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Fleetwood, Daniel M.
Olin H. Landreth Professor of Engineering
Professor and Chair of Electrical Engineering
Professor of Physics

Research Information

Interests include:

  • Effects of ionizing radiation on microelectronic devices & materials. 
  • Origin(s) of 1/f noise in semiconductors, semiconductor devices, and metals.
  • Thermally stimulated current methods to profile defects in insulators.
  • Radiation hardness assurance test methods.
  • Charge trapping in silicon dioxide, and interface-trap generation.
  • Radiation effects modeling and simulation.
  • Novel microelectronic materials, including silicon-on-insulator materials.
  • Electronics for high-radiation and high-temperature environments.
  • Advanced microelectronic processing/characterization, including ultrathin oxides & alternative dielectrics.



Selected Publications

1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions. Roy, T; Puzyrev, YS; Zhang, EX; DasGupta, S; Francis, SA; Fleetwood, DM; Schrimpf, RD; Mishra, UK; Speck, JS; Pantelides, ST, MICROELECTRONICS RELIABILITY, 51, 212-216 , (2011)

Atomic-scale origins of bias-temperature instabilities in SiC-SiO2 structures. Shen, XA; Zhang, EX; Zhang, CX; Fleetwood, DM; Schrimpf, RD; Dhar, S; Ryu, SH; Pantelides, ST, APPLIED PHYSICS LETTERS, 98, 063507 , (2011)

Dehydrogenation of defects and hot-electron degradation in GaN high-electron-mobility transistors. Puzyrev, YS; Roy, T; Beck, M; Tuttle, BR; Schrimpf, RD; Fleetwood, DM; Pantelides, ST, JOURNAL OF APPLIED PHYSICS, 109, 034501 , (2011)

Defect Interactions of H-2 in SiO2: Implications for ELDRS and Latent Interface Trap Buildup. Tuttle, BR; Hughart, DR; Schrimpf, RD; Fleetwood, DM; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 57, 3046-3053 , (2010)

Dose Enhancement and Reduction in SiO2 and High-kappa MOS Insulators. Dasgupta, A; Fleetwood, DM; Reed, RA; Weller, RA; Mendenhall, MH; Sierawski, BD, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 57, 3463-3469 , (2010)

Effects of fin width on memory windows in FinFET ZRAMs. Zhang, EX; Fleetwood, DM; Alles, ML; Schrimpf, RD; Mamouni, FE; Xiong, W; Cristoloveanu, S, SOLID-STATE ELECTRONICS, 54, 1155-1159 , (2010)

Effects of Halo Doping and Si Capping Layer Thickness on Total-Dose Effects in Ge p-MOSFETs. Arora, R; Simoen, E; Zhang, EX; Fleetwood, DM; Schrimpf, RD; Galloway, KF; Choi, BK; Mitard, J; Meuris, M; Claeys, C; Madan, A; Cressler, JD, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 57, 1933-1939 , (2010)

Effects of Processing and Radiation Bias on Leakage Currents in Ge pMOSFETs. Zhang, CX; Zhang, EX; Fleetwood, DM; Schrimpf, RD; Galloway, KF; Simoen, E; Mitard, J; Claeys, C, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 57, 3066-3070 , (2010)

Effects of Total Dose Irradiation on the Gate-Voltage Dependence of the 1/f Noise of nMOS and pMOS Transistors. Francis, SA; Dasgupta, A; Fleetwood, DM, IEEE TRANSACTIONS ON ELECTRON DEVICES, 57, 503-510 , (2010)

Electrical-stress-induced degradation in AlGaN/GaN high electron mobility transistors grown under gallium-rich, nitrogen-rich, and ammonia-rich conditions. Roy, T; Puzyrev, YS; Tuttle, BR; Fleetwood, DM; Schrimpf, RD; Brown, DF; Mishra, UK; Pantelides, ST, APPLIED PHYSICS LETTERS, 96, 133503 , (2010)

Enhanced room temperature oxidation in silicon and porous silicon under 10 keV x-ray irradiation. Ryckman, JD; Reed, RA; Weller, RA; Fleetwood, DM; Weiss, SM, JOURNAL OF APPLIED PHYSICS, 108, 113528 , (2010)

Hydrogen-dopant interactions in SiGe and strained Si. Tsetseris, L; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, APPLIED PHYSICS LETTERS, 96, 251905 , (2010)

Including the Effects of Process-Related Variability on Radiation Response in Advanced Foundry Process Design Kits. Li, YF; Rezzak, N; Zhang, EX; Schrimpf, RD; Fleetwood, DM; Wang, JQ; Wang, DL; Wu, YJ; Cai, SA, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 57, 3570-3574 , (2010)

Layout-Related Stress Effects on Radiation-Induced Leakage Current. Rezzak, N; Schrimpf, RD; Alles, ML; Zhang, EX; Fleetwood, DM; Li, YA, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 57, 3288-3292 , (2010)

Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling. Pantelides, ST; Tsetseris, L; Beck, MJ; Rashkeev, SN; Hadjisavvas, G; Batyrev, IG; Tuttle, BR; Marinopoulos, AG; Zhou, XJ; Fleetwood, DM; Schrimpf, RD, SOLID-STATE ELECTRONICS, 54, 841-848 , (2010)

Process Dependence of Proton-Induced Degradation in GaN HEMTs. Roy, T; Zhang, EX; Puzyrev, YS; Fleetwood, DM; Schrimpf, RD; Choi, BK; Hmelo, AB; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 57, 3060-3065 , (2010)

