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Schrimpf, Ronald
Orrin Henry Ingram Professor of Engineering
Professor of Electrical Engineering
Director, Institute for Space and Defense Electronics

Research Information

Ron Schrimpf's research interests focus on semiconductor devices, particularly issues related to radiation effects and reliability. He is the principal investigator for a Multi-disciplinary University Research Initiative (MURI) in the area of Radiation Effects in Emerging Electronic Materials and Devices. He is working on device  design and characterization for new electronic technologies.


Selected Publications

1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions. Roy, T; Puzyrev, YS; Zhang, EX; DasGupta, S; Francis, SA; Fleetwood, DM; Schrimpf, RD; Mishra, UK; Speck, JS; Pantelides, ST, MICROELECTRONICS RELIABILITY, 51, 212-216 , (2011)

Atomic-scale origins of bias-temperature instabilities in SiC-SiO2 structures. Shen, XA; Zhang, EX; Zhang, CX; Fleetwood, DM; Schrimpf, RD; Dhar, S; Ryu, SH; Pantelides, ST, APPLIED PHYSICS LETTERS, 98, 063507 , (2011)

Dehydrogenation of defects and hot-electron degradation in GaN high-electron-mobility transistors. Puzyrev, YS; Roy, T; Beck, M; Tuttle, BR; Schrimpf, RD; Fleetwood, DM; Pantelides, ST, JOURNAL OF APPLIED PHYSICS, 109, 034501 , (2011)

Single-Event Transient Measurements in nMOS and pMOS Transistors in a 65-nm Bulk CMOS Technology at Elevated Temperatures. Gadlage, MJ; Ahlbin, JR; Narasimham, B; Bhuva, BL; Massengill, LW; Schrimpf, RD, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 11, 179-186 , (2011)

Bias Effects on Total Dose-Induced Degradation of Bipolar Linear Microcircuits for Switched Dose-Rate Irradiation. Velo, YG; Boch, J; Roche, NJH; Perez, S; Vaille, JR; Dusseau, L; Saigne, F; Lorfevre, E; Schrimpf, RD; Chatry, C; Canals, A, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 57, 1950-1957 , (2010)

Contribution of Control Logic Upsets and Multi-Node Charge Collection to Flip-Flop SEU Cross-Section in 40-nm CMOS. Narasimham, B; Wang, JK; Buer, M; Gorti, R; Chandrasekharan, K; Warren, KM; Sierawski, BD; Schrimpf, RD; Reed, RA; Weller, RA, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 57, 3176-3182 , (2010)

Defect Interactions of H-2 in SiO2: Implications for ELDRS and Latent Interface Trap Buildup. Tuttle, BR; Hughart, DR; Schrimpf, RD; Fleetwood, DM; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 57, 3046-3053 , (2010)

Digital Control for Radiation-Hardened Switching Converters in Space. Adell, PC; Witulski, AF; Schrimpf, RD; Baronti, F; Holman, WT; Galloway, KF, IEEE TRANSACTIONS ON AEROSPACE AND ELECTRONIC SYSTEMS, 46, 761-770 , (2010)

Effects of fin width on memory windows in FinFET ZRAMs. Zhang, EX; Fleetwood, DM; Alles, ML; Schrimpf, RD; Mamouni, FE; Xiong, W; Cristoloveanu, S, SOLID-STATE ELECTRONICS, 54, 1155-1159 , (2010)

Effects of Halo Doping and Si Capping Layer Thickness on Total-Dose Effects in Ge p-MOSFETs. Arora, R; Simoen, E; Zhang, EX; Fleetwood, DM; Schrimpf, RD; Galloway, KF; Choi, BK; Mitard, J; Meuris, M; Claeys, C; Madan, A; Cressler, JD, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 57, 1933-1939 , (2010)

Effects of Processing and Radiation Bias on Leakage Currents in Ge pMOSFETs. Zhang, CX; Zhang, EX; Fleetwood, DM; Schrimpf, RD; Galloway, KF; Simoen, E; Mitard, J; Claeys, C, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 57, 3066-3070 , (2010)

Electrical-stress-induced degradation in AlGaN/GaN high electron mobility transistors grown under gallium-rich, nitrogen-rich, and ammonia-rich conditions. Roy, T; Puzyrev, YS; Tuttle, BR; Fleetwood, DM; Schrimpf, RD; Brown, DF; Mishra, UK; Pantelides, ST, APPLIED PHYSICS LETTERS, 96, 133503 , (2010)

Gate Bias Dependence of Single Event Charge Collection in AlSb/InAs HEMTs. DasGupta, S; McMorrow, D; Reed, RA; Schrimpf, RD; Boos, JB, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 57, 1856-1860 , (2010)

Heavy Ion Testing With Iron at 1 GeV/amu. Pellish, JA; Xapsos, MA; LaBel, KA; Marshall, PW; Heidel, DF; Rodbell, KP; Hakey, MC; Dodd, PE; Shaneyfelt, MR; Schwank, JR; Baumann, RC; Deng, XW; Marshall, A; Sierawski, BD; Black, JD; Reed, RA; Schrimpf, RD; Kim, HS; Berg, MD; Campola, MJ; Friendlich, MR; Perez, CE; Phan, AM; Seidleck, CM, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 57, 2948-2954 , (2010)

Hydrogen-dopant interactions in SiGe and strained Si. Tsetseris, L; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, APPLIED PHYSICS LETTERS, 96, 251905 , (2010)

Including the Effects of Process-Related Variability on Radiation Response in Advanced Foundry Process Design Kits. Li, YF; Rezzak, N; Zhang, EX; Schrimpf, RD; Fleetwood, DM; Wang, JQ; Wang, DL; Wu, YJ; Cai, SA, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 57, 3570-3574 , (2010)

Increased Single-Event Transient Pulsewidths in a 90-nm Bulk CMOS Technology Operating at Elevated Temperatures. Gadlage, MJ; Ahlbin, JR; Narasimham, B; Ramachandran, V; Dinkins, CA; Pate, ND; Bhuva, BL; Schrimpf, RD; Massengill, LW; Shuler, RL; McMorrow, D, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 10, 157-163 , (2010)

Independent Measurement of SET Pulse Widths From N-Hits and P-Hits in 65-nm CMOS. Jagannathan, S; Gadlage, MJ; Bhuva, BL; Schrimpf, RD; Narasimham, B; Chetia, J; Ahlbin, JR; Massengill, LW, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 57, 3386-3391 , (2010)

Layout-Related Stress Effects on Radiation-Induced Leakage Current. Rezzak, N; Schrimpf, RD; Alles, ML; Zhang, EX; Fleetwood, DM; Li, YA, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 57, 3288-3292 , (2010)

Mobility Modeling Considerations for Radiation Effects Simulations in Silicon. Cummings, DJ; Witulski, AF; Park, H; Schrimpf, RD; Thompson, SE; Law, ME, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 57, 2318-2326 , (2010)

Monte Carlo Simulation of Single Event Effects. Weller, RA; Mendenhall, MH; Reed, RA; Schrimpf, RD; Warren, KM; Sierawski, BD; Massengill, LW, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 57, 1726-1746 , (2010)

Monte Carlo Simulations to Evaluate the Contribution of Si Bulk, Interconnects, and Packaging to Alpha-Soft Error Rates in Advanced Technologies. Gedion, M; Wrobel, F; Saigne, F; Schrimpf, RD; Mekki, J, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 57, 3121-3126 , (2010)

Muon-Induced Single Event Upsets in Deep-Submicron Technology. Sierawski, BD; Mendenhall, MH; Reed, RA; Clemens, MA; Weller, RA; Schrimpf, RD; Blackmore, EW; Trinczek, M; Hitti, B; Pellish, JA; Baumann, RC; Wen, SJ; Wong, R; Tam, N, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 57, 3273-3278 , (2010)

Novel Energy-Dependent Effects Revealed in GeV Heavy-Ion-Induced Transient Measurements of Antimony-Based III-V HEMTs. McMorrow, D; Warner, J; DasGupta, S; Ramachandran, V; Boos, JB; Reed, R; Schrimpf, R; Paillet, P; Ferlet-Cavrois, V; Baggio, J; Buchner, S; El-Mamouni, F; Raine, M; Duhamel, O, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 57, 3358-3365 , (2010)

Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling. Pantelides, ST; Tsetseris, L; Beck, MJ; Rashkeev, SN; Hadjisavvas, G; Batyrev, IG; Tuttle, BR; Marinopoulos, AG; Zhou, XJ; Fleetwood, DM; Schrimpf, RD, SOLID-STATE ELECTRONICS, 54, 841-848 , (2010)

