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Dhar, Sarit
Ph.D. in Interdisiplinary Materials Science, May 2005

Research Information

Ph.D. in Interdisciplinary Materials Science, May 2005

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Ph.D. Dissertation
Nitrogen and Hydrogen Indiced Trap Passivation at the SiO2/4H-SiC Interface

Ph.D. Advisor
Leonard Feldman, Physics

Ph.D. Committee
Sokrates Pantelides, Physics
Daniel Fleetwood, Electrical Engineering
Bridget Rogers, Chemical Engineering
John Williams, Auburn University

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Current Position
Research Scientist, Cree Inc.


Selected Publications

Atomic-scale origins of bias-temperature instabilities in SiC-SiO2 structures. Shen, XA; Zhang, EX; Zhang, CX; Fleetwood, DM; Schrimpf, RD; Dhar, S; Ryu, SH; Pantelides, ST, APPLIED PHYSICS LETTERS, 98, 063507 , (2011)

High electron mobility due to sodium ions in the gate oxide of SiC-metal-oxide-semiconductor field-effect transistors. Tuttle, BR; Dhar, S; Ryu, SH; Zhu, X; Williams, JR; Feldman, LC; Pantelides, ST, JOURNAL OF APPLIED PHYSICS, 109, 023702 , (2011)

Chemical Properties of Oxidized Silicon Carbide Surfaces upon Etching in Hydrofluoric Acid. Dhar, S; Seitz, O; Halls, MD; Choi, S; Chabal, YJ; Feldman, LC, JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 131, 16808-16813 , (2009)

Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC. Rozen, J; Dhar, S; Zvanut, ME; Williams, JR; Feldman, LC, JOURNAL OF APPLIED PHYSICS, 105, 124506 , (2009)

Electron capture and emission properties of interface states in thermally oxidized and NO-annealed SiO2/4H-SiC. Chen, XD; Dhar, S; Isaacs-Smith, T; Williams, JR; Feldman, LC; Mooney, PM, JOURNAL OF APPLIED PHYSICS, 103, 033701 , (2008)

Increase in oxide hole trap density associated with nitrogen incorporation at the SiO2/SiC interface. Rozen, J; Dhar, S; Dixit, SK; Afanas'ev, VV; Roberts, FO; Dang, HL; Wang, S; Pantelides, ST; Williams, JR; Feldman, LC, JOURNAL OF APPLIED PHYSICS, 103, 124513 , (2008)

Pressure dependence of SiO2 growth kinetics and electrical properties on SiC. Ray, EA; Rozen, J; Dhar, S; Feldman, LC; Williams, JR, JOURNAL OF APPLIED PHYSICS, 103, 023522 , (2008)

Pressure dependence of SiO2 growth kinetics and electrical properties on SiC (vol 103, art no 023522, 2008). Ray, EA; Rozen, J; Dhar, S; Feldman, LC; Williams, JR, JOURNAL OF APPLIED PHYSICS, 104, 039908 , (2008)

Synthesis and characterization of porous TiO2 with wormhole-like framework structure. Narayanaswamy, A; McBride, J; Swafford, LA; Dhar, S; Budai, JD; Feldman, LC; Rosenthal, SJ, JOURNAL OF POROUS MATERIALS, 15, 21-27 , (2008)

Ultrashallow defect states at SiO2/4H-SiC interfaces. Dhar, S; Chen, XD; Mooney, PM; Williams, JR; Feldman, LC, APPLIED PHYSICS LETTERS, 92, 102112 , (2008)

Bonding at the SiC-SiO2 interface and the effects of nitrogen and hydrogen. Wang, SW; Dhar, S; Wang, SR; Ahyi, AC; Franceschetti, A; Williams, JR; Feldman, LC; Pantelides, ST, PHYSICAL REVIEW LETTERS, 98, 026101 , (2007)

Nitridation of the SiO2/4H-SiC interface studied by surface-enhanced Raman spectroscopy. Choi, SH; Wang, D; Williams, JR; Park, M; Lu, W; Dhar, S; Feldman, LC, APPLIED SURFACE SCIENCE, 253, 5411-5414 , (2007)

Suppression of interface state generation upon electron injection in nitrided oxides grown on 4H-SiC. Rozen, J; Dhar, S; Pantelides, ST; Feldman, LC; Wang, S; Williams, JR; Afanas'ev, VV, APPLIED PHYSICS LETTERS, 91, 153503 , (2007)