Recoverable degradation in InAs/AlSb high-electron mobility transistors: The role of hot carriers and metastable defects in AlSb. Shen, X; DasGupta, S; Reed, RA; Schrimpf, RD; Fleetwood, DM; Pantelides, ST, JOURNAL OF APPLIED PHYSICS, 108, 114505 , (2010)

Response of a 0.25 mu m thin-film silicon-on-sapphire CMOS technology to total ionizing dose. King, MP; Gong, D; Liu, C; Liu, T; Xiang, AC; Ye, J; Schrimpf, RD; Reed, RA; Alles, ML; Fleetwood, DM, JOURNAL OF INSTRUMENTATION, 5, C11021 , (2010)

Theory of hot-carrier-induced phenomena in GaN high-electron-mobility transistors. Puzyrev, YS; Tuttle, BR; Schrimpf, RD; Fleetwood, DM; Pantelides, ST, APPLIED PHYSICS LETTERS, 96, 053505 , (2010)

Total Dose Effects on the Performance of Irradiated Capacitorless MSDRAM Cells. El-Mamouni, F; Bawedin, M; Zhang, EX; Schrimpf, RD; Fleetwood, DM; Cristoloveanu, S, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 57, 3054-3059 , (2010)

Total Ionizing Dose Effects on FinFET-Based Capacitor-Less 1T-DRAMs. Zhang, EX; Fleetwood, DM; El-Mamouni, F; Alles, ML; Schrimpf, RD; Xiong, WZ; Hobbs, C; Akarvardar, K; Cristoloveanu, S, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 57, 3298-3304 , (2010)

Charge Trapping Properties of 3C-and 4H-SiC MOS Capacitors With Nitrided Gate Oxides. Arora, R; Rozen, J; Fleetwood, DM; Galloway, KF; Zhang, CX; Han, JS; Dimitrijev, S; Kong, F; Feldman, LC; Pantelides, ST; Schrimpf, RD, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56, 3185-3191 , (2009)

ELDRS in Bipolar Linear Circuits: A Review. Pease, RL; Schrimpf, RD; Fleetwood, DM, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56, 1894-1908 , (2009)

Fin-Width Dependence of Ionizing Radiation-Induced Subthreshold-Swing Degradation in 100-nm-Gate-Length FinFETs. El Mamouni, F; Zhang, EX; Schrimpf, RD; Fleetwood, DM; Reed, RA; Cristoloveanu, S; Xiong, WZ, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56, 3250-3255 , (2009)

Impact of Proton Irradiation-Induced Bulk Defects on Gate-Lag in GaN HEMTs. Kalavagunta, A; Silvestri, M; Beck, MJ; Dixit, SK; Schrimpf, RD; Reed, RA; Fleetwood, DM; Shen, L; Mishra, UK, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56, 3192-3195 , (2009)

Temperature Stress Response of Germanium MOS Capacitors with HfO2/HfSiON Gate Dielectric. Arora, R; Fleetwood, DM; Schrimpf, RD; Galloway, KF; Schmidt, BW; Rogers, BR; Chung KB; Lucovsky, G, ECS Transactions, 19, 803-814 , (2009)

The Effects of Aging and Hydrogen on the Radiation Response of Gated Lateral PNP Bipolar Transistors. Hughart, DR; Schrimpf, RD; Fleetwood, DM; Chen, XJ; Barnaby, HJ; Holbert, KE; Pease, RL; Platteter, DG; Tuttle, BR; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56, 3361-3366 , (2009)

The Role of Atomic Displacements in Ion-Induced Dielectric Breakdown. Beck, MJ; Puzyrev, YS; Sergueev, N; Varga, K; Schrimpf, RD; Fleetwood, DM; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56, 3210-3217 , (2009)

The Role of Irradiation Bias on the Time-Dependent Dielectric Breakdown of 130-nm MOSFETs Exposed to X-rays. Silvestri, M; Gerardin, S; Schrimpf, RD; Fleetwood, DM; Faccio, F; Paccagnella, A, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56, 3244-3249 , (2009)

Atomic Displacement Effects in Single-Event Gate Rupture. Beck, MJ; Tuttle, BR; Schrimpf, RD; Fleetwood, DM; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 3025-3031 , (2008)

Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection. Black, JD; Ball, DR; Robinson, WH; Fleetwood, DM; Schrimpf, RD; Reed, RA; Black, DA; Warren, KM; Tipton, AD; Dodd, PE; Haddad, NF; Xapsos, MA; Kim, HS; Friendlich, M, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 2943-2947 , (2008)

Disorder-recrystallization effects in low-energy beam-solid interactions. Beck, MJ; Schrimpf, RD; Fleetwood, DM; Pantelides, ST, PHYSICAL REVIEW LETTERS, 100, 185502 , (2008)

Effects of Hydrogen on the Radiation Response of Bipolar Transistors: Experiment and Modeling. Batyrev, IG; Hughart, D; Durand, R; Bounasser, M; Tuttle, BR; Fleetwood, DM; Schrimpf, RD; Rashkeev, SN; Dunham, GW; Law, ME; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 3039-3045 , (2008)

Effects of Moisture and Hydrogen Exposure on Radiation-Induced MOS Device Degradation and Its Implications for Long-Term Aging. Schwank, JR; Shaneyfelt, MR; Dasgupta, A; Francis, SA; Zhou, XJ; Fleetwood, DM; Schrimpf, RD; Pantelides, ST; Felix, JA; Dodd, PE; Ferlet-Cavrois, V; Paillet, P; Dalton, SM; Swanson, SE; Hash, GL; Thornberg, SM; Hochrein, JM; Lum, GK, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 3206-3215 , (2008)

