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REU

October 24, 2001

FRONTIERS IN MATERIALS SCIENCE
VINSE COLLOQUIUM SERIES

Dr. Mark Law
Co-Director, SWAMP Center, Co-Director of the Nanoscience and Technology Institute
University of Florida
"Shallow Junction Technology: Defects in Silicon"

Abstract. As silicon transistor dimensions shrink, contact junctions need to be made shallower while maintaining low sheet resistance.  It doesn't appear that traditional anneal scaling will get us to the limit. Laser processing as an option will be discussed, but can still be limited by the damage remaining from the implant.  Damage in silicon will be treated, and a model for evolution of defect structures will be presented.  Future modeling needs will be surveyed as devices shrink to 10nm.

 
 
Vanderbilt University