Process and Contamination Effects on the Single-Event Response of AlSb/InAs HEMTs. DasGupta, S; McMorrow, D; Reed, RA; Schrimpf, RD; Boos, JB; Ramachandran, V, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 57, 3262-3266 , (2010)

Process Dependence of Proton-Induced Degradation in GaN HEMTs. Roy, T; Zhang, EX; Puzyrev, YS; Fleetwood, DM; Schrimpf, RD; Choi, BK; Hmelo, AB; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 57, 3060-3065 , (2010)

Recoverable degradation in InAs/AlSb high-electron mobility transistors: The role of hot carriers and metastable defects in AlSb. Shen, X; DasGupta, S; Reed, RA; Schrimpf, RD; Fleetwood, DM; Pantelides, ST, JOURNAL OF APPLIED PHYSICS, 108, 114505 , (2010)

Response of a 0.25 mu m thin-film silicon-on-sapphire CMOS technology to total ionizing dose. King, MP; Gong, D; Liu, C; Liu, T; Xiang, AC; Ye, J; Schrimpf, RD; Reed, RA; Alles, ML; Fleetwood, DM, JOURNAL OF INSTRUMENTATION, 5, C11021 , (2010)

Scaling Trends in SET Pulse Widths in Sub-100 nm Bulk CMOS Processes. Gadlage, MJ; Ahlbin, JR; Narasimham, B; Bhuva, BL; Massengill, LW; Reed, RA; Schrimpf, RD; Vizkelethy, G, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 57, 3336-3341 , (2010)

Selection of Well Contact Densities for Latchup-Immune Minimal-Area ICs. Dodds, NA; Hutson, JM; Pellish, JA; Reed, RA; Kim, HS; Berg, MD; Friendlich, MR; Phan, AM; Seidleck, CM; Xapsos, MA; Deng, X; Baumann, RC; Schrimpf, RD; King, MP; Massengill, LW; Weller, RA, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 57, 3575-3581 , (2010)

The Impact of Delta-Rays on Single-Event Upsets in Highly Scaled SOI SRAMs. King, MP; Reed, RA; Weller, RA; Mendenhall, MH; Schrimpf, RD; Alles, ML; Auden, EC; Armstrong, SE; Asai, M, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 57, 3169-3175 , (2010)

Theory of hot-carrier-induced phenomena in GaN high-electron-mobility transistors. Puzyrev, YS; Tuttle, BR; Schrimpf, RD; Fleetwood, DM; Pantelides, ST, APPLIED PHYSICS LETTERS, 96, 053505 , (2010)

Total Dose Effects on the Performance of Irradiated Capacitorless MSDRAM Cells. El-Mamouni, F; Bawedin, M; Zhang, EX; Schrimpf, RD; Fleetwood, DM; Cristoloveanu, S, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 57, 3054-3059 , (2010)

Total Ionizing Dose Effects on FinFET-Based Capacitor-Less 1T-DRAMs. Zhang, EX; Fleetwood, DM; El-Mamouni, F; Alles, ML; Schrimpf, RD; Xiong, WZ; Hobbs, C; Akarvardar, K; Cristoloveanu, S, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 57, 3298-3304 , (2010)

Two-Dimensional Markov Chain Analysis of Radiation-Induced Soft Errors in Subthreshold Nanoscale CMOS Devices. Jannaty, P; Sabou, FC; Gadlage, M; Bahar, RI; Mundy, J; Patterson, W; Reed, RA; Weller, RA; Schrimpf, RD; Zaslavsky, A, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 57, 3768-3774 , (2010)

Characterization of Neutron- and Alpha-Particle-Induced Transients Leading to Soft Errors in 90-nm CMOS Technology. Narasimham, B; Gadlage, MJ; Bhuva, BL; Schrimpf, RD; Massengill, LW; Holman, WT; Witulski, AF; Reed, RA; Weller, RA; Zhu, XW, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 9, 325-333 , (2009)

Charge Generation by Secondary Particles From Nuclear Reactions in BEOL Materials. Dodds, NA; Reed, RA; Mendenhall, MH; Weller, RA; Clemens, MA; Dodd, PE; Shaneyfelt, MR; Vizkelethy, G; Schwank, JR; Ferlet-Cavrois, V; Adams, JH; Schrimpf, RD; King, MP, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56, 3172-3179 , (2009)

Charge Trapping Properties of 3C-and 4H-SiC MOS Capacitors With Nitrided Gate Oxides. Arora, R; Rozen, J; Fleetwood, DM; Galloway, KF; Zhang, CX; Han, JS; Dimitrijev, S; Kong, F; Feldman, LC; Pantelides, ST; Schrimpf, RD, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56, 3185-3191 , (2009)

Design Considerations for CdTe Nanotetrapods as Electronic Devices. Teich-McGoldrick, SL; Bellanger, M; Caussanel, M; Tsetseris, L; Pantelides, ST; Glotzer, SC; Schrimpf, RD, NANO LETTERS, 9, 3683-3688 , (2009)

Effects of Surrounding Materials on Proton-Induced Energy Deposition in Large Silicon Diode Arrays. Howe, CL; Weller, RA; Reed, RA; Sierawski, BD; Marshall, PW; Marshall, CJ; Mendenhall, MH; Schrimpf, RD; Hubbs, JE, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56, 2167-2170 , (2009)

ELDRS in Bipolar Linear Circuits: A Review. Pease, RL; Schrimpf, RD; Fleetwood, DM, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56, 1894-1908 , (2009)

Evidence for Lateral Angle Effect on Single-Event Latchup in 65 nm SRAMs. Hutson, JM; Pellish, JA; Tipton, AD; Boselli, G; Xapsos, MA; Kim, H; Friendlich, M; Campola, M; Seidleck, S; LaBel, K; Marshall, A; Deng, X; Baumann, R; Reed, RA; Schrimpf, RD; Weller, RA; Massengill, LW, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56, 208-213 , (2009)

Fin-Width Dependence of Ionizing Radiation-Induced Subthreshold-Swing Degradation in 100-nm-Gate-Length FinFETs. El Mamouni, F; Zhang, EX; Schrimpf, RD; Fleetwood, DM; Reed, RA; Cristoloveanu, S; Xiong, WZ, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56, 3250-3255 , (2009)

General Framework for Single Event Effects Rate Prediction in Microelectronics. Weller, RA; Reed, RA; Warren, KM; Mendenhall, MH; Sierawski, BD; Schrimpf, RD; Massengill, LW, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56, 3098-3108 , (2009)

Heavy Ion Microbeam- and Broadbeam-Induced Transients in SiGe HBTs. Pellish, JA; Reed, RA; McMorrow, D; Vizkelethy, G; Cavrois, VF; Baggio, J; Paillet, P; Duhamel, O; Moen, KA; Phillips, SD; Diestelhorst, RM; Cressler, JD; Sutton, AK; Raman, A; Turowski, M; Dodd, PE; Alles, ML; Schrimpf, RD; Marshall, PW; LaBel, KA, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56, 3078-3084 , (2009)

Heavy Ion Testing and Single Event Upset Rate Prediction Considerations for a DICE Flip-Flop. Warren, KM; Sternberg, AL; Black, JD; Weller, RA; Reed, RA; Mendenhall, MH; Schrimpf, RD; Massengill, LW, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56, 3130-3137 , (2009)

Heavy-Ion-Induced Digital Single Event Transients in a 180 nm Fully Depleted SOI Process. Gadlage, MJ; Gouker, P; Bhuva, BL; Narasimham, B; Schrimpf, RD, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56, 3483-3488 , (2009)

Impact of Low-Energy Proton Induced Upsets on Test Methods and Rate Predictions. Sierawski, BD; Pellish, JA; Reed, RA; Schrimpf, RD; Warren, KM; Weller, RA; Mendenhall, MH; Black, JD; Tipton, AD; Xapsos, MA; Baumann, RC; Deng, XW; Campola, MJ; Friendlich, MR; Kim, HS; Phan, AM; Seidleck, CM, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56, 3085-3092 , (2009)

Impact of Proton Irradiation-Induced Bulk Defects on Gate-Lag in GaN HEMTs. Kalavagunta, A; Silvestri, M; Beck, MJ; Dixit, SK; Schrimpf, RD; Reed, RA; Fleetwood, DM; Shen, L; Mishra, UK, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56, 3192-3195 , (2009)

