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Dasgupta, Aritra
Ph.D. in Electrical Engineering, August 2011

Research Information

Ph.D. in Electrical Engineering, August 2011

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Ph.D. Thesis
Radiation Response in MOS Devices with High-K Oxides and Metal Gate

Ph.D. Thesis Advisor
Daniel Fleetwood

Ph.D. Committee
Marcus Mendenhall
Sokrates Pantelides
Robert Reed
Robert Weller

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Selected Publications

Dose Enhancement and Reduction in SiO2 and High-kappa MOS Insulators. Dasgupta, A; Fleetwood, DM; Reed, RA; Weller, RA; Mendenhall, MH; Sierawski, BD, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 57, 3463-3469 , (2010)

Effects of Total Dose Irradiation on the Gate-Voltage Dependence of the 1/f Noise of nMOS and pMOS Transistors. Francis, SA; Dasgupta, A; Fleetwood, DM, IEEE TRANSACTIONS ON ELECTRON DEVICES, 57, 503-510 , (2010)

Effects of Moisture and Hydrogen Exposure on Radiation-Induced MOS Device Degradation and Its Implications for Long-Term Aging. Schwank, JR; Shaneyfelt, MR; Dasgupta, A; Francis, SA; Zhou, XJ; Fleetwood, DM; Schrimpf, RD; Pantelides, ST; Felix, JA; Dodd, PE; Ferlet-Cavrois, V; Paillet, P; Dalton, SM; Swanson, SE; Hash, GL; Thornberg, SM; Hochrein, JM; Lum, GK, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 3206-3215 , (2008)

Effects of aging on the 1/f noise of metal-oxide-semiconductor field effect transistors. Zhou, XJ; Fleetwood, DM; Danciu, I; Dasgupta, A; Francis, SA; Touboul, AD, APPLIED PHYSICS LETTERS, 91, 173501 , (2007)

 
Vanderbilt University