Electron Capture, Hydrogen Release, and Enhanced Gain Degradation in Linear Bipolar Devices. Fleetwood, DM; Schrimpf, RD; Pantelides, ST; Pease, RL; Dunham, GW, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 2986-2991 , (2008)

Electrostatic Mechanisms Responsible for Device Degradation in Proton Irradiated AlGaN/AIN/GaN HEMTs. Kalavagunta, A; Touboul, A; Shen, L; Schrimpf, RD; Reed, RA; Fleetwood, DM; Jain, RK; Mishra, UK, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 2106-2112 , (2008)

Multi-Scale Simulation of Radiation Effects in Electronic Devices. Schrimpf, RD; Warren, KM; Ball, DR; Weller, RA; Reed, RA; Fleetwood, DM; Massengill, LW; Mendenhall, MH; Rashkeev, SN; Pantelides, ST; Alles, MA, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 1891-1902 , (2008)

Post-Irradiation Annealing Mechanisms of Defects Generated in Hydrogenated Bipolar Oxides. Chen, XJ; Barnaby, HJ; Vertneire, B; Holbert, KE; Wright, D; Pease, RL; Schrimpf, RD; Fleetwood, DM; Pantelides, ST; Shaneyfelt, MR; Adell, P, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 3032-3038 , (2008)

Radiation Effects in MOS Oxides. Schwank, JR; Shaneyfelt, MR; Fleetwood, DM; Felix, JA; Dodd, PE; Paillet, P; Ferlet-Cavrois, V, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 1833-1853 , (2008)

Radiation Effects on the 1/f Noise of Field-Oxide Field Effect Transistors. Zhou, XJ; Fleetwood, DM; Schrimpf, RD; Faccio, F; Gonella, L, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 2975-2980 , (2008)

Reactions of water molecules in silica-based network glasses. Batyrev, IG; Tuttle, B; Fleetwood, DM; Schrimpf, RD; Tsetseris, L; Pantelides, ST, PHYSICAL REVIEW LETTERS, 100, 105503 , (2008)

Temperature-dependent second- and third-order optical nonlinear susceptibilities at the Si/SiO2 interface. Lu, X; Pasternak, R; Park, H; Qi, JB; Tolk, NH; Chatterjee, A; Schrimpf, RD; Fleetwood, DM, PHYSICAL REVIEW B, 78, 155311 , (2008)

The E ' center and oxygen vacancies in SiO2. Pantelides, ST; Lu, ZY; Nicklaw, C; Bakos, T; Rashkeev, SN; Fleetwood, DM; Schrimpf, RD, JOURNAL OF NON-CRYSTALLINE SOLIDS, 354, 217-223 , (2008)

The Role of Water in the Radiation Response of Wet and Dry Oxides. Batyrev, IG; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 2085-2089 , (2008)

Total ionizing dose effects in shallow trench isolation oxides. Faccio, F; Barnaby, HJ; Chen, XJ; Fleetwood, DM; Gonella, L; McLain, M; Schrimpf, RD, MICROELECTRONICS RELIABILITY, 48, 1000-1007 , (2008)

Total Ionizing Dose Effects on Strained HfO2-Based nMOSFETs. Park, HW; Dixit, SK; Choi, YS; Schrimpf, RD; Fleetwood, DM; Nishida, T; Thompson, SE, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55, 2981-2985 , (2008)

Doping-type dependence of damage in silicon diodes exposed to X-ray, proton, and He+ irradiations. Caussanel, M; Canals, A; Dixit, SK; Beck, MJ; Touboul, AD; Schrimpf, RD; Fleetwood, DM; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 1925-1930 , (2007)

Effects of aging on the 1/f noise of metal-oxide-semiconductor field effect transistors. Zhou, XJ; Fleetwood, DM; Danciu, I; Dasgupta, A; Francis, SA; Touboul, AD, APPLIED PHYSICS LETTERS, 91, 173501 , (2007)

Effects of device aging on microelectronics radiation response and reliability. Fleetwood, DM; Rodgers, MP; Tsetseris, L; Zhou, XJ; Batyrev, I; Wang, S; Schrimpf, RD; Pantelides, ST, MICROELECTRONICS RELIABILITY, 47, 1075-1085 , (2007)

Evidence of radiation-induced dopant neutralization in partially-depleted SOINMOSFETs. Akarvardar, K; Schrimpf, RD; Fleetwood, DM; Cristoloveanu, S; Gentil, P; Blalock, BJ, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 1920-1924 , (2007)

Hydrogen effects in MOS devices. Tsetseris, L; Fleetwood, DM; Schrimpf, RD; Zhou, XJ; Batyrev, IG; Pantelides, ST, MICROELECTRONIC ENGINEERING, 84, 2344-2349 , (2007)

Hydrogen in MOSFETs - A primary agent of reliability issues. Pantelides, ST; Tsetseris, L; Rashkeev, SN; Zhou, XJ; Fleetwood, DM; Schrimpf, RD, MICROELECTRONICS RELIABILITY, 47, 903-911 , (2007)

Hydrogen shuttling near Hf-defect complexes in Si/SiO2/HfO2 structures. Marinopoulos, AG; Batyrev, I; Zhou, XJ; Schrimpf, RD; Fleetwood, DM; Pantelides, ST, APPLIED PHYSICS LETTERS, 91, 233503 , (2007)