Modeling the Radiation Response of Fully-Depleted SOI n-Channel MOSFETs. Esqueda, IS; Barnaby, HJ; McLain, ML; Adell, PC; Mamouni, FE; Dixit, SK; Schrimpf, RD; Xiong, W, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56, 2247-2250 , (2009)

Radioactive Nuclei Induced Soft Errors at Ground Level. Wrobel, F; Saigne, F; Gedion, M; Gasiot, J; Schrimpf, RD, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56, 3437-3441 , (2009)

Temperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI Technologies. Gadlage, MJ; Ahlbin, JR; Ramachandran, V; Gouker, P; Dinkins, CA; Bhuva, BL; Narasimham, B; Schrimpf, RD; McCurdy, MW; Alles, ML; Reed, RA; Mendenhall, MH; Massengill, LW; Shuler, RL; McMorrow, D, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56, 3115-3121 , (2009)

Temperature Stress Response of Germanium MOS Capacitors with HfO2/HfSiON Gate Dielectric. Arora, R; Fleetwood, DM; Schrimpf, RD; Galloway, KF; Schmidt, BW; Rogers, BR; Chung KB; Lucovsky, G, ECS Transactions, 19, 803-814 , (2009)

Test Circuit for Measuring Pulse Widths of Single-Event Transients Causing Soft Errors. Narasimham, B; Gadlage, MJ; Bhuva, BL; Schrimpf, RD; Massengill, LW; Holman, WT; Witulski, AF; Galloway, KF, IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 22, 119-125 , (2009)

The Effects of Aging and Hydrogen on the Radiation Response of Gated Lateral PNP Bipolar Transistors. Hughart, DR; Schrimpf, RD; Fleetwood, DM; Chen, XJ; Barnaby, HJ; Holbert, KE; Pease, RL; Platteter, DG; Tuttle, BR; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56, 3361-3366 , (2009)

The Effects of Nuclear Fragmentation Models on Single Event Effect Prediction. Clemens, MA; Dodds, NA; Weller, RA; Mendenhall, MH; Reed, RA; Schrimpf, RD; Koi, T; Wright, DH; Asai, M, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56, 3158-3164 , (2009)

The Enhanced Role of Shallow-Trench Isolation in Ionizing Radiation Damage of 65 nm RF-CMOS on SOI. Madan, A; Verma, R; Arora, R; Wilcox, EP; Cressler, JD; Marshall, PW; Schrimpf, RD; Cheng, PF; Del Castillo, LY; Liang, QQ; Freeman, G, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56, 3256-3261 , (2009)

The Role of Atomic Displacements in Ion-Induced Dielectric Breakdown. Beck, MJ; Puzyrev, YS; Sergueev, N; Varga, K; Schrimpf, RD; Fleetwood, DM; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56, 3210-3217 , (2009)

The Role of Irradiation Bias on the Time-Dependent Dielectric Breakdown of 130-nm MOSFETs Exposed to X-rays. Silvestri, M; Gerardin, S; Schrimpf, RD; Fleetwood, DM; Faccio, F; Paccagnella, A, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56, 3244-3249 , (2009)

The Use of a Dose-Rate Switching Technique to Characterize Bipolar Devices. Boch, J; Velo, YG; Saigne, F; Roche, NJH; Schrimpf, RD; Vaille, JR; Dusseau, L; Chatry, C; Lorfevre, E; Ecoffet, R; Touboul, AD, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56, 3347-3353 , (2009)

Total Ionizing Dose Effects on Ge pMOSFETs With High-k Gate Stack: On/Off Current Ratio. Kulkarni, SR; Schrimpf, RD; Galloway, KF; Arora, R; Claeys, C; Simoen, E, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56, 1926-1930 , (2009)

Use of a Contacted Buried n(+) Layer for Single Event Mitigation in 90 nm CMOS. DasGupta, S; Amusan, OA; Alles, ML; Witulski, AF; Massengill, LW; Bhuva, BL; Schrimpf, RD; Reed, RA, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56, 2008-2013 , (2009)

Assessing alpha particle-induced single event transient vulnerability in a 90-nm CMOS technology. Gadlage, MJ; Schrimpf, RD; Narasimham, B; Pellish, JA; Warren, KM; Reed, RA; Weller, RA; Bhuva, BL; Massengill, LW; Zhu, XW, IEEE ELECTRON DEVICE LETTERS, 29, 638-640 , (2008)

Atomic Displacement Effects in Single-Event Gate Rupture. Beck, MJ; Tuttle, BR; Schrimpf, RD; Fleetwood, DM; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 3025-3031 , (2008)

Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection. Black, JD; Ball, DR; Robinson, WH; Fleetwood, DM; Schrimpf, RD; Reed, RA; Black, DA; Warren, KM; Tipton, AD; Dodd, PE; Haddad, NF; Xapsos, MA; Kim, HS; Friendlich, M, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 2943-2947 , (2008)

Device-Orientation Effects on Multiple-Bit Upset in 65 nm SRAMs. Tipton, AD; Pellish, JA; Hutson, JM; Baumann, R; Deng, X; Marshall, A; Xapsos, MA; Kim, HS; Friendlich, MR; Campola, MJ; Seidleck, CM; Label, KA; Mendenhall, MH; Reed, RA; Schrimpf, RD; Weller, RA; Black, JD, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 2880-2885 , (2008)

Disorder-recrystallization effects in low-energy beam-solid interactions. Beck, MJ; Schrimpf, RD; Fleetwood, DM; Pantelides, ST, PHYSICAL REVIEW LETTERS, 100, 185502 , (2008)

Effects of guard bands and well contacts in mitigating long SETs in advanced CMOS processes. Narasimham, B; Bhuva, BL; Schrimpf, RD; Massengill, LW; Gadlage, MJ; Holman, WT; Witulski, AF; Robinson, WH; Black, JD; Benedetto, JM; Eaton, PH, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 1708-1713 , (2008)

Effects of Hydrogen on the Radiation Response of Bipolar Transistors: Experiment and Modeling. Batyrev, IG; Hughart, D; Durand, R; Bounasser, M; Tuttle, BR; Fleetwood, DM; Schrimpf, RD; Rashkeev, SN; Dunham, GW; Law, ME; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 3039-3045 , (2008)

Effects of Moisture and Hydrogen Exposure on Radiation-Induced MOS Device Degradation and Its Implications for Long-Term Aging. Schwank, JR; Shaneyfelt, MR; Dasgupta, A; Francis, SA; Zhou, XJ; Fleetwood, DM; Schrimpf, RD; Pantelides, ST; Felix, JA; Dodd, PE; Ferlet-Cavrois, V; Paillet, P; Dalton, SM; Swanson, SE; Hash, GL; Thornberg, SM; Hochrein, JM; Lum, GK, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 3206-3215 , (2008)

Electron Capture, Hydrogen Release, and Enhanced Gain Degradation in Linear Bipolar Devices. Fleetwood, DM; Schrimpf, RD; Pantelides, ST; Pease, RL; Dunham, GW, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 2986-2991 , (2008)

Electrostatic Mechanisms Responsible for Device Degradation in Proton Irradiated AlGaN/AIN/GaN HEMTs. Kalavagunta, A; Touboul, A; Shen, L; Schrimpf, RD; Reed, RA; Fleetwood, DM; Jain, RK; Mishra, UK, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 2106-2112 , (2008)

Extended SET Pulses in Sequential Circuits Leading to Increased SE Vulnerability. Narasimham, B; Amusan, OA; Bhuva, BL; Schrimpf, RD; Holman, WT, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 3077-3081 , (2008)

Gate-Length and Drain-Bias Dependence of Band-to-Band Tunneling-Induced Drain Leakage in Irradiated Fully Depleted SOI Devices. Mamouni, FE; Dixit, SK; Schrimpf, RD; Adell, PC; Esqueda, IS; McLain, ML; Barnaby, HJ; Cristoloveanu, S; Xiong, WZ, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 3259-3264 , (2008)

Increased Rate of Multiple-Bit Upset From Neutrons at Large Angles of Incidence. Tipton, AD; Zhu, XW; Weng, HX; Pellish, JA; Fleming, PR; Schrimpf, RD; Reed, RA; Weller, RA; Mendenhall, M, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 8, 565-570 , (2008)

Integrating Circuit Level Simulation and Monte-Carlo Radiation Transport Code for Single Event Upset Analysis in SEU Hardened Circuitry. Warren, KM; Stemberg, AL; Weller, RA; Baze, MP; Massengill, LW; Reed, RA; Mendenhall, MH; Schrimpf, RD, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 2886-2894 , (2008)

