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Pantelides, Sokrates T.
University Distinguished Professor of Physics and Engineering
William and Nancy McMinn Professor of Physics
Professor of Electrical Engineering

Research Information

Research interests include:theoretical physics, semiconductor physics, first principles: atomic-scale dynamics, and mesoscopic dynamics in complex solids. 


Selected Publications

1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions. Roy, T; Puzyrev, YS; Zhang, EX; DasGupta, S; Francis, SA; Fleetwood, DM; Schrimpf, RD; Mishra, UK; Speck, JS; Pantelides, ST, MICROELECTRONICS RELIABILITY, 51, 212-216 , (2011)

Atomic-Resolution Imaging of Spin-State Superlattices in Nanopockets within Cobaltite Thin Films. Gazquez, J; Luo, WD; Oxley, MP; Prange, M; Torija, MA; Sharma, M; Leighton, C; Pantelides, ST; Pennycook, SJ; Varela, M, NANO LETTERS, 11, 973-976 , (2011)

Atomic-scale origins of bias-temperature instabilities in SiC-SiO2 structures. Shen, XA; Zhang, EX; Zhang, CX; Fleetwood, DM; Schrimpf, RD; Dhar, S; Ryu, SH; Pantelides, ST, APPLIED PHYSICS LETTERS, 98, 063507 , (2011)

Defect formation and annihilation at Ge-GeO2 interfaces. Tsetseris, L; Pantelides, ST, MICROELECTRONIC ENGINEERING, 88, 395-398 , (2011)

Defect formation and hysteretic inter-tube displacement in multi-wall carbon nanotubes. Tsetseris, L; Pantelides, ST, CARBON, 49, 581-586 , (2011)

Dehydrogenation of defects and hot-electron degradation in GaN high-electron-mobility transistors. Puzyrev, YS; Roy, T; Beck, M; Tuttle, BR; Schrimpf, RD; Fleetwood, DM; Pantelides, ST, JOURNAL OF APPLIED PHYSICS, 109, 034501 , (2011)

Ge volatilization products in high-k gate dielectrics. Golias, E; Tsetseris, L; Dimoulas, A; Pantelides, ST, MICROELECTRONIC ENGINEERING, 88, 427-430 , (2011)

High electron mobility due to sodium ions in the gate oxide of SiC-metal-oxide-semiconductor field-effect transistors. Tuttle, BR; Dhar, S; Ryu, SH; Zhu, X; Williams, JR; Feldman, LC; Pantelides, ST, JOURNAL OF APPLIED PHYSICS, 109, 023702 , (2011)

Identification of a major cause of endemically poor mobilities in SiC/SiO2 structures. Shen, XA; Pantelides, ST, APPLIED PHYSICS LETTERS, 98, 053507 , (2011)

Atom-by-atom structural and chemical analysis by annular dark-field electron microscopy. Krivanek, OL; Chisholm, MF; Nicolosi, V; Pennycook, TJ; Corbin, GJ; Dellby, N; Murfitt, MF; Own, CS; Szilagyi, ZS; Oxley, MP; Pantelides, ST; Pennycook, SJ, NATURE, 464, 571-574 , (2010)

Atomic-Scale Compensation Phenomena at Polar Interfaces. Chisholm, MF; Luo, WD; Oxley, MP; Pantelides, ST; Lee, HN, PHYSICAL REVIEW LETTERS, 105, 197602 , (2010)

Atomic-scale mechanisms for diffusion of impurities in transition-metal nitrides. Tsetseris, L; Logothetidis, S; Pantelides, ST, SURFACE & COATINGS TECHNOLOGY, 204, 2089-2094 , (2010)

Configuration and conductance evolution of benzene-dithiol molecular junctions under elongation. Sergueev, N; Tsetseris, L; Varga, K; Pantelides, S, PHYSICAL REVIEW B, 82, 073106 , (2010)

Control of Octahedral Tilts and Magnetic Properties of Perovskite Oxide Heterostructures by Substrate Symmetry. He, J; Borisevich, A; Kalinin, SV; Pennycook, SJ; Pantelides, ST, PHYSICAL REVIEW LETTERS, 105, 227203 , (2010)

Crystal-induced effects at crystal/amorphous interfaces: The case of Si3N4/SiO2. Walkosz, W; Klie, RF; Ogut, S; Mikijelj, B; Pennycook, SJ; Pantelides, ST; Idrobo, JC, PHYSICAL REVIEW B, 82, 081412 , (2010)

Defect Interactions of H-2 in SiO2: Implications for ELDRS and Latent Interface Trap Buildup. Tuttle, BR; Hughart, DR; Schrimpf, RD; Fleetwood, DM; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 57, 3046-3053 , (2010)

Diffusivity Control in Molecule-on-Metal Systems Using Electric Fields. Jiang, N; Zhang, YY; Liu, Q; Cheng, ZH; Deng, ZT; Du, SX; Gao, HJ; Beck, MJ; Pantelides, ST, NANO LETTERS, 10, 1184-1188 , (2010)

Electrical-stress-induced degradation in AlGaN/GaN high electron mobility transistors grown under gallium-rich, nitrogen-rich, and ammonia-rich conditions. Roy, T; Puzyrev, YS; Tuttle, BR; Fleetwood, DM; Schrimpf, RD; Brown, DF; Mishra, UK; Pantelides, ST, APPLIED PHYSICS LETTERS, 96, 133503 , (2010)

Excess carbon in silicon carbide. Shen, X; Oxley, MP; Puzyrev, Y; Tuttle, BR; Duscher, G; Pantelides, ST, JOURNAL OF APPLIED PHYSICS, 108, 123705 , (2010)

Hydrogen-dopant interactions in SiGe and strained Si. Tsetseris, L; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, APPLIED PHYSICS LETTERS, 96, 251905 , (2010)

Mechanical and electronic properties of ferromagnetic Ga1-xMnxAs using ultrafast coherent acoustic phonons. Qi, J; Yan, JA; Park, H; Steigerwald, A; Xu, Y; Gilbert, SN; Liu, X; Furdyna, JK; Pantelides, ST; Tolk, N, PHYSICAL REVIEW B, 81, 115208 , (2010)

Optical gaps of free and embedded Si nanoclusters: Density functional theory calculations. Pennycook, TJ; Hadjisavvas, G; Idrobo, JC; Kelires, PC; Pantelides, ST, PHYSICAL REVIEW B, 82, 125310 , (2010)