Hydrogen-related instabilities in MOS devices under bias temperature stress. Tsetseris, L; Zhou, XJ; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 7, 502-508 , (2007)

Oxide interface studies using second harmonic generation. Tolk, NH; Alles, ML; Pasternak, R; Lu, X; Schrimpf, RD; Fleetwood, DM; Dolan, RP; Standley, RW, MICROELECTRONIC ENGINEERING, 84, 2089-2092 , (2007)

Quantum mechanical description of displacement damage formation. Beck, MJ; Hatcher, R; Schrimpf, RD; Fleetwood, DM; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 1906-1912 , (2007)

Radiation induced charge trapping in ultrathin HfO2-based MOSFETs. Dixit, SK; Zhou, XJ; Schrimpf, RD; Fleetwood, DM; Pantelide, ST; Choi, R; Bersuker, G; Feldman, LC, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 1883-1890 , (2007)

Random telegraph signals in n-type ZnO nanowire field effect transistors at low temperature. Xiong, HD; Wang, WY; Li, QL; Richter, CA; Suehle, JS; Hong, WK; Lee, T; Fleetwood, DM, APPLIED PHYSICS LETTERS, 91, 053107 , (2007)

Second harmonic generation for noninvasive metrology of silicon-on-insulator wafers. Alles, ML; Pasternak, R; Lu, X; Tolk, NH; Schrimpf, RD; Fleetwood, DM; Dolan, RP; Standley, RW, IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 20, 107-113 , (2007)

The application of RHBD to n-MOSFETs intended for use in cryogenic-temperature radiation environments. Jun, B; Sutton, AK; Diestelhorst, RM; Duperon, GJ; Cressler, JD; Black, JD; Haeffner, T; Reed, RA; Alles, ML; Schrimpf, RD; Fleetwood, DM; Marshall, PW, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 2100-2105 , (2007)

The effects of proton and x-ray irradiation on the DC and AC performance of complementary (npn+pnp) SiGeHBTs on thick-film SOI. Bellini, M; Jun, B; Sutton, AK; Appaswamy, AC; Cheng, P; Cressler, JD; Marshall, PW; Schrimpf, RD; Fleetwood, DM; El-Kareh, B; Balster, S; Steinmann, P; Yasuda, H, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 2245-2250 , (2007)

The effects of X-ray and proton irradiation on a 200 GHz/90 GHz complementary (npn+pnp) SiGe : C HBT technology. Diestelhorst, RM; Finn, S; Jun, B; Sutton, AK; Cheng, P; Marshall, PW; Cressler, JD; Schrimpf, RD; Fleetwood, DM; Gustat, H; Heinemann, B; Fischer, GG; Knoll, D; Tillack, B, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 2190-2195 , (2007)

The radiation tolerance of strained Si/SiGe n-MODFETs. Madan, A; Jun, B; Diestelhorst, RM; Appaswamy, A; Cressler, JD; Schrimpf, RD; Fleetwood, DM; Marshall, PW; Isaacs-Smith, T; Williams, JR; Koester, SJ, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 2251-2256 , (2007)

Total dose and bias temperature stress effects for HfSiON on Si MOS capacitors. Chen, DK; Mamouni, EE; Zhou, XJ; Schrimpf, RD; Fleetwood, DM; Galloway, KF; Lee, S; Seo, H; Lucovsky, G; Jun, B; Cressler, JD, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 1931-1937 , (2007)

Total dose response of ge MOS capacitors with HfO2/Dy2O3 gate stacks. Chen, DK; Schrimpf, RD; Fleetwood, DM; Galloway, KF; Pantelides, ST; Dimoulas, A; Mavrou, G; Sotiropoulos, A; Panayiotatos, Y, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 971-974 , (2007)

Total ionizing dose hardness assurance issues for high dose rate environments. Schwank, JR; Sexton, FW; Shaneyfelt, MR; Fleetwood, DM, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 1042-1048 , (2007)

Understanding radiation- and hot carrier-induced damage processes in SiGeHBTs using mixed-mode electrical stress. Cheng, P; Jun, B; Sutton, A; Appaswamy, A; Zhu, CD; Cressler, JD; Schrimpf, RD; Fleetwood, DM, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 54, 1938-1945 , (2007)

Temperature-dependence of off-state drain leakage in x-ray irradiated 130 nm CMOS devices

. Jun, BG; Diestelhorst, RM; Bellini, M; Espinel, G; Appaswamy, A; Prakash, APG; Cressley, JD; Chen, DK; Schrimpf, RD; Fleetwood, DM; Turowski, M; Raman, A, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 53, 3203-3209 , (2006)

An investigation of dose rate and source dependent effects in 200 GHz SiGe HBTs. Shutton, AK; Prakash, APG; Jun, BG; Zhao, EH; Bellini, M; Pellish, J; Diestelhorst, RM; Carts, MA; Phan, A; Ladbury, R; Cressley, JD; Marshall, PW; Marshall, CJ; Reed, RA; Schrimpf, RD; Fleetwood, DM, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 53, 3166-3174 , (2006)

Atomic-scale mechanisms for low-NIEL dopant-type dependent damage in Si. Beck, MJ; Tsetseris, L; Caussanel, M; Schrimpf, RD; Fleetwood, DM; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 53, 3621-3628 , (2006)

