Plasma Etch #2
Oxford PlasmaPro 100 Cobra
Description:
Features
- 13.56 MHz driven substrate electrode
- Cooled and heated substrate electrode options
- Single wafer loadlock for wafer transfer
- Wafer clamping with Helium backside cooling is available for optimum wafer temperature control
- Solid state RF generators and close coupled matching networks ensures fast, consistent plasma matching
Options:
- Electrostatic shielding delivers reduced ion damage and reduced capacitive coupling
- Chamber wall heating and liners reduce cleaning requirements, and increases uptime
- Electrostatic chuck
- Endpoint detection by laser interferometry and/or optical emission spectroscopy can be fitted to enhance etch control
Deep etch test pattern
Si deep etch using Bosch process