Origin of bulklike optical response in noble-metal Ag and Au nanoparticles. Idrobo, JC; Pantelides, ST, PHYSICAL REVIEW B, 82, 085420 , (2010)

Origin of Colossal Ionic Conductivity in Oxide Multilayers: Interface Induced Sublattice Disorder. Pennycook, TJ; Beck, MJ; Varga, K; Varela, M; Pennycook, SJ; Pantelides, ST, PHYSICAL REVIEW LETTERS, 104, 115901 , (2010)

Oxygen and water-related impurities in C-60 crystals: A density-functional theory study. Tsetseris, L; Pantelides, ST, PHYSICAL REVIEW B, 82, 045201 , (2010)

Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling. Pantelides, ST; Tsetseris, L; Beck, MJ; Rashkeev, SN; Hadjisavvas, G; Batyrev, IG; Tuttle, BR; Marinopoulos, AG; Zhou, XJ; Fleetwood, DM; Schrimpf, RD, SOLID-STATE ELECTRONICS, 54, 841-848 , (2010)

Process Dependence of Proton-Induced Degradation in GaN HEMTs. Roy, T; Zhang, EX; Puzyrev, YS; Fleetwood, DM; Schrimpf, RD; Choi, BK; Hmelo, AB; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 57, 3060-3065 , (2010)

Recoverable degradation in InAs/AlSb high-electron mobility transistors: The role of hot carriers and metastable defects in AlSb. Shen, X; DasGupta, S; Reed, RA; Schrimpf, RD; Fleetwood, DM; Pantelides, ST, JOURNAL OF APPLIED PHYSICS, 108, 114505 , (2010)

Theory of hot-carrier-induced phenomena in GaN high-electron-mobility transistors. Puzyrev, YS; Tuttle, BR; Schrimpf, RD; Fleetwood, DM; Pantelides, ST, APPLIED PHYSICS LETTERS, 96, 053505 , (2010)

Aberration-corrected scanning transmission electron microscopy: from atomic imaging and analysis to solving energy problems. Pennycook, SJ; Chisholm, MF; Lupini, AR; Varela, M; Borisevich, AY; Oxley, MP; Luo, WD; van Benthem, K; Oh, SH; Sales, DL; Molina, SI; Garcia-Barriocanal, J; Leon, C; Santamaria, J; Rashkeev, SN; Pantelides, ST, PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 367, 3709-3733 , (2009)

Adatom complexes and self-healing mechanisms on graphene and single-wall carbon nanotubes. Tsetseris, L; Pantelides, ST, CARBON, 47, 901-908 , (2009)

Adsorbate-Induced Defect Formation and Annihilation on Graphene and Single-Walled Carbon Nanotubes. Tsetseris, L; Pantelides, ST, JOURNAL OF PHYSICAL CHEMISTRY B, 113, 941-944 , (2009)

Atomic-resolution imaging of oxidation states in manganites. Varela, M; Oxley, MP; Luo, W; Tao, J; Watanabe, M; Lupini, AR; Pantelides, ST; Pennycook, SJ, PHYSICAL REVIEW B, 79, 085117 , (2009)

Charge Trapping Properties of 3C-and 4H-SiC MOS Capacitors With Nitrided Gate Oxides. Arora, R; Rozen, J; Fleetwood, DM; Galloway, KF; Zhang, CX; Han, JS; Dimitrijev, S; Kong, F; Feldman, LC; Pantelides, ST; Schrimpf, RD, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56, 3185-3191 , (2009)

Design Considerations for CdTe Nanotetrapods as Electronic Devices. Teich-McGoldrick, SL; Bellanger, M; Caussanel, M; Tsetseris, L; Pantelides, ST; Glotzer, SC; Schrimpf, RD, NANO LETTERS, 9, 3683-3688 , (2009)

Direct Imaging of Nanoscale Phase Separation in La0.55Ca0.45MnO3: Relationship to Colossal Magnetoresistance. Tao, J; Niebieskikwiat, D; Varela, M; Luo, W; Schofield, MA; Zhu, Y; Salamon, MB; Zuo, JM; Pantelides, ST; Pennycook, SJ, PHYSICAL REVIEW LETTERS, 103, 097202 , (2009)

Electronic and crystal-field effects in the fine structure of electron energy-loss spectra of manganites. Luo, WD; Varela, M; Tao, J; Pennycook, SJ; Pantelides, ST, PHYSICAL REVIEW B, 79, 052405 , (2009)

Excitation and detection of surface acoustic phonon modes in Au/Al2O3 multilayers. Halabica, A; Pantelides, ST; Haglund, RF; Magruder, RH; Meldrum, A, PHYSICAL REVIEW B, 80, 165422 , (2009)

First-principles calculations of electron mobilities in silicon: Phonon and Coulomb scattering. Restrepo, OD; Varga, K; Pantelides, ST, APPLIED PHYSICS LETTERS, 94, 212103 , (2009)

First-principles studies on organic electronic materials. Tsetseris, L; Pantelides, ST, EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 46, 12511 , (2009)

Identification and lattice location of oxygen impurities in alpha-Si3N4. Idrobo, JC; Oxley, MP; Walkosz, W; Klie, RF; Ogut, S; Mikijelj, B; Pennycook, SJ; Pantelides, ST, APPLIED PHYSICS LETTERS, 95, 164101 , (2009)

Migration of species in a prototype diffusion barrier: Cu, O, and H in TiN. Tsetseris, L; Logothetidis, S; Pantelides, ST, APPLIED PHYSICS LETTERS, 94, 161903 , (2009)

Modification of the electronic properties of rubrene crystals by water and oxygen-related species. Tsetseris, L; Pantelides, ST, ORGANIC ELECTRONICS, 10, 333-340 , (2009)

Morphology and defect properties of the Ge-GeO2 interface. Tsetseris, L; Pantelides, ST, APPLIED PHYSICS LETTERS, 95, 262107 , (2009)

Origin of preferential sputtering in a-SiO2 during ion beam synthesis of nanocrystals. Beck, MJ; Pantelides, ST, PHYSICAL REVIEW B, 79, 033203 , (2009)