Differences between charge trapping states in irradiated nano-crystalline HfO2 and non-crystalline Hf silicates. Lucovsky, G; Fleetwood, DM; Lee, S; Seo, H; Schrimpf, RD; Felix, JA; Luning, J; Fleming, LB; Ulrich, M; Aspnes, DE, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 53, 3644-3648 , (2006)

Effects of switched-bias annealing on charge trapping in HfO2 gate dielectrics. Zhou, XJ; Fleetwood, DM; Tsetseris, L; Schrimpf, RD; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 53, 3636-3643 , (2006)

Effects of water on the aging and radiation response of MOS devices. Batyrev, IG; Rodgers, MP; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 53, 3629-3635 , (2006)

Modeling total-dose effects for a low-dropout voltage regulator. Ramachandran, V; Narasimham, B; Fleetwood, DM; Schrimpf, RD; Homan, WT; Witulski, AE; Pease, RL; Dunham, GW; Seiler, JE; Platteter, DG, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 53, 3223-3231 , (2006)

Nature of interface defect buildup in gated bipolar devices under low rate irradiation. Chen, XJ; Barnaby, HJ; Schrimpf, RD; Fleetwood, DM; Pease, RL; Platteter, DG; Dunham, GW, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 53, 3649-3654 , (2006)

Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs. Pantelides, ST; Wang, S; Franceschetti, A; Buczko, R; Di Ventra, M; Rashkeev, SN; Tsetseris, L; Evans, MH; Batyrev, IG; Feldman, LC; Dhar, S; McDonald, K; Weller, RA; Schrimpf, RD; Fleetwood, DM; Zhou, XJ; Williams, JR; Tin, CC; Chung, GY; Isaacs-Smith, T; Wang, SR; Pennycook, SJ; Duscher, G; Van Benthem, K; Porter, LM, CHALLENGES AND ADVANCES, MATERIALS SCIENCE FORUM: SiC AND RELATED MATERIALS 2005, eds. R.P. Devaty, D.J. Larkin and S.E. Saddow, 527-529, 935-948 , (2006)

Silicon carbide and related materials 2005. Pantelides, ST; Wang, S; Franceschetti, A; Buczko, R; Di Ventra, M; Rashkeev, S; Feldman, LC; Dhar, S; McDonald, K; Weller, RA; Schrimpf, RD; Fleetwood, DM; Zhou, XJ; Williams, JR; Tin, CC; Chung, GY; Isaacs-Smith; Wang, SR; Pennycook, SJ; Duscher, G; Van Benthem, K; Porter, LM, MATERIALS SCIENCE FORUM, 935, , (2006)

Studies of charge carrier trapping and recombination processes in Si/SiO2/MgO structures using second-harmonic generation. White, YV; Lu, X; Pasternak, R; Tolk, NH; Chatterjee, A; Schrimpf, RD; Fleetwood, DM; Ueda, A; Mu, R, APPLIED PHYSICS LETTERS, 88, 062102 , (2006)

Total dose radiation response of nitrided and non-nitrided SiO2/4H-SiC MOS capacitors. Dixit, SK; Dhar, S; Rozen, J; Wang, SW; Schrimpf, RD; Fleetwood, DM; Pantelides, ST; Williams, JR; Feldman, LC, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 53, 3687-3692 , (2006)

X-ray irradiation and bias effects in fully-depleted and partially-depleted SiGeHBTs fabricated on CMOs-compatible SOI. Bellini, M; Jun, BB; Chen, TB; Cressler, JD; Marshall, PW; Chen, DK; Schrimpf, RD; Fleetwood, DM; Cai, J, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 53, 3182-3186 , (2006)

Bias-temperature instabilities and radiation effects in MOS devices. Zhou, XJ; Fleetwood, DM; Felix, JA; Gusev, EP, D'Emic, C, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 52, 2231-2238 , (2005)

Common origin for enhanced low-dose-rate sensitivity and bias temperature instability under negative bias. Tsetseris, L; Schrimpf, RD; Fleetwood, DM; Pease, RL; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 52, 2265-2271 , (2005)

Physical mechanisms of negative-bias temperature instability. Tsetseris, L; Zhou, XJ; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, APPLIED PHYSICS LETTERS, 86, 142103 , (2005)

Proton-induced damage in gallium nitride-based Schottky diodes. Karmarkar, AP; White, BD; Buttari, D; Fleetwood, DM; Schrimpf, RD; Weller, RA; Brillson, LJ; Mishra, UK, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 52, 2239-2244 , (2005)

The effects of aging on MOS irradiation and annealing response. Rodgers, MP; Fleetwood, DM; Schrimpf, RD; Batyrev, IG; Wang, S; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 52, 2642-2648 , (2005)

The impact of mechanical stress on the total-dose response of linear bipolar transistors with various passivation layers. Cizmarik, RR; Schrimpf, RD; Fleetwood, DM; Galloway, KF; Platteter, DG; Shaneyfelt, MR; Pease, RL; Boch, J; Ball, DR; Rowe, JD; Maher, MC, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 52, 1513-1517 , (2005)

2004 IEEE Nuclear and Space Radiation Effects Conference comments by the General Chairman. Fleetwood, D, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 51, 3126-3127 , (2004)

A screened Coulomb scattering module for displacement damage computations in Geant4. Weller, RA; Mendenhall, MH; Fleetwood, DM, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 51, 3669-3678 , (2004)

