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January 18, 2006


Dr. Patrick Hoffman
Head of Nanostructuring Research Group
Ecole Polytechnique Federale de Lausanne, Switzerland
"Nanostructuring technologies - physical and chemical aspects"

Abstract. Nano-technology, today’s top buzz-word, includes a large variety of very different topics and themes such as chemistry, physics, biology, materials sciences, electrical engineering and others. We are focusing on two- and three-dimensional structuring technologies for applications such as nano-optics for fluorescence correlation spectroscopy, mask repair for microelectronics, surface wettability studies and switchable surface potentials. In this talk, I will compare the advantages and disadvantages of several nanostructuring technologies —electron-beam lithography (EBL) and focused ion and electron beams (FIB and FEB) — for fabrication of structures with dimensions below 500 nm in a large variety of materials.  Electron beam lithography (EBL) using resist is industrially well established for semiconductor mask production processes, and can be applied to nanostructuring other materials with suitable adaptations.  Serial, resistless direct writing tools, such as the FIB, make use of local etching or deposition of materials, but are generally several orders of magnitude slower than EBL processes. Recently we have studied focused electron beam-induced deposition processes. The influences of such physical and chemical parameters (e.g., speed, geometry, structure and chemical composition of deposits) on the deposition process were investigated in detail. We have worked out a deposition model that includes most of the parameters determining the deposition rate.

Vanderbilt University