 100 Cobra


  • 13.56 MHz driven substrate electrode
  • Cooled and heated substrate electrode options
  • Single wafer loadlock for wafer transfer
  • Wafer clamping with Helium backside cooling is available for optimum wafer temperature control
  • Solid state RF generators and close coupled matching networks ensures fast, consistent plasma matching
  • Electrostatic shielding delivers reduced ion damage and reduced capacitive coupling
  • Chamber wall heating and liners reduce cleaning requirements, and increases uptime
  • Electrostatic chuck
  • Endpoint detection by laser interferometry and/or optical emission spectroscopy can be fitted to enhance etch control

Deep etch test pattern

Si deep etch using Bosch process