Annealing behavior of linear bipolar devices with enhanced low-dose-rate sensitivity. Shaneyfelt, MR; Schwankm JR; Fleetwood, DM, Pease, RL; Felix, JA; Dodd, PE; Maher, MC, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 51, 3172-3177 , (2004)

Characterization of multiple Si/SiO2 interfaces in silicon-on-insulator materials via second-harmonic generation. Jun, B; White, YV; Schrimpf, RD; Fleetwood, DM; Brunier, F; Bresson, N; Cristoloveanu, S; Tolk, NH, APPLIED PHYSICS LETTERS, 85, 3095-3097 , (2004)

Charge trapping and low frequency noise in SOI buried oxides. Xiong, HD; Jun, B; Fleetwood, DM; Schrimpf, RD; Schwank, JR, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 51, 3238-3242 , (2004)

Charge trapping in irradiated SOI wafers measured by second harmonic generation. Jun, B; Schrimpf, RD; Fleetwood, DA; White, YV; Pasternak, R; Rashkeev, SN; Brunier, F; Bresson, N; Fouillat, M; Cristoloveanu, S; Tolk, NH, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 51, 3231-3237 , (2004)

CVD diamond photoconductive devices. Choi, BK; Kang, WP; Davidson, JL; Howell, M; Schrimpf, RD; Fleetwood, DM, DIAMOND AND RELATED MATERIALS, 13, 785-790 , (2004)

Dual role of fluorine at the Si-SiO2 interface. Tsetseris, L; Zhou, XJ; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, APPLIED PHYSICS LETTERS, 85, 4950-4952 , (2004)

Effect of switching from high to low dose rate on linear bipolar technology radiation response. Boch, J; Saigne, F; Schrimpf, RD; Fleetwood, DM; Ducret, S; Dusseau, L; David, JP; Fesquet, J; Gasiot, J; Ecoffet, R, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 51, 2896-2902 , (2004)

Effect of thermal annealing on radiation-induced degradation of bipolar technologies when the dose rate is switched from high to low. Ducret, S; Saigne, F; Boch, J; Schrimpf, RD; Fleetwood, DA; Vaille, JR; Dusseau, L; David, JP; Ecoffet, R, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 51, 3219-3224 , (2004)

Effects of hydrogen motion on interface trap formation and annealing. Rashkeev, SN; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 51, 3158-3165 , (2004)

Effects of radiation and charge trapping on the reliability of high-kappa gate dielectrics. Felix, JA; Schwank, JR; Fleetwood, DM; Shaneyfelt, MR; Gusev, EP, MICROELECTRONICS RELIABILITY, 44, 563-575 , (2004)

Elevated temperature irradiation at high dose rate of commercial linear bipolar ICs. Boch, J; Saigne, R; Schrimpf, RD; Fleetwood, DM; Cizmarik, R; Zander, D, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 51, 2903-2907 , (2004)

Generation of metastable electron traps in the near interfacial region of SOI buried oxides by ion implantation and their effect on device properties. Schwank, JR; Fleetwood, DM; Xiong, HD; Shaneyfelt, MR; Draper, BL, MICROELECTRONIC ENGINEERING, 72, 362-366 , (2004)

Hole-enhanced reactions of water at the Si-SiO2 interface. Tsetseris, L; Zhou, XJ; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, MATERIALS RESEARCH SOCIETY PROCEEDINGS, 786, 171 , (2004)

Hydrogen at the Si/SiO2 Interface: From Atomic-Scale Calculations to Engineering Models. Rashkeev, SN; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, INTERNATIONAL JOURNAL OF HIGH SPEED ELECTRONICS AND SYSTEMS, 14, 575-580 , (2004)

Influence of total-dose radiation on the electrical characteristics of SOI MOSFETs. Felix, JA; Schwank, JR; Cirba, CR; Schrimpf, RD; Shaneyfelt, MR; Fleetwood, DM; Dodd, PE, MICROELECTRONIC ENGINEERING, 72, 332-341 , (2004)

Interface trapping properties of nMOSFETs with Al2O3/SiOxNy/Si(100) gate dielectric stacks after exposure to ionizing radiation. Felix, JA; Xiong, HD; Fleetwood, DM; Gusev, EP; Schrimpf, RD; Sternberg, AL; D'Emic, C, MICROELECTRONIC ENGINEERING, 72, 50-54 , (2004)

Low-frequency noise and radiation response of buried oxides in SOI nMOS transistors. Xiong, HD; Fleetwood, DM; Schwank, JR, IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, 151, 118-124 , (2004)

Negative bias-temperature instabilities in metal-oxide-silicon devices with SiO2 and SiOxNy/HfO2 gate dielectrics. Zhou, XJ; Tsetseris, L; Rashkeev, SN; Fleetwood, DM; Schrimpf, RD; Pantelides, ST; Felix, JA; Gusev, EP; D'Emic, C, APPLIED PHYSICS LETTERS, 84, 4394-4396 , (2004)

Proton irradiation effects on GaN-based high electron-mobility transistors with Si-doped AlxGa1-xN and thick GaN cap layers. Kannarkar, AP; Jun, BG; Fleetwood, DA; Schrimpf, RD; Weller, RA; White, BD; Brillson, LJ; Mishra, UK, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 51, 3801-3806 , (2004)

The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors. Hu, XW; Choi, BK; Barnaby, HJ; Fleetwood, DM; Schrimpf, RD; Lee, SC; Shojah-Ardalan, S; Wilkins, R; Mishra, UK; Dettmer, RW, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 51, 293-297 , (2004)

