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Rozen, John
Ph.D. in Interdisciplinary Materials Science, May 2008

Research Information

Ph.D. in Interdisciplinary Materials Science, May 2008

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Ph.D. Dissertation
Electronic Properties and Reliability of the SiO2/SiC Interface

Ph.D. Advisor
Leonard Feldman

Committee Members
Richard Haglund, Physics 
John Williams, Auburn University
Bridget Rogers, Chemical Engineering
Ronald Schrimpf, ELectrical Engineering

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Abstract. Energy efficiency is a primary concern in modern society because of increasing power consumption and decreasing natural resources. A global effort has begun towards the implementation of efficient electronics. In particular, the transportation and electrical generation sectors have been interested in silicon carbide (SiC), a large band-gap semiconductor which enables the control of high voltage signals with an efficiency orders of magnitude higher than commonly available silicon-based devices.
      SiC oxide-based devices, such as field-effect transistors, still need to be optimized before their release on the market. Even though silicon carbide has been preferred over other wide band-gap semiconductors because of its unique ability to grow a thermal oxide, challenges lie in the quality of the dielectric and of the SiO2/SiC interface.
      This thesis focussed on the electrical properties and the reliability of the oxide and its interface with silicon carbide. In particular, the effects of processing parameters, such as implant activation, oxidation conditions (partial pressure), and post-oxidation anneal (nitridation), are considered. Tests are performed on metal-oxide-semiconductor (MOS) capacitors probed by capacitance-voltage measurements (CV), carrier injection (tunneling, photo-emission, irradiation), and time-dependent dielectric breakdown (TDDB). The most important new finding is that nitrogen, required for passivating the complex SiO2/SiC interface, can be detrimental to its reliability. Indeed, nitridation leads to the formation of hole traps, yielding large voltage instabilities.


Selected Publications

The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H-SiC MOS devices. Zhu, XG; Ahyi, AC; Li, MY; Chen, ZJ; Rozen, J; Feldman, LC; Williams, JR, SOLID-STATE ELECTRONICS, 57, 76-79 , (2011)

Transport involving conducting fibers in a non-conducting matrix. Hansel, RA; Rozen, J; Walker, DG, INTERNATIONAL JOURNAL OF THERMAL SCIENCES, 49, 1561-1566 , (2010)

Charge Trapping Properties of 3C-and 4H-SiC MOS Capacitors With Nitrided Gate Oxides. Arora, R; Rozen, J; Fleetwood, DM; Galloway, KF; Zhang, CX; Han, JS; Dimitrijev, S; Kong, F; Feldman, LC; Pantelides, ST; Schrimpf, RD, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56, 3185-3191 , (2009)

Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC. Rozen, J; Dhar, S; Zvanut, ME; Williams, JR; Feldman, LC, JOURNAL OF APPLIED PHYSICS, 105, 124506 , (2009)

Increase in oxide hole trap density associated with nitrogen incorporation at the SiO2/SiC interface. Rozen, J; Dhar, S; Dixit, SK; Afanas'ev, VV; Roberts, FO; Dang, HL; Wang, S; Pantelides, ST; Williams, JR; Feldman, LC, JOURNAL OF APPLIED PHYSICS, 103, 124513 , (2008)

Pressure dependence of SiO2 growth kinetics and electrical properties on SiC. Ray, EA; Rozen, J; Dhar, S; Feldman, LC; Williams, JR, JOURNAL OF APPLIED PHYSICS, 103, 023522 , (2008)

Pressure dependence of SiO2 growth kinetics and electrical properties on SiC (vol 103, art no 023522, 2008). Ray, EA; Rozen, J; Dhar, S; Feldman, LC; Williams, JR, JOURNAL OF APPLIED PHYSICS, 104, 039908 , (2008)

Suppression of interface state generation upon electron injection in nitrided oxides grown on 4H-SiC. Rozen, J; Dhar, S; Pantelides, ST; Feldman, LC; Wang, S; Williams, JR; Afanas'ev, VV, APPLIED PHYSICS LETTERS, 91, 153503 , (2007)

Total dose radiation response of nitrided and non-nitrided SiO2/4H-SiC MOS capacitors. Dixit, SK; Dhar, S; Rozen, J; Wang, SW; Schrimpf, RD; Fleetwood, DM; Pantelides, ST; Williams, JR; Feldman, LC, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 53, 3687-3692 , (2006)

Two-dimensional current percolation in nanocrystalline vanadium dioxide films. Rozen, J; Lopez, R; Haglund, RF; Feldman, LC, APPLIED PHYSICS LETTERS, 88, 081902 , (2006)

 
Vanderbilt University