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Karmarkar, Aditya
Ph.D. in Interdisciplinary Materials Science, December 2005

Research Information

Ph.D. in Interdisciplinary Materials Science, December 2005

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Ph.D. Dissertation
Proton Irradiation Effects on Gallium Nitride-Based Devices

Ph.D. Advisor
Ronald Schrimpf, Electrical Engineering

Committee Members
Daniel Fleetwood, Electrical Engineering
Robert Weller, Electrical Enginering
Greg Walker, Mechanical Engineering
Leonard Feldman, Physics

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Selected Publications

Proton-induced damage in gallium nitride-based Schottky diodes. Karmarkar, AP; White, BD; Buttari, D; Fleetwood, DM; Schrimpf, RD; Weller, RA; Brillson, LJ; Mishra, UK, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 52, 2239-2244 , (2005)

Electrical, spectral, and chemical properties of 1.8 MeV proton irradiated AlGaN/GaN HEMT structures as a function of proton fluence. White, BD; Bataiev, M; Goss, SH; Hu, X; Karmarkar, A; Fleetwood, DM; Schrimpf, RD; Schaff, WJ; Brillson, LJ, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 50, 1934-1941 , (2003)

Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors. Hu, XW; Karmarkar, AP; Jun, B; Fleetwood, DM; Schrimpf, RD; Geil, RD; Weller, RA; White, BD; Bataiev, M; Brillson, LJ; Mishra, UK, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 50, 1791-1796 , (2003)

Aging and baking effects on the radiation hardness of MOS capacitors. Karmarkar, AP; Choi, BK; Schrimpf, RD; Fleetwood, DM, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 48, 2158-2163 , (2001)

 
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