Scanning Transmission Electron Microscopy of Nanostructures. Pennycook, SJ; Varela, M; Chisholm, MF; Borisevich, AY; Lupini, AR; Bentham, K van; Oxley, MP; Luo, W; McBride, J; Rosenthal, SJ; Oh, SH; Sales, DL; Molina, SI; Sohlberg, K; Pantelides, SJ, The Oxford Handbook of Nanoscience and Technology, Vol. II - A. Narlikar and Y. Fu eds. Oxford University Press, , 205 , (2009)

Screening in Nanowires and Nanocontacts: Field Emission, Adhesion Force, and Contact Resistance. Zhang, XG; Pantelides, ST, NANO LETTERS, 9, 4306-4310 , (2009)

Standing spin waves excited optically across an indirect gap in short graphene nanoribbons. Lu, JQ; Zhang, XG; Pantelides, ST, PHYSICAL REVIEW B, 79, 073408 , (2009)

The Effects of Aging and Hydrogen on the Radiation Response of Gated Lateral PNP Bipolar Transistors. Hughart, DR; Schrimpf, RD; Fleetwood, DM; Chen, XJ; Barnaby, HJ; Holbert, KE; Pease, RL; Platteter, DG; Tuttle, BR; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56, 3361-3366 , (2009)

The Role of Atomic Displacements in Ion-Induced Dielectric Breakdown. Beck, MJ; Puzyrev, YS; Sergueev, N; Varga, K; Schrimpf, RD; Fleetwood, DM; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56, 3210-3217 , (2009)

Universal optical response of Si-Si bonds and its evolution from nanoparticles to bulk crystals. Idrobo, JC; Halabica, A; Magruder, RH; Haglund, RF; Pennycook, SJ; Pantelides, ST, PHYSICAL REVIEW B, 79, 125322 , (2009)

Vacancy-related defects and the E-delta(') center in amorphous silicon dioxide: Density functional calculations. Tuttle, BR; Pantelides, ST, PHYSICAL REVIEW B, 79, 115206 , (2009)

Atomic Displacement Effects in Single-Event Gate Rupture. Beck, MJ; Tuttle, BR; Schrimpf, RD; Fleetwood, DM; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 3025-3031 , (2008)

Comment on "Theory of Defect Levels and the 'Band Gap Problem' in Silicon". Tuttle, BR; Pantelides, ST, PHYSICAL REVIEW LETTERS, 101, 089701 , (2008)

Defect-mediated ferromagnetism in insulating Co-doped anatase TiO2 thin films. Roberts, KG; Varela, M; Rashkeev, S; Pantelides, ST; Pennycook, SJ; Krishnan, KM, PHYSICAL REVIEW B, 78, 014409 , (2008)

Disorder-recrystallization effects in low-energy beam-solid interactions. Beck, MJ; Schrimpf, RD; Fleetwood, DM; Pantelides, ST, PHYSICAL REVIEW LETTERS, 100, 185502 , (2008)

Dynamical effects in the interaction of ion beams with solids. Hatcher, R; Beck, M; Tackett, A; Pantelides, ST, PHYSICAL REVIEW LETTERS, 100, 103201 , (2008)

Effects of Hydrogen on the Radiation Response of Bipolar Transistors: Experiment and Modeling. Batyrev, IG; Hughart, D; Durand, R; Bounasser, M; Tuttle, BR; Fleetwood, DM; Schrimpf, RD; Rashkeev, SN; Dunham, GW; Law, ME; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 3039-3045 , (2008)

Effects of Moisture and Hydrogen Exposure on Radiation-Induced MOS Device Degradation and Its Implications for Long-Term Aging. Schwank, JR; Shaneyfelt, MR; Dasgupta, A; Francis, SA; Zhou, XJ; Fleetwood, DM; Schrimpf, RD; Pantelides, ST; Felix, JA; Dodd, PE; Ferlet-Cavrois, V; Paillet, P; Dalton, SM; Swanson, SE; Hash, GL; Thornberg, SM; Hochrein, JM; Lum, GK, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 3206-3215 , (2008)

Electron Capture, Hydrogen Release, and Enhanced Gain Degradation in Linear Bipolar Devices. Fleetwood, DM; Schrimpf, RD; Pantelides, ST; Pease, RL; Dunham, GW, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 2986-2991 , (2008)

Impurity segregation and ordering in Si/SiO2/HfO2 structures. Marinopoulos, AG; van Benthem, K; Rashkeev, SN; Pennycook, SJ; Pantelides, ST, PHYSICAL REVIEW B, 77, 195317 , (2008)

Increase in oxide hole trap density associated with nitrogen incorporation at the SiO2/SiC interface. Rozen, J; Dhar, S; Dixit, SK; Afanas'ev, VV; Roberts, FO; Dang, HL; Wang, S; Pantelides, ST; Williams, JR; Feldman, LC, JOURNAL OF APPLIED PHYSICS, 103, 124513 , (2008)

Large impurity effects in rubrene crystals: First-principles calculations. Tsetseris, L; Pantelides, ST, PHYSICAL REVIEW B, 78, 115205 , (2008)

Magnetic "Dead" Layer at a Complex Oxide Interface. Luo, WD; Pennycook, SJ; Pantelides, ST, PHYSICAL REVIEW LETTERS, 101, 247204 , (2008)

Materials Applications of Aberration-Corrected Scanning Transmission Electron Microscopy. Pennycook, SJ; Chisholm, MF; Lupini, AR; Varela, M; van Benthem, K; Borisevich, AY; Oxley, MP; Luo, W; Pantelides, ST, ADVANCES IN IMAGING AND ELECTRON PHYSICS, VOL 153, 153, 327-+ , (2008)

Multi-Scale Simulation of Radiation Effects in Electronic Devices. Schrimpf, RD; Warren, KM; Ball, DR; Weller, RA; Reed, RA; Fleetwood, DM; Massengill, LW; Mendenhall, MH; Rashkeev, SN; Pantelides, ST; Alles, MA, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 1891-1902 , (2008)

Point defect configurations of supersaturated Au atoms inside Si nanowires. Oh, SH; van Benthem, K; Molina, SI; Borisevich, AY; Luo, WD; Werner, P; Zakharov, ND; Kurnar, D; Pantelides, ST; Pennycook, SJ, NANO LETTERS, 8, 1016-1019 , (2008)