Laser-Induced Current Transients in Silicon-Germanium HBTs. Pellish, JA; Reed, RA; McMorrow, D; Melinger, JS; Jenkins, P; Sutton, AK; Diestelhorst, RM; Phillips, SD; Cressler, JD; Pouget, V; Pate, ND; Kozub, JA; Mendenhall, MH; Weller, RA; Schrimpf, RD; Marshall, PW; Tipton, AD; Niu, GF, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 2936-2942 , (2008)

Multi-Scale Simulation of Radiation Effects in Electronic Devices. Schrimpf, RD; Warren, KM; Ball, DR; Weller, RA; Reed, RA; Fleetwood, DM; Massengill, LW; Mendenhall, MH; Rashkeev, SN; Pantelides, ST; Alles, MA, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 1891-1902 , (2008)

Post-Irradiation Annealing Mechanisms of Defects Generated in Hydrogenated Bipolar Oxides. Chen, XJ; Barnaby, HJ; Vertneire, B; Holbert, KE; Wright, D; Pease, RL; Schrimpf, RD; Fleetwood, DM; Pantelides, ST; Shaneyfelt, MR; Adell, P, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 3032-3038 , (2008)

Quantifying the reduction in collected charge and soft errors in the presence of guard rings. Narasimham, B; Shuler, RL; Black, JD; Bhuva, BL; Schrimpf, RD; Witulski, AF; Holman, WT; Massengill, LW, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 8, 203-209 , (2008)

Radiation Effects on the 1/f Noise of Field-Oxide Field Effect Transistors. Zhou, XJ; Fleetwood, DM; Schrimpf, RD; Faccio, F; Gonella, L, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 2975-2980 , (2008)

Reactions of water molecules in silica-based network glasses. Batyrev, IG; Tuttle, B; Fleetwood, DM; Schrimpf, RD; Tsetseris, L; Pantelides, ST, PHYSICAL REVIEW LETTERS, 100, 105503 , (2008)

Single Event Mechanisms in 90 nm Triple-Well CMOS Devices. Roy, T; Witulski, AF; Schrimpf, RD; Alles, ML; Massengill, LW, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 2948-2956 , (2008)

Single event upset mechanisms for low-energy-deposition events in SiGeHBTs. Montes, EJ; Reed, RA; Pellish, JA; Alles, ML; Schrimpf, RD; Weller, RA; Varadharajaperumal, M; Niu, GF; Sutton, AK; Diestelhorst, R; Espinel, G; Krithivasan, R; Comeau, JP; Cressler, JD; Marshall, PW; Vizkelethy, G, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 1581-1586 , (2008)

Temperature-dependent second- and third-order optical nonlinear susceptibilities at the Si/SiO2 interface. Lu, X; Pasternak, R; Park, H; Qi, JB; Tolk, NH; Chatterjee, A; Schrimpf, RD; Fleetwood, DM, PHYSICAL REVIEW B, 78, 155311 , (2008)

The E ' center and oxygen vacancies in SiO2. Pantelides, ST; Lu, ZY; Nicklaw, C; Bakos, T; Rashkeev, SN; Fleetwood, DM; Schrimpf, RD, JOURNAL OF NON-CRYSTALLINE SOLIDS, 354, 217-223 , (2008)

The Role of Water in the Radiation Response of Wet and Dry Oxides. Batyrev, IG; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 2085-2089 , (2008)

Total ionizing dose effects in shallow trench isolation oxides. Faccio, F; Barnaby, HJ; Chen, XJ; Fleetwood, DM; Gonella, L; McLain, M; Schrimpf, RD, MICROELECTRONICS RELIABILITY, 48, 1000-1007 , (2008)

Total Ionizing Dose Effects on Strained HfO2-Based nMOSFETs. Park, HW; Dixit, SK; Choi, YS; Schrimpf, RD; Fleetwood, DM; Nishida, T; Thompson, SE, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 2981-2985 , (2008)

A generalized SiGe HBT single-event effects model for on-orbit event rate calculations. Pellish, JA; Reed, RA; Sutton, AK; Weller, RA; Carts, MA; Marshall, PW; Marshall, CJ; Krithivasan, R; Cressler, JD; Mendenhall, MH; Schrimpf, RD; Warren, KM; Sierawski, BD; Niu, GF, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 2322-2329 , (2007)

Application of RADSAFE to model the single event upset response of a 0.25 mu m CMOS SRAM. Warren, KM; Weller, RA; Sierawski, BD; Reed, RA; Mendenhall, MH; Schrimpf, RD; Massengill, LW; Porter, ME; Wilkinson, JD; Label, KA; Adams, JH, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 898-903 , (2007)

Applications of heavy ion microprobe for single event effects analysis. Reed, RA; Vizkelethy, G; Pellish, JA; Sierawski, B; Warren, KM; Porter, M; Wilkinson, J; Marshall, PW; Niu, G; Cressler, JD; Schrimpf, RD; Tipton, A; Weller, RA, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 261, 443-446 , (2007)

Band-to-band tunneling (BBT) induced leakage current enhancement in irradiated fully depleted SOI devices. Adell, PC; Barnaby, HJ; Schrimpf, RD; Vermeire, B, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 2174-2180 , (2007)

Characterization of digital single event transient pulse-widths in 130-nm and 90-nm CMOS technologies. Narasimham, B; Bhuva, BL; Schrimpf, RD; Massengill, LW; Gadlage, MJ; Amusan, OA; Holman, WT; Witulski, AF; Robinson, WH; Black, JD; Benedetto, JM; Eaton, PH, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 2506-2511 , (2007)

Depletion-all-around operation of the SOI four-gate transistor. Akarvardar, K; Cristoloveanu, S; Gentil, P; Schrimpf, RD; Blalock, BJ, IEEE TRANSACTIONS ON ELECTRON DEVICES, 54, 323-331 , (2007)

Distribution of proton-induced transients in silicon focal plane arrays. Howe, CL; Weller, RA; Reed, RA; Sierawski, BD; Marshall, PW; Marshall, CJ; Mendenhall, MH; Schrimpf, RD; Hubbs, JE, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 2444-2449 , (2007)

Doping-type dependence of damage in silicon diodes exposed to X-ray, proton, and He+ irradiations. Caussanel, M; Canals, A; Dixit, SK; Beck, MJ; Touboul, AD; Schrimpf, RD; Fleetwood, DM; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 1925-1930 , (2007)

Effect of voltage fluctuations on the single event transient response of deep submicron digital circuits. Gadlage, MJ; Schrimpf, RD; Narasimham, B; Bhuva, BL; Eaton, PH; Benedetto, JM, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 2495-2499 , (2007)

Effect of well and substrate potential modulation on single event pulse shape in deep submicron CMOS. DasGupta, S; Witulski, AF; Bhuva, BL; Alles, ML; Reed, RA; Amusan, OA; Ahlbin, JR; Schrimpf, RD; Massengill, LW, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 2407-2412 , (2007)

Effects of device aging on microelectronics radiation response and reliability. Fleetwood, DM; Rodgers, MP; Tsetseris, L; Zhou, XJ; Batyrev, I; Wang, S; Schrimpf, RD; Pantelides, ST, MICROELECTRONICS RELIABILITY, 47, 1075-1085 , (2007)

Engineering model of a biased metal-molecule metal junction. Caussanel, M; Schrimpf, RD; Tsetseris L; Evans, MH; Pantelides, ST, JOURNAL OF COMPUTER ELECTRONICS, 6, 425-430 , (2007)

Enhanced TID susceptibility in sub-100 nm bulk CMOS I/O transistors and circuits. McLain, M; Bamaby, HJ; Holbert, KE; Schrimpf, RD; Shah, H; Amort, A; Baze, M; Wert, J, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 2210-2217 , (2007)

Evidence of radiation-induced dopant neutralization in partially-depleted SOINMOSFETs. Akarvardar, K; Schrimpf, RD; Fleetwood, DM; Cristoloveanu, S; Gentil, P; Blalock, BJ, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 1920-1924 , (2007)

Hydrogen effects in MOS devices. Tsetseris, L; Fleetwood, DM; Schrimpf, RD; Zhou, XJ; Batyrev, IG; Pantelides, ST, MICROELECTRONIC ENGINEERING, 84, 2344-2349 , (2007)

Hydrogen in MOSFETs - A primary agent of reliability issues. Pantelides, ST; Tsetseris, L; Rashkeev, SN; Zhou, XJ; Fleetwood, DM; Schrimpf, RD, MICROELECTRONICS RELIABILITY, 47, 903-911 , (2007)