Total dose effects on bipolar integrated circuits: Characterization of the saturation region. Boch, J; Saigne, F; Ducret, S; Schrimpf, RD; Fleetwood, DM; Iacconi, P; Dusseau, L, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 51, 3225-3230 , (2004)

Total dose effects on double gate fully depleted SOI MOSFETs. Jun, BG; Xiong, HD; Sternberg, AL; Cirba, CR; Chen, DK; Schrimpf, RD; Fleetwood, DM; Schwank, JR; Cristoloveanu, S, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 51, 3767-3772 , (2004)

Using surface charge analysis to characterize the radiation response of Si/SiO2 structures. Stacey, JW; Schrimpf, RD; Fleetwood, DM; Holmes, KC, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 51, 3686-3691 , (2004)

A model of radiation effects in nitride-oxide films for power MOSFET applications. Raparla, VAK; Lee, SC; Schrimpf, RD; Fleetwood, DM; Galloway, KF, SOLID-STATE ELECTRONICS, 47, 775-783 , (2003)

Charge separation techniques for irradiated pseudo-MOS SOI transistors. Jun, B; Fleetwood, DM; Schrimpf, RD; Zhou, X; Montes, EJ; Cristoloveanu, S, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 50, 1891-1895 , (2003)

Contactless ultra-fast laser probing of radiation-induced leakage current in ultra-thin oxides. Pasternak, R; Chatterjee, A; Shirokaya, YV; Choi, BK; Marka, Z; Miller, JK; Albridge, RG; Rashkeev, SN; Pantelides, ST; Schrimpf, RD; Fleetwood, DM; Tolk, NH, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 50, 1929-1933 , (2003)

Electrical, spectral, and chemical properties of 1.8 MeV proton irradiated AlGaN/GaN HEMT structures as a function of proton fluence. White, BD; Bataiev, M; Goss, SH; Hu, X; Karmarkar, A; Fleetwood, DM; Schrimpf, RD; Schaff, WJ; Brillson, LJ, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 50, 1934-1941 , (2003)

Evaluating average and atypical response in radiation effects simulations. Weller, RA; Sternberg, AL; Massengill, LW; Schrimpf, RD; Fleetwood, DM, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 50, 2265-2271 , (2003)

Impact of mechanical stress on total-dose effects in bipolar ICs. Boch, J; Fleetwood, DM; Schrimpf, RD; Cizmarik, RR; Saigne, F, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 50, 2335-2340 , (2003)

Laser detection of radiation enhanced electron transport in ultra-thin oxides. Pasternak, R; Shirokaya, YV; Marka, Z; Miller, JK; Rashkeev, SN; Pantelides, ST; Tolk, NH; Choi, BK; Schrimpf, RD; Fleetwood, DM, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 514, 150-155 , (2003)

Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors. Hu, XW; Karmarkar, AP; Jun, B; Fleetwood, DM; Schrimpf, RD; Geil, RD; Weller, RA; White, BD; Bataiev, M; Brillson, LJ; Mishra, UK, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 50, 1791-1796 , (2003)

Radiation-induced acceptor deactivation in bipolar devices: Effects of electric field. Rashkeev, SN; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, APPLIED PHYSICS LETTERS, 83, 4646-4648 , (2003)

Radiation-induced charge trapping in thin Al2O3/SiOxNy/Si(100) gate dielectric stacks. Felix, JA; Shaneyfelt, MR; Fleetwood, DM; Meisenheimer, TL; Schwank, JR; Schrimpf, RD, Dodd, PE; Guzev, EP, D'Emic, C, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 50, 1910-1918 , (2003)

Spin/carrier dynamics at semiconductor interfaces using intense, tunable, ultra-fast lasers. Jiang, Y; Pasternak, R; Marka, Z; Shirokaya, YV; Miller, JK; Rashkeev, SN; Glinka, YD; Perakis, IE; Roy, PK; Kozub, J; Choi, BK; Fleetwood, DM; Schrimpf, RD; Liu, X; Sasaki, Y; Furdyna, JK; Tolk, NH, PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 240, 490-499 , (2003)

Statistical modeling of radiation-induced proton transport in silicon: Deactivation of dopant acceptors in bipolar devices. Rashkeev, SN; Fleetwood, DA; Schrimpf, RD; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 50, 1896-1900 , (2003)

Structure, properties, and dynamics of oxygen vacancies in amorphous SiO2. Lu, ZY; Nicklaw, CJ; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, PHYSICAL REVIEW LETTERS, 91, 039901 , (2003)

Total-dose radiation hardness assurance. Fleetwood, DM; Eisen, HA, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 50, 552-564 , (2003)

Two-color optical technique for characterization of x-ray radiation-enhanced electron transport in SiO2. Marka, Z; Pasternak, R; Albridge, RG; Rashkeev, SN; Pantelides, ST; Tolk, NH; Choi, BK; Fleetwood, DM; Schrimpf, RD, JOURNAL OF APPLIED PHYSICS, 93, 1865-1870 , (2003)

Detection of trap activation by ionizing radiation in SiO2 by spatially localized cathodoluminescence spectroscopy

. White, BD; Brillson, LJ; Bataiev, M; Brillson, LJ; Fleetwood, DM; Schrimpf, RD; Choi, BK, Pantelides, ST, JOURNAL OF APPLIED PHYSICS, 92, 5729-5734 , (2002)

