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Pellish, Jonathan
Ph.D. in Electrical Engineering, December 2008

Research Information

Ph.D. in Electrical Engineering, December 2008

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Ph.D. Dissertation
Bulk Silicon-Germanium Heterojunction Biopolar Transistor Process Feature Implications for Single-Event Effects Analysis and Charge Collection Mechanisms

Ph.D. Advisor
Robert Weller, Electrical Engineering

Ph.D. Committee
Daniel Fleetwood
Robert Weller
Ronald Schrimpf
Paul Sheldon

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Selected Publications

Evidence for Lateral Angle Effect on Single-Event Latchup in 65 nm SRAMs. Hutson, JM; Pellish, JA; Tipton, AD; Boselli, G; Xapsos, MA; Kim, H; Friendlich, M; Campola, M; Seidleck, S; LaBel, K; Marshall, A; Deng, X; Baumann, R; Reed, RA; Schrimpf, RD; Weller, RA; Massengill, LW, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56, 208-213 , (2009)

Heavy Ion Microbeam- and Broadbeam-Induced Transients in SiGe HBTs. Pellish, JA; Reed, RA; McMorrow, D; Vizkelethy, G; Cavrois, VF; Baggio, J; Paillet, P; Duhamel, O; Moen, KA; Phillips, SD; Diestelhorst, RM; Cressler, JD; Sutton, AK; Raman, A; Turowski, M; Dodd, PE; Alles, ML; Schrimpf, RD; Marshall, PW; LaBel, KA, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56, 3078-3084 , (2009)

Impact of Low-Energy Proton Induced Upsets on Test Methods and Rate Predictions. Sierawski, BD; Pellish, JA; Reed, RA; Schrimpf, RD; Warren, KM; Weller, RA; Mendenhall, MH; Black, JD; Tipton, AD; Xapsos, MA; Baumann, RC; Deng, XW; Campola, MJ; Friendlich, MR; Kim, HS; Phan, AM; Seidleck, CM, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56, 3085-3092 , (2009)

Laser-Induced Current Transients in Strained-Si Diodes. Park, H; Cummings, DJ; Arora, R; Pellish, JA; Reed, RA; Schrimpf, RD; McMorrow, D; Armstrong, SE; Roh, U; Nishida, T; Law, ME; Thompson, SE, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56, 3203-3209 , (2009)

Assessing alpha particle-induced single event transient vulnerability in a 90-nm CMOS technology. Gadlage, MJ; Schrimpf, RD; Narasimham, B; Pellish, JA; Warren, KM; Reed, RA; Weller, RA; Bhuva, BL; Massengill, LW; Zhu, XW, IEEE ELECTRON DEVICE LETTERS, 29, 638-640 , (2008)

Device-Orientation Effects on Multiple-Bit Upset in 65 nm SRAMs. Tipton, AD; Pellish, JA; Hutson, JM; Baumann, R; Deng, X; Marshall, A; Xapsos, MA; Kim, HS; Friendlich, MR; Campola, MJ; Seidleck, CM; Label, KA; Mendenhall, MH; Reed, RA; Schrimpf, RD; Weller, RA; Black, JD, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 2880-2885 , (2008)

Increased Rate of Multiple-Bit Upset From Neutrons at Large Angles of Incidence. Tipton, AD; Zhu, XW; Weng, HX; Pellish, JA; Fleming, PR; Schrimpf, RD; Reed, RA; Weller, RA; Mendenhall, M, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 8, 565-570 , (2008)

Single event upset mechanisms for low-energy-deposition events in SiGeHBTs. Montes, EJ; Reed, RA; Pellish, JA; Alles, ML; Schrimpf, RD; Weller, RA; Varadharajaperumal, M; Niu, GF; Sutton, AK; Diestelhorst, R; Espinel, G; Krithivasan, R; Comeau, JP; Cressler, JD; Marshall, PW; Vizkelethy, G, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 1581-1586 , (2008)

A generalized SiGe HBT single-event effects model for on-orbit event rate calculations. Pellish, JA; Reed, RA; Sutton, AK; Weller, RA; Carts, MA; Marshall, PW; Marshall, CJ; Krithivasan, R; Cressler, JD; Mendenhall, MH; Schrimpf, RD; Warren, KM; Sierawski, BD; Niu, GF, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 2322-2329 , (2007)

Applications of heavy ion microprobe for single event effects analysis. Reed, RA; Vizkelethy, G; Pellish, JA; Sierawski, B; Warren, KM; Porter, M; Wilkinson, J; Marshall, PW; Niu, G; Cressler, JD; Schrimpf, RD; Tipton, A; Weller, RA, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 261, 443-446 , (2007)

Impact of ion energy and species on single event effects analysis. Reed, RA; Weller, RA; Mendenhall, MH; Lauenstein, JM; Warren, KM; Pellish, JA; Schrimpf, RD; Sierawski, BD; Massengill, LW; Dodd, PE; Shaneyfelt, MR; Felix, JA; Schwank, JR; Haddad, NF; Lawrence, RK; Bowman, JH; Conde, R, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 2312-2321 , (2007)

Predicting thermal neutron-induced soft errors in static memories using TCAD and physics-based Monte Carlo simulation tools. Warren, KM; Sierawski, BD; Weller, RA; Reed, RA; Mendenhall, MH; Pellish, JA; Schrimpf, RD; Massengill, LW; Porter, ME; Wilkinson, JD, IEEE ELECTRON DEVICE LETTERS, 28, 180-182 , (2007)

 
Vanderbilt University