Hydrogen shuttling near Hf-defect complexes in Si/SiO2/HfO2 structures. Marinopoulos, AG; Batyrev, I; Zhou, XJ; Schrimpf, RD; Fleetwood, DM; Pantelides, ST, APPLIED PHYSICS LETTERS, 91, 233503 , (2007)

Hydrogen-related instabilities in MOS devices under bias temperature stress. Tsetseris, L; Zhou, XJ; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 7, 502-508 , (2007)

Impact of heavy ion energy and nuclear interactions on single-event upset and latchup in integrated circuits. Dodd, PE; Schwank, JR; Shaneyfelt, MR; Felix, JA; Paillet, P; Ferlet-Cavrois, V; Baggio, J; Reed, RA; Warren, KM; Weller, RA; Schrimpf, RD; Hash, GL; Dalton, SM; Hirose, K; Saito, H, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 2303-2311 , (2007)

Impact of ion energy and species on single event effects analysis. Reed, RA; Weller, RA; Mendenhall, MH; Lauenstein, JM; Warren, KM; Pellish, JA; Schrimpf, RD; Sierawski, BD; Massengill, LW; Dodd, PE; Shaneyfelt, MR; Felix, JA; Schwank, JR; Haddad, NF; Lawrence, RK; Bowman, JH; Conde, R, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 2312-2321 , (2007)

Impact of total ionizing dose on the analog single event transient sensitivity of a linear bipolar integrated circuit. Bernard, MF; Dusseau, L; Buchner, S; McMorrow, D; Ecoffet, R; Boch, J; Vaille, JR; Schrimpf, RD; LaBel, K, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 2534-2540 , (2007)

Monte-Carlo based on-orbit single event upset rate prediction for a radiation hardened by design latch. Warren, KM; Sierawski, BD; Reed, RA; Weller, RA; Carmichael, C; Lesea, A; Mendenhall, MH; Dodd, PE; Schrimpf, RD; Massengill, LW; Hoang, T; Wan, H; De Jong, JL; Padovani, R; Fabula, JJ, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 2419-2425 , (2007)

Oxide interface studies using second harmonic generation. Tolk, NH; Alles, ML; Pasternak, R; Lu, X; Schrimpf, RD; Fleetwood, DM; Dolan, RP; Standley, RW, MICROELECTRONIC ENGINEERING, 84, 2089-2092 , (2007)

Physical mechanisms of single-event effects in advanced microelectronics. Schrimpf, RD; Weller, RA; Mendenhall, MH; Reed, RA; Massengill, LW, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 261, 1133-1136 , (2007)

Predicting thermal neutron-induced soft errors in static memories using TCAD and physics-based Monte Carlo simulation tools. Warren, KM; Sierawski, BD; Weller, RA; Reed, RA; Mendenhall, MH; Pellish, JA; Schrimpf, RD; Massengill, LW; Porter, ME; Wilkinson, JD, IEEE ELECTRON DEVICE LETTERS, 28, 180-182 , (2007)

Quantum mechanical description of displacement damage formation. Beck, MJ; Hatcher, R; Schrimpf, RD; Fleetwood, DM; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 1906-1912 , (2007)

Radiation induced charge trapping in ultrathin HfO2-based MOSFETs. Dixit, SK; Zhou, XJ; Schrimpf, RD; Fleetwood, DM; Pantelide, ST; Choi, R; Bersuker, G; Feldman, LC, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 1883-1890 , (2007)

Second harmonic generation for noninvasive metrology of silicon-on-insulator wafers. Alles, ML; Pasternak, R; Lu, X; Tolk, NH; Schrimpf, RD; Fleetwood, DM; Dolan, RP; Standley, RW, IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 20, 107-113 , (2007)

The application of RHBD to n-MOSFETs intended for use in cryogenic-temperature radiation environments. Jun, B; Sutton, AK; Diestelhorst, RM; Duperon, GJ; Cressler, JD; Black, JD; Haeffner, T; Reed, RA; Alles, ML; Schrimpf, RD; Fleetwood, DM; Marshall, PW, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 2100-2105 , (2007)

The effects of angle of incidence and temperature on latchup in 65 nm technology. Hutson, JM; Pellish, JD; Boselli, G; Baumann, R; Reed, RA; Schrimpf, RD; Weller, RA; Massengill, LW, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 2541-2546 , (2007)

The effects of proton and x-ray irradiation on the DC and AC performance of complementary (npn+pnp) SiGeHBTs on thick-film SOI. Bellini, M; Jun, B; Sutton, AK; Appaswamy, AC; Cheng, P; Cressler, JD; Marshall, PW; Schrimpf, RD; Fleetwood, DM; El-Kareh, B; Balster, S; Steinmann, P; Yasuda, H, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 2245-2250 , (2007)

The effects of X-ray and proton irradiation on a 200 GHz/90 GHz complementary (npn+pnp) SiGe : C HBT technology. Diestelhorst, RM; Finn, S; Jun, B; Sutton, AK; Cheng, P; Marshall, PW; Cressler, JD; Schrimpf, RD; Fleetwood, DM; Gustat, H; Heinemann, B; Fischer, GG; Knoll, D; Tillack, B, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 2190-2195 , (2007)

The radiation tolerance of strained Si/SiGe n-MODFETs. Madan, A; Jun, B; Diestelhorst, RM; Appaswamy, A; Cressler, JD; Schrimpf, RD; Fleetwood, DM; Marshall, PW; Isaacs-Smith, T; Williams, JR; Koester, SJ, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 2251-2256 , (2007)

Total dose and bias temperature stress effects for HfSiON on Si MOS capacitors. Chen, DK; Mamouni, EE; Zhou, XJ; Schrimpf, RD; Fleetwood, DM; Galloway, KF; Lee, S; Seo, H; Lucovsky, G; Jun, B; Cressler, JD, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 1931-1937 , (2007)

Total dose and single event transients in linear voltage regulators. Kelly, AT; Adell, PC; Witulski, AR; Holman, WT; Schrimpf, RD; Pouget, V, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 1327-1334 , (2007)

Total dose response of ge MOS capacitors with HfO2/Dy2O3 gate stacks. Chen, DK; Schrimpf, RD; Fleetwood, DM; Galloway, KF; Pantelides, ST; Dimoulas, A; Mavrou, G; Sotiropoulos, A; Panayiotatos, Y, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 971-974 , (2007)

Understanding radiation- and hot carrier-induced damage processes in SiGeHBTs using mixed-mode electrical stress. Cheng, P; Jun, B; Sutton, A; Appaswamy, A; Zhu, CD; Cressler, JD; Schrimpf, RD; Fleetwood, DM, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 1938-1945 , (2007)

Temperature-dependence of off-state drain leakage in x-ray irradiated 130 nm CMOS devices

. Jun, BG; Diestelhorst, RM; Bellini, M; Espinel, G; Appaswamy, A; Prakash, APG; Cressley, JD; Chen, DK; Schrimpf, RD; Fleetwood, DM; Turowski, M; Raman, A, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 53, 3203-3209 , (2006)

An investigation of dose rate and source dependent effects in 200 GHz SiGe HBTs. Shutton, AK; Prakash, APG; Jun, BG; Zhao, EH; Bellini, M; Pellish, J; Diestelhorst, RM; Carts, MA; Phan, A; Ladbury, R; Cressley, JD; Marshall, PW; Marshall, CJ; Reed, RA; Schrimpf, RD; Fleetwood, DM, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 53, 3166-3174 , (2006)

Atomic-scale mechanisms for low-NIEL dopant-type dependent damage in Si. Beck, MJ; Tsetseris, L; Caussanel, M; Schrimpf, RD; Fleetwood, DM; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 53, 3621-3628 , (2006)

Differences between charge trapping states in irradiated nano-crystalline HfO2 and non-crystalline Hf silicates. Lucovsky, G; Fleetwood, DM; Lee, S; Seo, H; Schrimpf, RD; Felix, JA; Luning, J; Fleming, LB; Ulrich, M; Aspnes, DE, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 53, 3644-3648 , (2006)

Effects of switched-bias annealing on charge trapping in HfO2 gate dielectrics. Zhou, XJ; Fleetwood, DM; Tsetseris, L; Schrimpf, RD; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 53, 3636-3643 , (2006)

Effects of water on the aging and radiation response of MOS devices. Batyrev, IG; Rodgers, MP; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 53, 3629-3635 , (2006)