Post-Irradiation Annealing Mechanisms of Defects Generated in Hydrogenated Bipolar Oxides. Chen, XJ; Barnaby, HJ; Vertneire, B; Holbert, KE; Wright, D; Pease, RL; Schrimpf, RD; Fleetwood, DM; Pantelides, ST; Shaneyfelt, MR; Adell, P, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 3032-3038 , (2008)

Probing the nano-scale with first-principles calculations. Tsetseris, L; Pantelides, ST, MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 152, 109-113 , (2008)

Pulsed infrared laser annealing of gold nanoparticles embedded in a silica matrix. Halabica, A; Idrobo, JC; Pantelides, ST; Magruder, RH; Pennycook, SJ; Haglund, RF, JOURNAL OF APPLIED PHYSICS, 103, 083545 , (2008)

Reactions of water molecules in silica-based network glasses. Batyrev, IG; Tuttle, B; Fleetwood, DM; Schrimpf, RD; Tsetseris, L; Pantelides, ST, PHYSICAL REVIEW LETTERS, 100, 105503 , (2008)

The E ' center and oxygen vacancies in SiO2. Pantelides, ST; Lu, ZY; Nicklaw, C; Bakos, T; Rashkeev, SN; Fleetwood, DM; Schrimpf, RD, JOURNAL OF NON-CRYSTALLINE SOLIDS, 354, 217-223 , (2008)

The Role of Water in the Radiation Response of Wet and Dry Oxides. Batyrev, IG; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 2085-2089 , (2008)

Trapping and release of impurities in TiN: A first-principles study. Tsetseris, L; Kalfagiannis, N; Logothetidis, S; Pantelides, ST, PHYSICAL REVIEW B, 78, 094111 , (2008)

Vacancies, interstitials and their complexes in titanium carbide. Tsetseris, L; Pantelides, ST, ACTA MATERIALIA, 56, 2864-2871 , (2008)

Bonding at the SiC-SiO2 interface and the effects of nitrogen and hydrogen. Wang, SW; Dhar, S; Wang, SR; Ahyi, AC; Franceschetti, A; Williams, JR; Feldman, LC; Pantelides, ST, PHYSICAL REVIEW LETTERS, 98, 026101 , (2007)

Doping-type dependence of damage in silicon diodes exposed to X-ray, proton, and He+ irradiations. Caussanel, M; Canals, A; Dixit, SK; Beck, MJ; Touboul, AD; Schrimpf, RD; Fleetwood, DM; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 1925-1930 , (2007)

Dual nanoparticle/substrate control of catalytic dehydrogenation. Borisevich, AY; Wang, SW; Rashkeev, SN; Glazoff, M; Pennycook, SJ; Pantelides, ST, ADVANCED MATERIALS, 19, 2129-+ , (2007)

Effects of device aging on microelectronics radiation response and reliability. Fleetwood, DM; Rodgers, MP; Tsetseris, L; Zhou, XJ; Batyrev, I; Wang, S; Schrimpf, RD; Pantelides, ST, MICROELECTRONICS RELIABILITY, 47, 1075-1085 , (2007)

Engineering model of a biased metal-molecule metal junction. Caussanel, M; Schrimpf, RD; Tsetseris L; Evans, MH; Pantelides, ST, JOURNAL OF COMPUTER ELECTRONICS, 6, 425-430 , (2007)

First-principles studies of isomerization processes of silicon clusters. Tsetseris, L; Hadjisavvas, G; Pantelides, ST, PHYSICAL REVIEW B, 76, 045330 , (2007)

Formation and evolution of a self-organized hierarchy of Ge nanostructures on Si(111)-(7x7): STM observations and first-principles calculations. Ma, HF; Qin, ZH; Xu, MC; Shi, DX; Gao, HJ; Wang, SW; Pantelides, ST, PHYSICAL REVIEW B, 75, 165403 , (2007)

From 3D imaging of atoms to macroscopic device properties. Pennycook, SJ; van Benthem, K; Oxley, MP; Rashkeev, SN; Pantelides, ST, MICROSCOPY AND MICROANALYSIS, 13, 82-83 , (2007)

Generalized Bloch theorem for complex periodic potentials: A powerful application to quantum transport calculations. Zhang, XG; Varga, K; Pantelides, ST, PHYSICAL REVIEW B, 76, 035108 , (2007)

Hydrogen effects in MOS devices. Tsetseris, L; Fleetwood, DM; Schrimpf, RD; Zhou, XJ; Batyrev, IG; Pantelides, ST, MICROELECTRONIC ENGINEERING, 84, 2344-2349 , (2007)

Hydrogen in MOSFETs - A primary agent of reliability issues. Pantelides, ST; Tsetseris, L; Rashkeev, SN; Zhou, XJ; Fleetwood, DM; Schrimpf, RD, MICROELECTRONICS RELIABILITY, 47, 903-911 , (2007)

Hydrogen shuttling near Hf-defect complexes in Si/SiO2/HfO2 structures. Marinopoulos, AG; Batyrev, I; Zhou, XJ; Schrimpf, RD; Fleetwood, DM; Pantelides, ST, APPLIED PHYSICS LETTERS, 91, 233503 , (2007)

Hydrogen-induced initiation of corrosion in aluminum. Rashkeev, SN; Sohlberg, KW; Zhuo, SP; Pantelides, ST, JOURNAL OF PHYSICAL CHEMISTRY C, 111, 7175-7178 , (2007)

Hydrogen-related instabilities in MOS devices under bias temperature stress. Tsetseris, L; Zhou, XJ; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 7, 502-508 , (2007)

Intercalation of oxygen and water molecules in pentacene crystals: First-principles calculations. Tsetseris, L; Pantelides, ST, PHYSICAL REVIEW B, 75, 153202 , (2007)

Molecular dynamics simulations of stretched gold nanowires: The relative utility of different semiempirical potentials. Pu, Q; Leng, YS; Tsetseris, L; Park, HS; Pantelides, ST; Cummings, PT, JOURNAL OF CHEMICAL PHYSICS, 126, 144707 , (2007)

Orbital-occupancy versus charge ordering and the strength of electron correlations in electron-doped CaMnO3. Luo, W; Franceschetti, A; Varela, M; Tao, J; Pennycook, SJ; Pantelides, ST, PHYSICAL REVIEW LETTERS, 99, 036402 , (2007)

Quantum mechanical description of displacement damage formation. Beck, MJ; Hatcher, R; Schrimpf, RD; Fleetwood, DM; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 1906-1912 , (2007)

