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Dixit, Sriram
Ph.D. in Interdisciplinary Materials Science, May 2008

Research Information

Ph.D. Dissertation
Radiation-Induced Charge Trapping Studies of Si and SiC Based MOS Devices

Ph.D. Advisor
Leonard Feldman, Physics

Committee Members
Daniel Fleetwood, Electrical Engineering
Ronald Schrimpf, Electrical Engineering
Norman Tolk, Physics
Greg Walker, Mechanical Engineering

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Abstract. Ionizing radiation exposure of metal-oxide-semiconductor (MOS) devices can alter their electrical performance, sometimes leading to failure. Permanent failure modes such as total dose effects due to continuous exposure to radiation and temporary effects from transient high-energy particle radiation, viz. single event effects, are some of the most commonly studied device failure mechanisms in the domain of radiation effects and reliability. Radiation species in the form of electrons, photons, neutrons, protons and other heavy ions are omnipresent in a space environment. Electronic systems in satellites deployed in space and in other areas, prone to radiation exposure, run the risk of suffering from these aforementioned damage events during everyday operation. Hence it is important to establish radiation-hardened electronics in satellites used for inter-planetary space exploration, communication, navigation and surveillance purposes.

Metal-oxide-semiconductor (MOS) devices are the most ubiquitous components used in modern day electronic equipments. Poly-Si/SiO2/Si has been the device configuration of choice for the electronics industry for almost four decades. The demand for faster and more robust processors requires the need to replace these conventional materials for future device technologies. Hafnium oxide with metal gates has already been announced as the material that will power the future technology scaling for low power devices. SiO2/SiC based devices are possible candidates for the upcoming high power device technologies. The generation, evolution and annealing of processing related, as well as radiation-induced defects, have been well understood from the perspective of current poly-Si/SiO2/Si MOS system. However similar proficiency in understanding the radiation effects in advanced Si based technologies for future low power applications and SiC based high power technologies is still lacking.

This dissertation provides significant insights into the charge trapping characteristics in these devices exposed to high energy ionizing radiation. Charge trapping is studied as a function of dose and gate oxide fields with extensive materials characterization performed before irradiations. The results provide additional information for establishing reliable design rules for future MOS devices intended for both, high and low operating voltage when exposed to a radiation environment.


Selected Publications

Reconfiguration and dissociation of bonded hydrogen in silicon by energetic ions. Rao, SVSN; Dixit, SK; Lupke, G; Tolk, NH; Feldman, LC, PHYSICAL REVIEW B, 83, 045204 , (2011)

Impact of Proton Irradiation-Induced Bulk Defects on Gate-Lag in GaN HEMTs. Kalavagunta, A; Silvestri, M; Beck, MJ; Dixit, SK; Schrimpf, RD; Reed, RA; Fleetwood, DM; Shen, L; Mishra, UK, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56, 3192-3195 , (2009)

Modeling the Radiation Response of Fully-Depleted SOI n-Channel MOSFETs. Esqueda, IS; Barnaby, HJ; McLain, ML; Adell, PC; Mamouni, FE; Dixit, SK; Schrimpf, RD; Xiong, W, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56, 2247-2250 , (2009)

Gate-Length and Drain-Bias Dependence of Band-to-Band Tunneling-Induced Drain Leakage in Irradiated Fully Depleted SOI Devices. Mamouni, FE; Dixit, SK; Schrimpf, RD; Adell, PC; Esqueda, IS; McLain, ML; Barnaby, HJ; Cristoloveanu, S; Xiong, WZ, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 3259-3264 , (2008)

Increase in oxide hole trap density associated with nitrogen incorporation at the SiO2/SiC interface. Rozen, J; Dhar, S; Dixit, SK; Afanas'ev, VV; Roberts, FO; Dang, HL; Wang, S; Pantelides, ST; Williams, JR; Feldman, LC, JOURNAL OF APPLIED PHYSICS, 103, 124513 , (2008)

Total Ionizing Dose Effects on Strained HfO2-Based nMOSFETs. Park, HW; Dixit, SK; Choi, YS; Schrimpf, RD; Fleetwood, DM; Nishida, T; Thompson, SE, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 2981-2985 , (2008)

Dopant segregation and giant magnetoresistance in manganese-doped germanium. Li, AP; Zeng, C; van Benthem, K; Chisholm, MF; Shen, J; Rao, SVSN; Dixit, SK; Feldman, LC; Petukhov, AG; Foygel, M; Weitering, HH, PHYSICAL REVIEW B, 75, 201201 , (2007)

Doping-type dependence of damage in silicon diodes exposed to X-ray, proton, and He+ irradiations. Caussanel, M; Canals, A; Dixit, SK; Beck, MJ; Touboul, AD; Schrimpf, RD; Fleetwood, DM; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 1925-1930 , (2007)

Effect of energetic ions on the stability of bond-center hydrogen in silicon. Rao, SVSN; Dixit, SK; Lupke, G; Tolk, NH; Feldman, LC, PHYSICAL REVIEW B, 75, 235202 , (2007)

PbS/PbSe structures with core-shell type morphology synthesized from PbS nanocrystals. Koktysh, DS; McBride, JR; Dixit, SK; Feldman, LC; Rosenthal, SJ, NANOTECHNOLOGY, 18, 495607 , (2007)

Radiation induced charge trapping in ultrathin HfO2-based MOSFETs. Dixit, SK; Zhou, XJ; Schrimpf, RD; Fleetwood, DM; Pantelide, ST; Choi, R; Bersuker, G; Feldman, LC, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 1883-1890 , (2007)

Homogeneously alloyed CdSxSe1-(x) nanocrystals: Synthesis, characterization, and composition/size-dependent band gap. Swafford, LA; Weigand, LA; Bowers, MJ; McBride, JR; Rapaport, JL; Watt, TL; Dixit, SK; Feldman, LC; Rosenthal, SJ, JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 128, 12299-12306 , (2006)

Synthesis and optical properties of PbS/PbSe nanocomposite particles. Koktysh, DS; McBride, JR; Dixit, SK; Feldman, LC; Rosenthal, SJ, ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 231, , (2006)

Total dose radiation response of nitrided and non-nitrided SiO2/4H-SiC MOS capacitors. Dixit, SK; Dhar, S; Rozen, J; Wang, SW; Schrimpf, RD; Fleetwood, DM; Pantelides, ST; Williams, JR; Feldman, LC, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 53, 3687-3692 , (2006)

Vibrational lifetimes and frequency-gap law of hydrogen bending modes in semiconductors. Sun, B; Shi, GA; Rao, SVSN; Stavola, M; Tolk, NH; Dixit, SK; Feldman, LC; Lupke, G, PHYSICAL REVIEW LETTERS, 96, 035501 , (2006)

Controlled synthesis, structure and properties of tin sulfide nanoparticles. Koktysh, DS; McBride, JR; Sriram, D; Feldman, LC; Rosenthal, SJ, ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 230, U2095-U2095 , (2005)

 
Vanderbilt University