Modeling total-dose effects for a low-dropout voltage regulator. Ramachandran, V; Narasimham, B; Fleetwood, DM; Schrimpf, RD; Homan, WT; Witulski, AE; Pease, RL; Dunham, GW; Seiler, JE; Platteter, DG, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 53, 3223-3231 , (2006)

Nature of interface defect buildup in gated bipolar devices under low rate irradiation. Chen, XJ; Barnaby, HJ; Schrimpf, RD; Fleetwood, DM; Pease, RL; Platteter, DG; Dunham, GW, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 53, 3649-3654 , (2006)

Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs. Pantelides, ST; Wang, S; Franceschetti, A; Buczko, R; Di Ventra, M; Rashkeev, SN; Tsetseris, L; Evans, MH; Batyrev, IG; Feldman, LC; Dhar, S; McDonald, K; Weller, RA; Schrimpf, RD; Fleetwood, DM; Zhou, XJ; Williams, JR; Tin, CC; Chung, GY; Isaacs-Smith, T; Wang, SR; Pennycook, SJ; Duscher, G; Van Benthem, K; Porter, LM, CHALLENGES AND ADVANCES, MATERIALS SCIENCE FORUM: SiC AND RELATED MATERIALS 2005, eds. R.P. Devaty, D.J. Larkin and S.E. Saddow, 527-529, 935-948 , (2006)

Silicon carbide and related materials 2005. Pantelides, ST; Wang, S; Franceschetti, A; Buczko, R; Di Ventra, M; Rashkeev, S; Feldman, LC; Dhar, S; McDonald, K; Weller, RA; Schrimpf, RD; Fleetwood, DM; Zhou, XJ; Williams, JR; Tin, CC; Chung, GY; Isaacs-Smith; Wang, SR; Pennycook, SJ; Duscher, G; Van Benthem, K; Porter, LM, MATERIALS SCIENCE FORUM, 935, , (2006)

Single event burnout in power diodes: Mechanisms and models. Albadri, AM; Schrimpf, RD; Galloway, KF; Walker, DG, MICROELECTRONICS RELIABILITY, 46, 317-325 , (2006)

Studies of charge carrier trapping and recombination processes in Si/SiO2/MgO structures using second-harmonic generation. White, YV; Lu, X; Pasternak, R; Tolk, NH; Chatterjee, A; Schrimpf, RD; Fleetwood, DM; Ueda, A; Mu, R, APPLIED PHYSICS LETTERS, 88, 062102 , (2006)

Total dose radiation response of nitrided and non-nitrided SiO2/4H-SiC MOS capacitors. Dixit, SK; Dhar, S; Rozen, J; Wang, SW; Schrimpf, RD; Fleetwood, DM; Pantelides, ST; Williams, JR; Feldman, LC, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 53, 3687-3692 , (2006)

X-ray irradiation and bias effects in fully-depleted and partially-depleted SiGeHBTs fabricated on CMOs-compatible SOI. Bellini, M; Jun, BB; Chen, TB; Cressler, JD; Marshall, PW; Chen, DK; Schrimpf, RD; Fleetwood, DM; Cai, J, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 53, 3182-3186 , (2006)

Common origin for enhanced low-dose-rate sensitivity and bias temperature instability under negative bias. Tsetseris, L; Schrimpf, RD; Fleetwood, DM; Pease, RL; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 52, 2265-2271 , (2005)

Physical mechanisms of negative-bias temperature instability. Tsetseris, L; Zhou, XJ; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, APPLIED PHYSICS LETTERS, 86, 142103 , (2005)

Proton-induced damage in gallium nitride-based Schottky diodes. Karmarkar, AP; White, BD; Buttari, D; Fleetwood, DM; Schrimpf, RD; Weller, RA; Brillson, LJ; Mishra, UK, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 52, 2239-2244 , (2005)

Single event transient effects in a voltage reference. Adell, PC; Schrimpf, RD; Cirba, CR; Holman, WT; Zhu, X; Barnaby, HJ; Mion, O, MICROELECTRONICS RELIABILITY, 45, 355-359 , (2005)

Single event transient propagation through digital optocouplers. Adell, PC; Mion, O; Schrimpf, RD; Chatry, C; Calvel, P; Melotte, MR, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 52, 1136-1139 , (2005)

The effects of aging on MOS irradiation and annealing response. Rodgers, MP; Fleetwood, DM; Schrimpf, RD; Batyrev, IG; Wang, S; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 52, 2642-2648 , (2005)

The impact of mechanical stress on the total-dose response of linear bipolar transistors with various passivation layers. Cizmarik, RR; Schrimpf, RD; Fleetwood, DM; Galloway, KF; Platteter, DG; Shaneyfelt, MR; Pease, RL; Boch, J; Ball, DR; Rowe, JD; Maher, MC, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 52, 1513-1517 , (2005)

Characterization of enhanved low dose rate sensitivity (ELDRS) effects using gated lateral PNP transistor structures. Pease, RL; Platteter, DG; Dunham, GW; Seiler, JE; Barnaby, HJ; Schrimpf, RD; Shaneyfelt, MR; Maher, MC; Nowlin, RN, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 51, 3773-3780 , (2004)

Characterization of multiple Si/SiO2 interfaces in silicon-on-insulator materials via second-harmonic generation. Jun, B; White, YV; Schrimpf, RD; Fleetwood, DM; Brunier, F; Bresson, N; Cristoloveanu, S; Tolk, NH, APPLIED PHYSICS LETTERS, 85, 3095-3097 , (2004)

Charge trapping and low frequency noise in SOI buried oxides. Xiong, HD; Jun, B; Fleetwood, DM; Schrimpf, RD; Schwank, JR, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 51, 3238-3242 , (2004)

Charge trapping in irradiated SOI wafers measured by second harmonic generation. Jun, B; Schrimpf, RD; Fleetwood, DA; White, YV; Pasternak, R; Rashkeev, SN; Brunier, F; Bresson, N; Fouillat, M; Cristoloveanu, S; Tolk, NH, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 51, 3231-3237 , (2004)

CVD diamond photoconductive devices. Choi, BK; Kang, WP; Davidson, JL; Howell, M; Schrimpf, RD; Fleetwood, DM, DIAMOND AND RELATED MATERIALS, 13, 785-790 , (2004)

Design considersations for optical systems in ionizing and nonionizing radiation environments. Kalavagunta, A; Schrimpf, R; Niefeld, M, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 51, 3595-3602 , (2004)

Dual role of fluorine at the Si-SiO2 interface. Tsetseris, L; Zhou, XJ; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, APPLIED PHYSICS LETTERS, 85, 4950-4952 , (2004)

Effect of switching from high to low dose rate on linear bipolar technology radiation response. Boch, J; Saigne, F; Schrimpf, RD; Fleetwood, DM; Ducret, S; Dusseau, L; David, JP; Fesquet, J; Gasiot, J; Ecoffet, R, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 51, 2896-2902 , (2004)

Effect of thermal annealing on radiation-induced degradation of bipolar technologies when the dose rate is switched from high to low. Ducret, S; Saigne, F; Boch, J; Schrimpf, RD; Fleetwood, DA; Vaille, JR; Dusseau, L; David, JP; Ecoffet, R, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 51, 3219-3224 , (2004)

Effects of hydrogen motion on interface trap formation and annealing. Rashkeev, SN; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 51, 3158-3165 , (2004)

Electrical and radiation assisted passivation of Ta2O5/Si interface. Hutson, JM; Devine, RAB; Schrimpf, RD, JOURNAL OF APPLIED PHYSICS, 95, 8463-8465 , (2004)

Elevated temperature irradiation at high dose rate of commercial linear bipolar ICs. Boch, J; Saigne, R; Schrimpf, RD; Fleetwood, DM; Cizmarik, R; Zander, D, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 51, 2903-2907 , (2004)

Gain degradation and enhanced low-dose-rate sensitivity in bipolar junction transistors. Schrimpf, RD, INTERNATIONAL JOURNAL OF HIGH SPEED ELECTRONICS AND SYSTEMS, 14, 503-517 , (2004)

High-speed light modulation in avalanche breakdown modefor Si diodes. Chatterjee, A; Bhuva, B; Schrimpf, RD, IEEE DEVICE LETTERS, 25, 628-630 , (2004)

Hole-enhanced reactions of water at the Si-SiO2 interface. Tsetseris, L; Zhou, XJ; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, MATERIALS RESEARCH SOCIETY PROCEEDINGS, 786, 171 , (2004)