Quantum transport in molecules and nanotube devices. Varga, K; Pantelides, ST, PHYSICAL REVIEW LETTERS, 98, 076804 , (2007)

Radiation induced charge trapping in ultrathin HfO2-based MOSFETs. Dixit, SK; Zhou, XJ; Schrimpf, RD; Fleetwood, DM; Pantelide, ST; Choi, R; Bersuker, G; Feldman, LC, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 1883-1890 , (2007)

Role of N defects on thermally induced atomic-scale structural changes in transition-metal nitrides. Tsetseris, L; Kalfagiannis, N; Logothetidis, S; Pantelides, ST, PHYSICAL REVIEW LETTERS, 99, 125503 , (2007)

Role of the nanoscale in catalytic CO oxidation by supported Au and Pt nanostructures. Rashkeev, SN; Lupini, AR; Overbury, SH; Pennycook, SJ; Pantelides, ST, PHYSICAL REVIEW B, 76, 035438 , (2007)

s-electron ferromagnetism on gold and silver nanoclusters. Luo, W; Pennycook, SJ; Pantelides, ST, NANO LETTERS, 7, 3134-3137 , (2007)

Spectroscopic imaging of oxide interfaces with aberration corrected probes. Varela, M; Oxley, MP; Roberts, KG; Garcia-Barriocanal, J; Lupini, AR; Rashkeev, SN; Leon, C; Krishnan, KM; Santamaria, J; Pantelides, ST; Pennycook, SJ, MICROSCOPY AND MICROANALYSIS, 13, 142-143 , (2007)

Stability and dynamics of frenkel pairs in si. Beck, MJ; Tsetseris, L; Pantelides, ST, PHYSICAL REVIEW LETTERS, 99, 215503 , (2007)

Standing friedel waves: A quantum probe of electronic states in nanoscale devices. Lu, JQ; Zhang, XG; Pantelides, ST, PHYSICAL REVIEW LETTERS, 99, 226804 , (2007)

STM observation and first-principles determination of Ge nanoscale structures on Si(111). Qin, ZH; Shi, DX; Ma, HF; Gao, HJ; Rao, AS; Wang, SW; Pantelides, ST, PHYSICAL REVIEW B, 75, 085313 , (2007)

Structure and interaction of point defects in transition-metal nitrides. Tsetseris, L; Kalfagiannis, N; Logothetidis, S; Pantelides, ST, PHYSICAL REVIEW B, 76, 224107 , (2007)

Structure and interaction of point defects in transition-metal nitrides. Tsetseris, L; Kalfagiannis, N; Logothetidis, S; Pantelides, ST, PHYSICAL REVIEW B, 76, 224107 , (2007)

Suppression of interface state generation upon electron injection in nitrided oxides grown on 4H-SiC. Rozen, J; Dhar, S; Pantelides, ST; Feldman, LC; Wang, S; Williams, JR; Afanas'ev, VV, APPLIED PHYSICS LETTERS, 91, 153503 , (2007)

The origin of electron mobility enhancement in strained MOSFETs. Hadjisavvas, G; Tsetseris, L; Pantelides, SI, IEEE ELECTRON DEVICE LETTERS, 28, 1018-1020 , (2007)

Total dose response of ge MOS capacitors with HfO2/Dy2O3 gate stacks. Chen, DK; Schrimpf, RD; Fleetwood, DM; Galloway, KF; Pantelides, ST; Dimoulas, A; Mavrou, G; Sotiropoulos, A; Panayiotatos, Y, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 971-974 , (2007)

Atomic-scale mechanisms for low-NIEL dopant-type dependent damage in Si. Beck, MJ; Tsetseris, L; Caussanel, M; Schrimpf, RD; Fleetwood, DM; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 53, 3621-3628 , (2006)

Effects of switched-bias annealing on charge trapping in HfO2 gate dielectrics. Zhou, XJ; Fleetwood, DM; Tsetseris, L; Schrimpf, RD; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 53, 3636-3643 , (2006)

Effects of water on the aging and radiation response of MOS devices. Batyrev, IG; Rodgers, MP; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 53, 3629-3635 , (2006)

Encapsulation of floating carbon nanotubes in SiO(2). Tsetseris, L; Pantelides, ST, PHYSICAL REVIEW LETTERS, 97, 266805 , (2006)

First-principles theory of tunneling currents in metal-oxide-semiconductor structures. Zhang, XG; Lu, ZY; Pantelides, ST, APPLIED PHYSICS LETTERS, 89, 032112 , (2006)

Lagrange-function approach to real-space order-N electronic-structure calculations. Varga, K; Pantelides, ST, PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 243, 1110-1120 , (2006)

Oxygen migration, agglomeration, and trapping: Key factors for the morphology of the Si-SiO2 interface. Tsetseris, L; Pantelides, ST, PHYSICAL REVIEW LETTERS, 97, 116101 , (2006)

Reactions of excess hydrogen at a Si(111) surface with H termination: First-principles calculations. Tsetseris, L; Pantelides, ST, PHYSICAL REVIEW B, 74, 113301 , (2006)

Selective nontemplated adsorption of organic molecules on nanofacets and the role of bonding patterns. Du, SX; Gao, HJ; Seidel, C; Tsetseris, L; Ji, W; Kopf, H; Chi, LF; Fuchs, H; Pennycook, SJ; Pantelides, ST, PHYSICAL REVIEW LETTERS, 97, 156105 , (2006)

Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs. Pantelides, ST; Wang, S; Franceschetti, A; Buczko, R; Di Ventra, M; Rashkeev, SN; Tsetseris, L; Evans, MH; Batyrev, IG; Feldman, LC; Dhar, S; McDonald, K; Weller, RA; Schrimpf, RD; Fleetwood, DM; Zhou, XJ; Williams, JR; Tin, CC; Chung, GY; Isaacs-Smith, T; Wang, SR; Pennycook, SJ; Duscher, G; Van Benthem, K; Porter, LM, CHALLENGES AND ADVANCES, MATERIALS SCIENCE FORUM: SiC AND RELATED MATERIALS 2005, eds. R.P. Devaty, D.J. Larkin and S.E. Saddow, 527-529, 935-948 , (2006)

