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Arora, Rajan
M.S. in Electrical Engineering, August 2009

Research Information

M.S. in Electrical Engineering, August 2009
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Research Area
Radiation effects

Advisor
Ronald Schrimpf

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Selected Publications

Charge Trapping Properties of 3C-and 4H-SiC MOS Capacitors With Nitrided Gate Oxides. Arora, R; Rozen, J; Fleetwood, DM; Galloway, KF; Zhang, CX; Han, JS; Dimitrijev, S; Kong, F; Feldman, LC; Pantelides, ST; Schrimpf, RD, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56, 3185-3191 , (2009)

Laser-Induced Current Transients in Strained-Si Diodes. Park, H; Cummings, DJ; Arora, R; Pellish, JA; Reed, RA; Schrimpf, RD; McMorrow, D; Armstrong, SE; Roh, U; Nishida, T; Law, ME; Thompson, SE, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56, 3203-3209 , (2009)

Temperature Stress Response of Germanium MOS Capacitors with HfO2/HfSiON Gate Dielectric. Arora, R; Fleetwood, DM; Schrimpf, RD; Galloway, KF; Schmidt, BW; Rogers, BR; Chung KB; Lucovsky, G, ECS Transactions, 19, 803-814 , (2009)

The Enhanced Role of Shallow-Trench Isolation in Ionizing Radiation Damage of 65 nm RF-CMOS on SOI. Madan, A; Verma, R; Arora, R; Wilcox, EP; Cressler, JD; Marshall, PW; Schrimpf, RD; Cheng, PF; Del Castillo, LY; Liang, QQ; Freeman, G, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56, 3256-3261 , (2009)

Total Ionizing Dose Effects on Ge pMOSFETs With High-k Gate Stack: On/Off Current Ratio. Kulkarni, SR; Schrimpf, RD; Galloway, KF; Arora, R; Claeys, C; Simoen, E, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56, 1926-1930 , (2009)

 
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