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Facilities:

Silicon Integration Laboratory
Lab Director: Professor Bridget Rogers (615) 343-3269
Lab Contact: Dr. Bob Geil r.geil@vanderbilt.edu or (615) 343-6721, 6200 Stevenson Center

Four new tools have been installed in the VINSE laboratory for depositing and etching metals, semiconductors, and insulators. This lab is also equipped with acid and solvent fume hoods.

Tools handle 8 inch wafers down to small pieces.
Touchscreen interface for fingertip control of all process parameters.

Instruments

PECVD SystemReactive Ion Etch - Chlorine-basedReactive Ion Etch - Fluorine Based
PECVD SystemReactive Ion Etch - Chlorine-basedReactive Ion Etch - Fluorine Based

Trion Orion II (Learn more)
Plasma enhanced chemical vapor deposition reactor for depositing:

  • Silicon dioxide
  • Silicon nitride
  • Amorphous silicon

Process gases include 10% SiH4 + He, NH3, N2O, O2, and N2


Trion Minilock II (Learn more)
Chlorine based chemistry for reactive ion etching:

  • Aluminum
  • Aluminum oxide
  • Silicon
  • Any material requiring chlorine chemistry

Process gases include Cl2, BCI3, CF4, O2, N2


Trion Phantom II (Learn more)
Fluorine based chemistry for reactive ion etching:

  • Oxides
  • Nitrides
  • Silicon
  • Polyimide
  • Any materials requiring fluorine chemistry

Process gases include CF4, CHF3, SF6, O2


Sputter Deposition  
Sputter Deposition  

Trion Minilock 3 (Learn more)

Sputter and reactive sputter deposition of most materials. This system is currently equipped for sputter depositing:

  • Aluminum
  • Aluminum oxide
  • Aluminum nitride

Process gases include Ar, O2, and N2


  
 
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