Silicon carbide and related materials 2005. Pantelides, ST; Wang, S; Franceschetti, A; Buczko, R; Di Ventra, M; Rashkeev, S; Feldman, LC; Dhar, S; McDonald, K; Weller, RA; Schrimpf, RD; Fleetwood, DM; Zhou, XJ; Williams, JR; Tin, CC; Chung, GY; Isaacs-Smith; Wang, SR; Pennycook, SJ; Duscher, G; Van Benthem, K; Porter, LM, MATERIALS SCIENCE FORUM, 935, , (2006)

Thermal donor formation processes in silicon and the catalytic role of hydrogen. Tsetseris, L; Wang, SW; Pantelides, ST, APPLIED PHYSICS LETTERS, 88, 051916 , (2006)

Total dose radiation response of nitrided and non-nitrided SiO2/4H-SiC MOS capacitors. Dixit, SK; Dhar, S; Rozen, J; Wang, SW; Schrimpf, RD; Fleetwood, DM; Pantelides, ST; Williams, JR; Feldman, LC, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 53, 3687-3692 , (2006)

Tunable spin hall effect by Stern-Gerlach diffraction. Lu, JQ; Zhang, XG; Pantelides, ST, PHYSICAL REVIEW B, 74, 245319 , (2006)

Atomic-scale mechanisms of selective adsorption and dimerization of pentacene on Si surfaces. Tsetseris, L; Pantelides, ST, APPLIED PHYSICS LETTERS, 87, 233109 , (2005)

Bonding configurations and collective patterns of Ge atoms adsorbed on Si(111)-(7 x 7). Wang, YL; Gao, HJ; Guo, HM; Wang, S; Pantelides, ST, PHYSICAL REVIEW LETTERS, 94, 106101 , (2005)

Charging of molecules during transport. Gohda, Y; Pantelides, ST, NANO LETTERS, 5, 1217-1220 , (2005)

Common origin for enhanced low-dose-rate sensitivity and bias temperature instability under negative bias. Tsetseris, L; Schrimpf, RD; Fleetwood, DM; Pease, RL; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 52, 2265-2271 , (2005)

Electronic and mechanical properties of planar and tubular boron structures. Evans, MH; Joannopoulos, JD; Pantelides, ST, PHYSICAL REVIEW B, 72, 045434 , (2005)

Enhanced current transport at grain boundaries in high-T-c superconductors. Klie, RF; Buban, JP; Varela, M; Franceschetti, A; Jooss, C; Zhu, Y; Browning, ND; Pantelides, ST; Pennycook, SJ, NATURE, 435, 475-478 , (2005)

First-principles mobility calculations and atomic-scale interface roughness in nanoscale structures. Evans, MH; Zhang, XG; Joannopoulos, JD; Pantelides, ST, PHYSICAL REVIEW LETTERS, 95, 106802 , (2005)

Hydrogenation/deuteration of the Si-SiO2 interface: Atomic-scale mechanisms and limitations. Tsetseris, L; Pantelides, ST, APPLIED PHYSICS LETTERS, 86, 112107 , (2005)

Interface passivation for silicon dioxide layers on silicon carbide. Dhar, S; Wang, SR; Williams, JR; Pantelides, ST; Feldman, LC, MRS BULLETIN, 30, 288-292 , (2005)

Physical mechanisms of negative-bias temperature instability. Tsetseris, L; Zhou, XJ; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, APPLIED PHYSICS LETTERS, 86, 142103 , (2005)

Single Hf atoms inside the ultrathin SiO2 interlayer between a HfO2 dielectric film and the Si substrate: How do they modify the interface?. Rashkeev, SN; van Benthem, K; Pantelides, ST; Pennycook, SJ, MICROELECTRONIC ENGINEERING, 80, 416-419 , (2005)

Spin-dependent resonant tunneling through quantum-well states in magnetic metallic thin films. Lu, ZY; Zhang, XG; Pantelides, ST, PHYSICAL REVIEW LETTERS, 94, 207210 , (2005)

The effects of aging on MOS irradiation and annealing response. Rodgers, MP; Fleetwood, DM; Schrimpf, RD; Batyrev, IG; Wang, S; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 52, 2642-2648 , (2005)

"Lagrange functions": A family of powerful basis sets for real-space order-N electronic structure calculations. Varga, K; Zhang, ZY; Pantelides, ST, PHYSICAL REVIEW LETTERS, 93, 176403 , (2004)

Critical layer thickness in Stranski-Krastanow growth of Ge on Si(001). Varga, K; Wang, LG; Pantelides, ST; Zhang, ZY, SURFACE SCIENCE, 562, L225-L230 , (2004)

Dopants adsorbed as single atoms prevent degradation of catalysts. Wang, SW; Borisevich, AY; Rashkeev, SN; Glazoff, MV; Sohlberg, K; Pennycook, SJ; Pantelides, ST, NATURE MATERIALS, 3, 143-146 , (2004)

Dual role of fluorine at the Si-SiO2 interface. Tsetseris, L; Zhou, XJ; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, APPLIED PHYSICS LETTERS, 85, 4950-4952 , (2004)

Effects of hydrogen motion on interface trap formation and annealing. Rashkeev, SN; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 51, 3158-3165 , (2004)

Hole-enhanced reactions of water at the Si-SiO2 interface. Tsetseris, L; Zhou, XJ; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, MATERIALS RESEARCH SOCIETY PROCEEDINGS, 786, 171 , (2004)

Hydrogen at the Si/SiO2 Interface: From Atomic-Scale Calculations to Engineering Models. Rashkeev, SN; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, INTERNATIONAL JOURNAL OF HIGH SPEED ELECTRONICS AND SYSTEMS, 14, 575-580 , (2004)

Interface structure and non-stoichiometry in HfO2 dielectrics. Baik, HS; Kim, M; Park, GS; Song, SA; Varela, M; Franceschetti, A; Pantelides, ST; Pennycook, SJ, APPLIED PHYSICS LETTERS, 85, 672-674 , (2004)

Migration, incorporation, and passivation reactions of molecular hydrogen at the Si-SiO2 interface. Tsetseris, L; Pantelides, ST, PHYSICAL REVIEW B, 70, 245320 , (2004)

Negative bias-temperature instabilities in metal-oxide-silicon devices with SiO2 and SiOxNy/HfO2 gate dielectrics. Zhou, XJ; Tsetseris, L; Rashkeev, SN; Fleetwood, DM; Schrimpf, RD; Pantelides, ST; Felix, JA; Gusev, EP; D'Emic, C, APPLIED PHYSICS LETTERS, 84, 4394-4396 , (2004)