Hydrogen at the Si/SiO2 Interface: From Atomic-Scale Calculations to Engineering Models. Rashkeev, SN; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, INTERNATIONAL JOURNAL OF HIGH SPEED ELECTRONICS AND SYSTEMS, 14, 575-580 , (2004)

Influence of total-dose radiation on the electrical characteristics of SOI MOSFETs. Felix, JA; Schwank, JR; Cirba, CR; Schrimpf, RD; Shaneyfelt, MR; Fleetwood, DM; Dodd, PE, MICROELECTRONIC ENGINEERING, 72, 332-341 , (2004)

Interface trapping properties of nMOSFETs with Al2O3/SiOxNy/Si(100) gate dielectric stacks after exposure to ionizing radiation. Felix, JA; Xiong, HD; Fleetwood, DM; Gusev, EP; Schrimpf, RD; Sternberg, AL; D'Emic, C, MICROELECTRONIC ENGINEERING, 72, 50-54 , (2004)

Negative bias-temperature instabilities in metal-oxide-silicon devices with SiO2 and SiOxNy/HfO2 gate dielectrics. Zhou, XJ; Tsetseris, L; Rashkeev, SN; Fleetwood, DM; Schrimpf, RD; Pantelides, ST; Felix, JA; Gusev, EP; D'Emic, C, APPLIED PHYSICS LETTERS, 84, 4394-4396 , (2004)

Nonuniform total-dose-induced charge distribution in shallow-tranch isolation oxides. Turowski, M; Raman, A; Schrimpf, RD, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 51, 3166-3171 , (2004)

Proton irradiation effects on GaN-based high electron-mobility transistors with Si-doped AlxGa1-xN and thick GaN cap layers. Kannarkar, AP; Jun, BG; Fleetwood, DA; Schrimpf, RD; Weller, RA; White, BD; Brillson, LJ; Mishra, UK, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 51, 3801-3806 , (2004)

Radiation-induced base current broadening mechanisms in gated bipolar devices. Chen, XJ; Barnaby, HJ; Pease, RL; Schrimpf, RD; Platteter, DG; Dunham G, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 51, 3178-3185 , (2004)

Single event transient pulsewidths in digital microcircuits. Gadlage, MJ; Schrimpf, RD; Benedetto, JM; Eaton, PH; Mavis, DG; Sibley, M; Avery, K; Turflinger, TL, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 51, 3285-3290 , (2004)

Spatial and temporal characteristics of energy deposition by protons and alpha particles in silicon. Kobayashi, AS; Sternberg, AL; Massengill, LW; Schrimpf, RD; Weller, RA, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 51, 3312-3317 , (2004)

System-level design hardening based on worst case ASET simulations. Boulghassoul, Y; Adell, PC; Rowe, JD; Massengill, LW; Schrimpf, RD; Sternberg, AL, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 51, 2787-2793 , (2004)

The Effects of Space Radiation on ower MOSFETs: A Review. Shenai, K; Galloway, KF; SCHRIMPF, RD, INTERNATIONAL JOURNAL OF HIGH SPEED ELECTRONICS AND SYSTEMS, 14, 445-463 , (2004)

The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors. Hu, XW; Choi, BK; Barnaby, HJ; Fleetwood, DM; Schrimpf, RD; Lee, SC; Shojah-Ardalan, S; Wilkins, R; Mishra, UK; Dettmer, RW, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 51, 293-297 , (2004)

Total dose effects in a linear voltage regulator. Adell, PC; Schrimpf, RD; Holman, WT; Todd, JL; Caveriviere, RR; Galloway, KF, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 51, 3816-3821 , (2004)

Total dose effects on bipolar integrated circuits: Characterization of the saturation region. Boch, J; Saigne, F; Ducret, S; Schrimpf, RD; Fleetwood, DM; Iacconi, P; Dusseau, L, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 51, 3225-3230 , (2004)

Total dose effects on double gate fully depleted SOI MOSFETs. Jun, BG; Xiong, HD; Sternberg, AL; Cirba, CR; Chen, DK; Schrimpf, RD; Fleetwood, DM; Schwank, JR; Cristoloveanu, S, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 51, 3767-3772 , (2004)

Using surface charge analysis to characterize the radiation response of Si/SiO2 structures. Stacey, JW; Schrimpf, RD; Fleetwood, DM; Holmes, KC, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 51, 3686-3691 , (2004)

A model of radiation effects in nitride-oxide films for power MOSFET applications. Raparla, VAK; Lee, SC; Schrimpf, RD; Fleetwood, DM; Galloway, KF, SOLID-STATE ELECTRONICS, 47, 775-783 , (2003)

Charge separation techniques for irradiated pseudo-MOS SOI transistors. Jun, B; Fleetwood, DM; Schrimpf, RD; Zhou, X; Montes, EJ; Cristoloveanu, S, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 50, 1891-1895 , (2003)

Contactless ultra-fast laser probing of radiation-induced leakage current in ultra-thin oxides. Pasternak, R; Chatterjee, A; Shirokaya, YV; Choi, BK; Marka, Z; Miller, JK; Albridge, RG; Rashkeev, SN; Pantelides, ST; Schrimpf, RD; Fleetwood, DM; Tolk, NH, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 50, 1929-1933 , (2003)

Effects of 2 MeV proton irradiation on operating wavelength and leakage current of vertical cavity surface emitting lasers. Kalavagunta, A; Choi, B; Neifeld, MA; Schrimpf, R, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 50, 1982-1990 , (2003)

Electrical, spectral, and chemical properties of 1.8 MeV proton irradiated AlGaN/GaN HEMT structures as a function of proton fluence. White, BD; Bataiev, M; Goss, SH; Hu, X; Karmarkar, A; Fleetwood, DM; Schrimpf, RD; Schaff, WJ; Brillson, LJ, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 50, 1934-1941 , (2003)

Evaluating average and atypical response in radiation effects simulations. Weller, RA; Sternberg, AL; Massengill, LW; Schrimpf, RD; Fleetwood, DM, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 50, 2265-2271 , (2003)

Impact of mechanical stress on total-dose effects in bipolar ICs. Boch, J; Fleetwood, DM; Schrimpf, RD; Cizmarik, RR; Saigne, F, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 50, 2335-2340 , (2003)

Laser detection of radiation enhanced electron transport in ultra-thin oxides. Pasternak, R; Shirokaya, YV; Marka, Z; Miller, JK; Rashkeev, SN; Pantelides, ST; Tolk, NH; Choi, BK; Schrimpf, RD; Fleetwood, DM, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 514, 150-155 , (2003)

Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors. Hu, XW; Karmarkar, AP; Jun, B; Fleetwood, DM; Schrimpf, RD; Geil, RD; Weller, RA; White, BD; Bataiev, M; Brillson, LJ; Mishra, UK, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 50, 1791-1796 , (2003)

Radiation-induced acceptor deactivation in bipolar devices: Effects of electric field. Rashkeev, SN; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, APPLIED PHYSICS LETTERS, 83, 4646-4648 , (2003)

Radiation-induced charge trapping in thin Al2O3/SiOxNy/Si(100) gate dielectric stacks. Felix, JA; Shaneyfelt, MR; Fleetwood, DM; Meisenheimer, TL; Schwank, JR; Schrimpf, RD, Dodd, PE; Guzev, EP, D'Emic, C, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 50, 1910-1918 , (2003)

Spin/carrier dynamics at semiconductor interfaces using intense, tunable, ultra-fast lasers. Jiang, Y; Pasternak, R; Marka, Z; Shirokaya, YV; Miller, JK; Rashkeev, SN; Glinka, YD; Perakis, IE; Roy, PK; Kozub, J; Choi, BK; Fleetwood, DM; Schrimpf, RD; Liu, X; Sasaki, Y; Furdyna, JK; Tolk, NH, PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 240, 490-499 , (2003)

Statistical modeling of radiation-induced proton transport in silicon: Deactivation of dopant acceptors in bipolar devices. Rashkeev, SN; Fleetwood, DA; Schrimpf, RD; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 50, 1896-1900 , (2003)

Structure, properties, and dynamics of oxygen vacancies in amorphous SiO2. Lu, ZY; Nicklaw, CJ; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, PHYSICAL REVIEW LETTERS, 91, 039901 , (2003)

Test structures for analyzing proton radiation effects in bipolar technologies. Barnaby, HJ; Schrimpf, RD; Galloway, KF; Ball, DR; Pease, RL; Fouillat, P, IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 16, 253-258 , (2003)