Analytical model for proton radiation effects in bipolar devices. Barnaby, HJ; Smith, SK; Schrimpf, RD; Fleetwood, DM; Pease, RL, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 49, 2643-2649 , (2002)

Characterization of 1.8-MeV proton-irradiated AlGaN/GaN field-effect transistor structures by nanoscale depth-resolved luminescence spectroscopy. White, BD; Bataiev, M; Brillson, LJ; Choi, BK; Fleetwood, DM; Schrimpf, RD; Pantelides, ST; Dettmer, RW; Schaff, WJ; Champlain, JG; Mishra, UK, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 49, 2695-2701 , (2002)

Dual behavior of H+ at Si-SiO2 interfaces: Mobility versus trapping. Rashkeev, SN; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, APPLIED PHYSICS LETTERS, 81, 1839-1841 , (2002)

Effects of hydrogen transport and reactions on microelectronics radiation response and reliability. Fleetwood, DM, MICROELECTRONICS RELIABILITY, 42, 523-541 , (2002)

Hydrogen-related reliability issues for advanced microelectronics. Fleetwood, DM, MICROELECTRONICS RELIABILITY, 42, 1397-1403 , (2002)

Impact of passivation layers on enhanced low-dose-rate sensitivity and pre-irradiation elevated-temperature stress effects in bipolar linear ICs. Shaneyfelt, MR; Pease, RL; Schwank, JR; Maher, MC; Hash, GL; Fleetwood, DM; Dodd, PE; Reber, CA; Witczak, SC; Riewe, LC; Hjalmarson, HP; Banks, JC; Doyle, BL; Knapp, JA, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 49, 3171-3179 , (2002)

Long-term reliability degradation of ultrathin dielectric films due to heavy-ion irradiation. Choi, BK; Fleetwood, DM; Schrimpf, RD; Massengill, LW; Galloway, KF; Shaneyfelt, MR; Meisenheimer, TL; Dodd, PE; Schwank, JR; Lee, YM; John, RS; Lucovsky, G, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 49, 3045-3050 , (2002)

Physical model for enhanced interface-trap formation at low dose rates. Rashkeev, SN; Cirba, CR; Fleetwood, DM; Schrimpf, RD; Witczak, SC; Michez, A; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 49, 2650-2655 , (2002)

Proton-induced degradation in AlGaAs/GaAs heterojunction bipolar transistors. Hu, XW; Choi, BK; Barnaby, HJ; Fleetwood, DM; Schrimpf, RD; Galloway, KF; Weller, RA; McDonald, K; Mishra, UK; Dettmer, RW, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 49, 3213-3216 , (2002)

Reliability degradation of ultra-thin oxynitride and Al2O3 gate dielectric films owing to heavy-ion irradiation. Choi, BK; Fleetwood, DM; Massengill, LW; Schrimpf, RD; Galloway, KF; Shaneyfelt, MR; Meisenheimer, TL; Dodd, PE; Schwank, JR; Lee, YM; Johnson, RS; Lucovsky, G, ELECTRONICS LETTERS, 38, 157-158 , (2002)

Structure, properties, and dynamics of oxygen vacancies in amorphous SiO2. Lu, ZY; Nicklaw, CJ; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, PHYSICAL REVIEW LETTERS, 89, 285505 , (2002)

Temperature dependence and irradiation response of 1/f-noise in MOSFETs. Xiong, HD; Fleetwood, DM; Choi, BK; Sternberg, AL, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 49, 2718-2723 , (2002)

The strcuture, properties, and dynamics of oxygen vacancies in amorphous SiO2. Nicklaw, CJ; Lu, ZY; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 49, 2667-2673 , (2002)

Total-dose radiation response of hafnium-silicate capacitors. Felix, JA; Fleetwood, DM; Schrimpf, RD; Hong, JG; Lucovsky, G; Schwank, JR; Shaneyfelt, MR, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 49, 3191-3196 , (2002)

Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices. Fleetwood, DM; Xiong, HD; Lu, ZY; Nicklaw, CJ; Felix, JA; Schrimpf, RD; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 49, 2674-2683 , (2002)

Aging and baking effects on the radiation hardness of MOS capacitors. Karmarkar, AP; Choi, BK; Schrimpf, RD; Fleetwood, DM, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 48, 2158-2163 , (2001)

Bias and frequency dependence of radiation-induced charge trapping in MOS devices. Felix, JA; Fleetwood, DM; Riewe, LC; Shaneyfelt, MR; Winokur, PS, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 48, 2114-2120 , (2001)

Defect generation by hydrogen at the Si-SiO2 interface. Rashkeev, SN; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, PHYSICAL REVIEW LETTERS, 8716, 165506 , (2001)

Heavy-ion-induced breakdown in ultra-thin gate oxides and high-k dielectrics. Massengill, LW; Choi, BK; Fleetwood, DM; Schrimpf, RD; Galloway, KF; Shaneyfelt, MR; Meisenheimer, TL; Dodd, PE; Schwank, JR; Lee, YM; Johnson, RS; Lucovsky, G, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 48, 1904-1912 , (2001)

Proton-induced defect generation at the Si-SiO2 interface. Rashkeev, SN; Fleetwood, DM; Schrimpf, RD; Pantelides, ST, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 48, 2086-2092 , (2001)

Silicon-on-insulator non-volatile field-effect transistor memory. Schwank, JR; Shaneyfelt, MR; Meisenheimer, TL; Draper, BL; Vanhesden, K; Fleetwood, DM, MICROELECTRONIC ENGINEERING, 59, 253-258 , (2001)


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