Optically active defects in SiO2: The nonbridging oxygen center and the interstitial OH molecule. Bakos, T; Rashkeev, SN; Pantelides, ST, PHYSICAL REVIEW B, 70, 075203 , (2004)

Origin of anomalous Pt-Pt distances in the Pt/alumina catalytic system. Sohlberg, K; Rashkeev, S; Borisevich, AY; Pennycook, SJ; Pantelides, ST, CHEMPHYSCHEM, 5, 1893-1897 , (2004)

Aberration-corrected scanning transmission electron microscopy: the potential for nano- and interface science. Pennycook, SJ; Lupini, AR; Kadavanich, A; McBride, JR; Rosenthal, SJ; Puetter, RC; Yahil, A; Krivanek, OL; Dellby, N; Nellist, PDL; Duscher, G; Wang, LG; Pantelides, ST, ZEITSCHRIFT FUR METALLKUNDE, 94, 350-357 , (2003)

Band offsets measured by internal photoemission-induced second-harmonic generation. Marka, Z; Pasternak, R; Rashkeev, SN; Jiang, Y; Pantelides, ST; Tolk, NH; Roy, PK; Kozub, J, PHYSICAL REVIEW B, 67, 045302 , (2003)

Characterization and modeling of the nitrogen passivation of interface traps in SiO2/4H-SiC. McDonald, K; Weller, RA; Pantelides, ST; Feldman, LC; Chung, GY; Tin, CC; Williams, JR, JOURNAL OF APPLIED PHYSICS, 93, 2719-2722 , (2003)

Contactless ultra-fast laser probing of radiation-induced leakage current in ultra-thin oxides. Pasternak, R; Chatterjee, A; Shirokaya, YV; Choi, BK; Marka, Z; Miller, JK; Albridge, RG; Rashkeev, SN; Pantelides, ST; Schrimpf, RD; Fleetwood, DM; Tolk, NH, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 50, 1929-1933 , (2003)

Electronic transport in molecular devices from first principles. Di Ventra, M; Lang, ND; Pantelides, ST, MOLECULES AS COMPONENTS OF ELECTRONIC DEVICES, 844, 219-229 , (2003)

Excited-state relaxations and Franck-Condon shift in Si quantum dots. Franceschetti, A; Pantelides, ST, PHYSICAL REVIEW B, 68, 033313 , (2003)

Laser detection of radiation enhanced electron transport in ultra-thin oxides. Pasternak, R; Shirokaya, YV; Marka, Z; Miller, JK; Rashkeev, SN; Pantelides, ST; Tolk, NH; Choi, BK; Schrimpf, RD; Fleetwood, DM, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 514, 150-155 , (2003)

Nucleation of single-walled carbon nanotubes. Fan, X; Buczko, R; Puretzky, AA; Geohegan, DB; Howe, JY; Pantelides, ST; Pennycook, SJ, PHYSICAL REVIEW LETTERS, 90, 145501 , (2003)

Oxygen chemisorption on Au nanoparticles. Franceschetti, A; Pennycook, SJ; Pantelides, ST, CHEMICAL PHYSICS LETTERS, 374, 471-475 , (2003)

Phase transformation mechanism between gamma- and theta-alumina. Cai, SH; Rashkeev, SN; Pantelides, ST; Sohlberg, K, PHYSICAL REVIEW B, 67, 224104 , (2003)

Radiation-induced acceptor deactivation in bipolar devices: Effects of electric field. Rashkeev, SN; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, APPLIED PHYSICS LETTERS, 83, 4646-4648 , (2003)

Role of electronic versus atomic relaxations in Stokes shifts at defects in solids. Bakos, T; Rashkeev, SN; Pantelides, ST, PHYSICAL REVIEW LETTERS, 91, 226402 , (2003)

Statistical modeling of radiation-induced proton transport in silicon: Deactivation of dopant acceptors in bipolar devices. Rashkeev, SN; Fleetwood, DA; Schrimpf, RD; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 50, 1896-1900 , (2003)

Structure, properties, and dynamics of oxygen vacancies in amorphous SiO2. Lu, ZY; Nicklaw, CJ; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, PHYSICAL REVIEW LETTERS, 91, 039901 , (2003)

Transition metal atoms on different alumina phases: The role of subsurface sites on catalytic activity. Rashkeev, SN; Sohlberg, K; Glazoff, MV; Novak, J; Pennycook, SJ; Pantelides, ST, PHYSICAL REVIEW B, 67, 115414 , (2003)

Two-color optical technique for characterization of x-ray radiation-enhanced electron transport in SiO2. Marka, Z; Pasternak, R; Albridge, RG; Rashkeev, SN; Pantelides, ST; Tolk, NH; Choi, BK; Fleetwood, DM; Schrimpf, RD, JOURNAL OF APPLIED PHYSICS, 93, 1865-1870 , (2003)

Detection of trap activation by ionizing radiation in SiO2 by spatially localized cathodoluminescence spectroscopy

. White, BD; Brillson, LJ; Bataiev, M; Brillson, LJ; Fleetwood, DM; Schrimpf, RD; Choi, BK, Pantelides, ST, JOURNAL OF APPLIED PHYSICS, 92, 5729-5734 , (2002)

Atomic scale mechanism of the transformation of gamma-alumina to theta-alumina. Cai, SH; Rashkeev, SN; Pantelides, ST; Sohlberg, K, PHYSICAL REVIEW LETTERS, 89, 235501 , (2002)

Characterization of 1.8-MeV proton-irradiated AlGaN/GaN field-effect transistor structures by nanoscale depth-resolved luminescence spectroscopy. White, BD; Bataiev, M; Brillson, LJ; Choi, BK; Fleetwood, DM; Schrimpf, RD; Pantelides, ST; Dettmer, RW; Schaff, WJ; Champlain, JG; Mishra, UK, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 49, 2695-2701 , (2002)

Characterization of charge-carrier dynamics in thin oxide layers on silicon by second harmonic generation. Glinka, YD; Wang, W; Singh, SK; Marka, Z; Rashkeev, SN; Shirokaya, Y; Albridge, R; Pantelides, ST; Tolk, NH; Lucovsky, G, PHYSICAL REVIEW B, 65, 193103 , (2002)