Total-dose and single-event effects in DC/DC converter control circuitry. Adell, PC; Schrimpf, RD; Holman, WI; Boch, J; Stacey, J; Ribero, P; Stenberg, A; Galloway, KF, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 50, 1867-1872 , (2003)

Two-color optical technique for characterization of x-ray radiation-enhanced electron transport in SiO2. Marka, Z; Pasternak, R; Albridge, RG; Rashkeev, SN; Pantelides, ST; Tolk, NH; Choi, BK; Fleetwood, DM; Schrimpf, RD, JOURNAL OF APPLIED PHYSICS, 93, 1865-1870 , (2003)

A two-dimensional engineering model for radiation-induced interface trap formation

. Barnaby, HJ; Cirba, C; Schrimpf, RD; Galloway, KF; Pagey; Milanowski, R, JOURNAL OF RADIATION EFFECTS, RESEARCH & ENGINEERING, 19, 127-133 , (2002)

Detection of trap activation by ionizing radiation in SiO2 by spatially localized cathodoluminescence spectroscopy

. White, BD; Brillson, LJ; Bataiev, M; Brillson, LJ; Fleetwood, DM; Schrimpf, RD; Choi, BK, Pantelides, ST, JOURNAL OF APPLIED PHYSICS, 92, 5729-5734 , (2002)

Analytical model for proton radiation effects in bipolar devices. Barnaby, HJ; Smith, SK; Schrimpf, RD; Fleetwood, DM; Pease, RL, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 49, 2643-2649 , (2002)

Characterization of 1.8-MeV proton-irradiated AlGaN/GaN field-effect transistor structures by nanoscale depth-resolved luminescence spectroscopy. White, BD; Bataiev, M; Brillson, LJ; Choi, BK; Fleetwood, DM; Schrimpf, RD; Pantelides, ST; Dettmer, RW; Schaff, WJ; Champlain, JG; Mishra, UK, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 49, 2695-2701 , (2002)

Dose and dose-rate effects on NPN bipolar junction transistors irradiated at high temperature. Boch, J; Saigne, F; Maurel, T; Giustino, F; Dusseau, L; Schrimpf, RD; Galloway, KF; David, JP; Ecoffet, R; Fesquet, J; Gasiot, J, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 49, 1474-1479 , (2002)

Dual behavior of H+ at Si-SiO2 interfaces: Mobility versus trapping. Rashkeev, SN; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, APPLIED PHYSICS LETTERS, 81, 1839-1841 , (2002)

Effect of amplifier parameters on single-event transients in an inverting operational amplifier. Sternberg, AL; Massengill, LW; Schrimpf, RD; Boulghassoul, Y; Barnaby, HJ; Buchner, S; Pease, RL; Howard, JW, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 49, 1496-1501 , (2002)

Evaluation of design methodology dedicated to dose-rate-hardened linear integrated circuits. Deval, Y; Lapuyade, H; Fouillat, P; Barnaby, H; Darracq, F; Briand, R; Lewis D; Schrimpf, RD, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 49, 1468-1473 , (2002)

Long-term reliability degradation of ultrathin dielectric films due to heavy-ion irradiation. Choi, BK; Fleetwood, DM; Schrimpf, RD; Massengill, LW; Galloway, KF; Shaneyfelt, MR; Meisenheimer, TL; Dodd, PE; Schwank, JR; Lee, YM; John, RS; Lucovsky, G, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 49, 3045-3050 , (2002)

Model for high-temperature radiation effects in n-p-n bipolar-junction transistors. Boch, J; Saigne, F; Mannoni, V; Giustino, F; Schrimpf, RD; Dusseau, L; Galloway, KF; Fesquet, J; Gasiot, J; Ecoffet, R, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 49, 2990-2997 , (2002)

Physical model for enhanced interface-trap formation at low dose rates. Rashkeev, SN; Cirba, CR; Fleetwood, DM; Schrimpf, RD; Witczak, SC; Michez, A; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 49, 2650-2655 , (2002)

Proton-induced degradation in AlGaAs/GaAs heterojunction bipolar transistors. Hu, XW; Choi, BK; Barnaby, HJ; Fleetwood, DM; Schrimpf, RD; Galloway, KF; Weller, RA; McDonald, K; Mishra, UK; Dettmer, RW, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 49, 3213-3216 , (2002)

Reliability degradation of ultra-thin oxynitride and Al2O3 gate dielectric films owing to heavy-ion irradiation. Choi, BK; Fleetwood, DM; Massengill, LW; Schrimpf, RD; Galloway, KF; Shaneyfelt, MR; Meisenheimer, TL; Dodd, PE; Schwank, JR; Lee, YM; Johnson, RS; Lucovsky, G, ELECTRONICS LETTERS, 38, 157-158 , (2002)

Separation of ionization and displacement damage using gate-controlled lateral PNP bipolar transistors. Ball, DR; Schrimpf, RD; Barnaby, HJ, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 49, 3185-3190 , (2002)

Structure, properties, and dynamics of oxygen vacancies in amorphous SiO2. Lu, ZY; Nicklaw, CJ; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, PHYSICAL REVIEW LETTERS, 89, 285505 , (2002)

The strcuture, properties, and dynamics of oxygen vacancies in amorphous SiO2. Nicklaw, CJ; Lu, ZY; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 49, 2667-2673 , (2002)

Total-dose and single-event effects in switching DC/DC power converters. Adell, PC; Schrimpf, RD; Choi, BK; Holman, WT; Attwood, JP; Cirba, CR; Galloway, KF, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 49, 3217-3221 , (2002)

Total-dose radiation response of hafnium-silicate capacitors. Felix, JA; Fleetwood, DM; Schrimpf, RD; Hong, JG; Lucovsky, G; Schwank, JR; Shaneyfelt, MR, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 49, 3191-3196 , (2002)

Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices. Fleetwood, DM; Xiong, HD; Lu, ZY; Nicklaw, CJ; Felix, JA; Schrimpf, RD; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 49, 2674-2683 , (2002)

A generalized model for the lifetime of microelectronic components, applied to storage conditions. Wise, LJ; Schrimpf, RD; Parks, HG; Galloway, KF, MICROELECTRONICS RELIABILITY, 41, 317-322 , (2001)

A hydrogen-transport-based interface-trap-generation model for hot-carries reliability prediction. Pagey, MP; Schrimpf, RD; Galloway, KF; Nicklaw, CJ; Ikeda, S; Komahara, S, IEEE DEVICE LETTERS, 22, 290-292 , (2001)

Aging and baking effects on the radiation hardness of MOS capacitors. Karmarkar, AP; Choi, BK; Schrimpf, RD; Fleetwood, DM, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 48, 2158-2163 , (2001)

Application determinance of single-event transient characteristics in LM111 comparator. Sternberg, AL; Massengill, LW; Schrimpf, RD; Calvel, P, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 48, 1855-1858 , (2001)

Critical charge for single-event transients (SETs) in bipolar linear circuits. Pease, RL; Stenberg, A; Massengill, L; Schrimpf, RD; Buchner, S; Savage, M; Titus, J; Turflinger, T, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 48, 1966-1972 , (2001)

Defect generation by hydrogen at the Si-SiO2 interface. Rashkeev, SN; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, PHYSICAL REVIEW LETTERS, 8716, 165506 , (2001)

Evaluation of MOS devices' total dose response using the isochronal annealing method. Saigne, F; Dusseau, L; Fesquet, J; Gasiot, J; Ecoffet, R; Schrimpf, RD; Galloway, KF, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 48, 2170-2173 , (2001)

Heavy-ion-induced breakdown in ultra-thin gate oxides and high-k dielectrics. Massengill, LW; Choi, BK; Fleetwood, DM; Schrimpf, RD; Galloway, KF; Shaneyfelt, MR; Meisenheimer, TL; Dodd, PE; Schwank, JR; Lee, YM; Johnson, RS; Lucovsky, G, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 48, 1904-1912 , (2001)

Proton radiation response mechanisms in bipolar analog circuits. Barnaby, HJ; Schrimpf, RD; Sternberg, AL; Berthe, V; Cirba, CR; Pease, RL, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 48, 2074-2080 , (2001)

Proton-induced defect generation at the Si-SiO2 interface. Rashkeev, SN; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 48, 2086-2092 , (2001)

Thermal modeling of single event burnout failure in semiconductor power devices. Walker, DG; Fisher, TS; Liu, J; Schrimpf, RD, MICROELECTRONICS RELIABILITY, 41, 571-578 , (2001)


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