A novel technique for the fabrication of nanostructures on silicon carbide using amorphization and oxidation. Dhar, S; Davis, RP; Feldman, LC, NANOTECHNOLOGY, 17, 4514-4518 , (2006)

Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs. Pantelides, ST; Wang, S; Franceschetti, A; Buczko, R; Di Ventra, M; Rashkeev, SN; Tsetseris, L; Evans, MH; Batyrev, IG; Feldman, LC; Dhar, S; McDonald, K; Weller, RA; Schrimpf, RD; Fleetwood, DM; Zhou, XJ; Williams, JR; Tin, CC; Chung, GY; Isaacs-Smith, T; Wang, SR; Pennycook, SJ; Duscher, G; Van Benthem, K; Porter, LM, CHALLENGES AND ADVANCES, MATERIALS SCIENCE FORUM: SiC AND RELATED MATERIALS 2005, eds. R.P. Devaty, D.J. Larkin and S.E. Saddow, 527-529, 935-948 , (2006)

Silicon carbide and related materials 2005. Pantelides, ST; Wang, S; Franceschetti, A; Buczko, R; Di Ventra, M; Rashkeev, S; Feldman, LC; Dhar, S; McDonald, K; Weller, RA; Schrimpf, RD; Fleetwood, DM; Zhou, XJ; Williams, JR; Tin, CC; Chung, GY; Isaacs-Smith; Wang, SR; Pennycook, SJ; Duscher, G; Van Benthem, K; Porter, LM, MATERIALS SCIENCE FORUM, 935, , (2006)

Total dose radiation response of nitrided and non-nitrided SiO2/4H-SiC MOS capacitors. Dixit, SK; Dhar, S; Rozen, J; Wang, SW; Schrimpf, RD; Fleetwood, DM; Pantelides, ST; Williams, JR; Feldman, LC, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 53, 3687-3692 , (2006)

Depth profiles, surface damage and lattice location of boron/deuterium co-doped diamond. Kalish, R; Dhar, S; Feldman, LC, DIAMOND AND RELATED MATERIALS, 14, 1600-1604 , (2005)

High-resolution elemental profiles of the silicon dioxide/4H-silicon carbide interface. Chang, KC; Cao, Y; Porter, LM; Bentley, J; Dhar, S; Feldman, LC; Williams, JR, JOURNAL OF APPLIED PHYSICS, 97, 104920 , (2005)

Interface passivation for silicon dioxide layers on silicon carbide. Dhar, S; Wang, SR; Williams, JR; Pantelides, ST; Feldman, LC, MRS BULLETIN, 30, 288-292 , (2005)

Interface trap passivation for SiO2/(0001) C-terminated 4H-SiC. Dhar, S; Feldman, LC; Wang, S; Isaacs-Smith, T; Williams, JR, JOURNAL OF APPLIED PHYSICS, 98, 014902 , (2005)

Modification of the oxide/semiconductor interface by high temperature NO treatments: A combined EPR, NRA and XPS study on oxidized porous and bulk n-type 4H-SiC. von Bardeleben, HJ; Cantin, JL; Vickridge, IC; Song, YW; Dhar, S; Feldman, LC; Williams, JR; Ke, L; Shishkin, Y; Devaty, RP; Choyke, WJ, SILICON CARBIDE AND RELATED MATERIALS 2004, 483, 277-280 , (2005)

Nitridation anisotropy in SiO2/4H-SiC. Dhar, S; Feldman, LC; Chang, KC; Cao, Y; Porter, LM; Bentley, J; Williams, JR, JOURNAL OF APPLIED PHYSICS, 97, 074902 , (2005)

Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H-SiC at the oxide/(11(2)over-bar0) 4H-SiC interface. Dhar, S; Song, YW; Feldman, LC; Isaacs-Smith, T; Tin, CC; Williams, JR; Chung, G; Nishimura, T; Starodub, D; Gustafsson, T; Garfunkel, E, APPLIED PHYSICS LETTERS, 84, 1498-1500 , (2004)

Graphitic features on SiC surface following oxidation and etching using surface enhanced Raman spectroscopy. Lu, WJ; Feldman, LC; Song, Y; Dhar, S; Collins, WE; Mitchel, WC; Williams, JR, APPLIED PHYSICS LETTERS, 85, 3495-3497 , (2004)

Modified Deal Grove model for the thermal oxidation of silicon carbide. Song, Y; Dhar, S; Feldman, LC; Chung, G; Williams, JR, JOURNAL OF APPLIED PHYSICS, 95, 4953-4957 , (2004)

 
Vanderbilt University