Current-induced forces in molecular wires. Di Ventra, M; Pantelides, ST; Lang, ND, PHYSICAL REVIEW LETTERS, 88, 046801 , (2002)

Defect transition energies and the density of electronic states in hydrogenated amorphous silicon. Mensing, G; Gilligan, J; Hari, P; Hurt, E; Lupke, G; Pantelides, S; Tolk, N; Taylor, PC, JOURNAL OF NON-CRYSTALLINE SOLIDS, 299, 621-625 , (2002)

Diffusion mechanism of hydrogen in amorphous silicon: Ab initio molecular dynamics simulation. Su, YS; Pantelides, ST, PHYSICAL REVIEW LETTERS, 88, 165503 , (2002)

Dual behavior of H+ at Si-SiO2 interfaces: Mobility versus trapping. Rashkeev, SN; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, APPLIED PHYSICS LETTERS, 81, 1839-1841 , (2002)

Electronic transport in single molecules. Di Ventra, M; Lang, ND; Pantelides, ST, CHEMICAL PHYSICS, 281, 189-198 , (2002)

First-principles simulations of molecular electronics. Pantelides, ST; Di Ventra, M; Lang, ND, MOLECULAR ELECTRONICS II, 960, 177-183 , (2002)

Island shape selection in Pt(111) submonolayer homoepitaxy with or without CO as an adsorbate. Wu, J; Wang, EG; Varga, K; Liu, BG; Pantelides, ST; Zhang, ZY, PHYSICAL REVIEW LETTERS, 89, 146103 , (2002)

Molecular electronics by the numbers. Pantelides, ST; Di Ventra, M; Lang, ND; Rashkeev, SN, IEEE TRANSACTIONS ON NANOTECHNOLOGY, 1, 86-90 , (2002)

Passivation of the 4H-SiC/SiO2 interface with nitric oxide. Williams, JR; Chung, GY; Tin, CC; McDonald, K; Farmer, D; Chanana, RK; Weller, RA; Pantelides, ST; Holland, OW; Das, MK; Feldman, LC, SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3, 967-972 , (2002)

Physical model for enhanced interface-trap formation at low dose rates. Rashkeev, SN; Cirba, CR; Fleetwood, DM; Schrimpf, RD; Witczak, SC; Michez, A; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 49, 2650-2655 , (2002)

Reactions and diffusion of water and oxygen molecules in amorphous SiO2. Bakos, T; Rashkeev, SN; Pantelides, ST, PHYSICAL REVIEW LETTERS, 88, 055508 , (2002)

Structure, properties, and dynamics of oxygen vacancies in amorphous SiO2. Lu, ZY; Nicklaw, CJ; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, PHYSICAL REVIEW LETTERS, 89, 285505 , (2002)

The origin of photoluminescence lines in irradiated amorphous SiO2. Bakos, T; Rashkeev, SN; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 49, 2713-2717 , (2002)

The role of the nanoscale in surface reactions: CO2 on CdSe. Wang, LG; Pennycook, SJ; Pantelides, ST, PHYSICAL REVIEW LETTERS, 89, 075506 , (2002)

The strcuture, properties, and dynamics of oxygen vacancies in amorphous SiO2. Nicklaw, CJ; Lu, ZY; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 49, 2667-2673 , (2002)

Transport in molecular transistors: Symmetry effects and nonlinearities. Rashkeev, SN; Di Ventra, M; Pantelides, ST, PHYSICAL REVIEW B, 66, 033301 , (2002)

Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices. Fleetwood, DM; Xiong, HD; Lu, ZY; Nicklaw, CJ; Felix, JA; Schrimpf, RD; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 49, 2674-2683 , (2002)

Atomic-scale dynamics of the formation and dissolution of carbon clusters in SiO2. Wang, SW; Di Ventra, M; Kim, SG; Pantelides, ST, PHYSICAL REVIEW LETTERS, 86, 5946-5949 , (2001)

Control of doping by impurity chemical potentials: Predictions for p-type ZnO. Yan, YF; Zhang, SB; Pantelides, ST, PHYSICAL REVIEW LETTERS, 86, 5723-5726 , (2001)

Core-hole effects on energy-loss near-edge structure. Duscher, G; Buczko, R; Pennycook, SJ; Pantelides, ST, ULTRAMICROSCOPY, 86, 355-362 , (2001)

Defect generation by hydrogen at the Si-SiO2 interface. Rashkeev, SN; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, PHYSICAL REVIEW LETTERS, 8716, 165506 , (2001)

Hydrogen passivation and activation of oxygen complexes in silicon. Rashkeev, SN; Di Ventra, M; Pantelides, ST, APPLIED PHYSICS LETTERS, 78, 1571-1573 , (2001)

Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide. Chung, GY; Tin, CC; Williams, JR; McDonald, K; Chanana, RK; Weller, RA; Pantelides, ST; Feldman, LC; Holland, OW; Das, MK; Palmour, JW, IEEE ELECTRON DEVICE LETTERS, 22, 176-178 , (2001)

Interactions of hydrogen with CeO2. Sohlberg, K; Pantelides, ST; Pennycook, SJ, JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 123, 6609-6611 , (2001)

Interface state density and channel mobility for 4H-SiC MOSFETs with nitrogen passivation. Chung, GY; Williams, JR; Tin, CC; McDonald, K; Farmer, D; Chanana, RK; Pantelides, ST; Holland, OW; Feldman, LC, APPLIED SURFACE SCIENCE, 184, 399-403 , (2001)

Molecular electronics by the numbers. Pantelides, ST; Di Ventra, M; Lang, ND, PHYSICA B, 296, 72-77 , (2001)

Nonstoichiometry and the electrical activity of grain boundaries in SrTiO3. Kim, M; Duscher, G; Browning, ND; Sohlberg, K; Pantelides, ST; Pennycook, SJ, PHYSICAL REVIEW LETTERS, 86, 4056-4059 , (2001)

Proton-induced defect generation at the Si-SiO2 interface. Rashkeev, SN; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 48, 2086-2092 , (2001)

Surface reconstruction and the difference in surface acidity between gamma- and eta-alumina. Sohlberg, K; Pantelides, ST; Pennycook, SJ, JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 123, 26-29 , (2001)

Temperature effects on the transport properties of molecules. Di Ventra, M; Kim, SG; Pantelides, ST; Lang, ND, PHYSICAL REVIEW LETTERS, 86, 288-291 , (2001)


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