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Zhou, Xing
Ph.D. in Interdisciplinary Materials Science, December 2006

Research Information

Ph.D. in Interdisciplinary Materials Science, December 2006

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Ph.D. Dissertation
Charge Trapping Properties of Alternative High-K Dielectrics in MOS Devices

Ph.D. Advisor
Daniel Fleetwood

Committee Members
Ronald Schrimpf, Electrical Engineering
Robert Weller. Electrical Engineering
Bridget Rogers, Chemical Engineering
Sokrates Pantelides, Physics

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Selected Publications

Effects of Moisture and Hydrogen Exposure on Radiation-Induced MOS Device Degradation and Its Implications for Long-Term Aging. Schwank, JR; Shaneyfelt, MR; Dasgupta, A; Francis, SA; Zhou, XJ; Fleetwood, DM; Schrimpf, RD; Pantelides, ST; Felix, JA; Dodd, PE; Ferlet-Cavrois, V; Paillet, P; Dalton, SM; Swanson, SE; Hash, GL; Thornberg, SM; Hochrein, JM; Lum, GK, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 3206-3215 , (2008)

Radiation Effects on the 1/f Noise of Field-Oxide Field Effect Transistors. Zhou, XJ; Fleetwood, DM; Schrimpf, RD; Faccio, F; Gonella, L, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 2975-2980 , (2008)

Effects of aging on the 1/f noise of metal-oxide-semiconductor field effect transistors. Zhou, XJ; Fleetwood, DM; Danciu, I; Dasgupta, A; Francis, SA; Touboul, AD, APPLIED PHYSICS LETTERS, 91, 173501 , (2007)

Effects of device aging on microelectronics radiation response and reliability. Fleetwood, DM; Rodgers, MP; Tsetseris, L; Zhou, XJ; Batyrev, I; Wang, S; Schrimpf, RD; Pantelides, ST, MICROELECTRONICS RELIABILITY, 47, 1075-1085 , (2007)

Hydrogen effects in MOS devices. Tsetseris, L; Fleetwood, DM; Schrimpf, RD; Zhou, XJ; Batyrev, IG; Pantelides, ST, MICROELECTRONIC ENGINEERING, 84, 2344-2349 , (2007)

Hydrogen in MOSFETs - A primary agent of reliability issues. Pantelides, ST; Tsetseris, L; Rashkeev, SN; Zhou, XJ; Fleetwood, DM; Schrimpf, RD, MICROELECTRONICS RELIABILITY, 47, 903-911 , (2007)

Hydrogen shuttling near Hf-defect complexes in Si/SiO2/HfO2 structures. Marinopoulos, AG; Batyrev, I; Zhou, XJ; Schrimpf, RD; Fleetwood, DM; Pantelides, ST, APPLIED PHYSICS LETTERS, 91, 233503 , (2007)

Hydrogen-related instabilities in MOS devices under bias temperature stress. Tsetseris, L; Zhou, XJ; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 7, 502-508 , (2007)

Radiation induced charge trapping in ultrathin HfO2-based MOSFETs. Dixit, SK; Zhou, XJ; Schrimpf, RD; Fleetwood, DM; Pantelide, ST; Choi, R; Bersuker, G; Feldman, LC, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 1883-1890 , (2007)

Total dose and bias temperature stress effects for HfSiON on Si MOS capacitors. Chen, DK; Mamouni, EE; Zhou, XJ; Schrimpf, RD; Fleetwood, DM; Galloway, KF; Lee, S; Seo, H; Lucovsky, G; Jun, B; Cressler, JD, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 1931-1937 , (2007)

Effects of switched-bias annealing on charge trapping in HfO2 gate dielectrics. Zhou, XJ; Fleetwood, DM; Tsetseris, L; Schrimpf, RD; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 53, 3636-3643 , (2006)

Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs. Pantelides, ST; Wang, S; Franceschetti, A; Buczko, R; Di Ventra, M; Rashkeev, SN; Tsetseris, L; Evans, MH; Batyrev, IG; Feldman, LC; Dhar, S; McDonald, K; Weller, RA; Schrimpf, RD; Fleetwood, DM; Zhou, XJ; Williams, JR; Tin, CC; Chung, GY; Isaacs-Smith, T; Wang, SR; Pennycook, SJ; Duscher, G; Van Benthem, K; Porter, LM, CHALLENGES AND ADVANCES, MATERIALS SCIENCE FORUM: SiC AND RELATED MATERIALS 2005, eds. R.P. Devaty, D.J. Larkin and S.E. Saddow, 527-529, 935-948 , (2006)

Silicon carbide and related materials 2005. Pantelides, ST; Wang, S; Franceschetti, A; Buczko, R; Di Ventra, M; Rashkeev, S; Feldman, LC; Dhar, S; McDonald, K; Weller, RA; Schrimpf, RD; Fleetwood, DM; Zhou, XJ; Williams, JR; Tin, CC; Chung, GY; Isaacs-Smith; Wang, SR; Pennycook, SJ; Duscher, G; Van Benthem, K; Porter, LM, MATERIALS SCIENCE FORUM, 935, , (2006)

Bias-temperature instabilities and radiation effects in MOS devices. Zhou, XJ; Fleetwood, DM; Felix, JA; Gusev, EP, D'Emic, C, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 52, 2231-2238 , (2005)

Physical mechanisms of negative-bias temperature instability. Tsetseris, L; Zhou, XJ; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, APPLIED PHYSICS LETTERS, 86, 142103 , (2005)

Dual role of fluorine at the Si-SiO2 interface. Tsetseris, L; Zhou, XJ; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, APPLIED PHYSICS LETTERS, 85, 4950-4952 , (2004)

Hole-enhanced reactions of water at the Si-SiO2 interface. Tsetseris, L; Zhou, XJ; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, MATERIALS RESEARCH SOCIETY PROCEEDINGS, 786, 171 , (2004)

Negative bias-temperature instabilities in metal-oxide-silicon devices with SiO2 and SiOxNy/HfO2 gate dielectrics. Zhou, XJ; Tsetseris, L; Rashkeev, SN; Fleetwood, DM; Schrimpf, RD; Pantelides, ST; Felix, JA; Gusev, EP; D'Emic, C, APPLIED PHYSICS LETTERS, 84, 4394-4396 , (2004)

Charge separation techniques for irradiated pseudo-MOS SOI transistors. Jun, B; Fleetwood, DM; Schrimpf, RD; Zhou, X; Montes, EJ; Cristoloveanu, S, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 50, 1891-1895 , (2003)

 
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